MT40A512M16JY-083E vs K4A4G165WG-BCWE Comparison

Detailed side-by-side comparison of MT40A512M16JY-083E by Micron Technology and K4A4G165WG-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16JY-083E MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E ✓ Active
Samsung Electronics
K4A4G165WG-BCWE K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4A4G165WG-BCWE ✓ Active

Specification Comparison

Parameter MT40A512M16JY-083E K4A4G165WG-BCWE
Brand Micron Technology Samsung Electronics
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.85 $16.90
Memory Type DDR4 SDRAM (Automotive) DDR4 SDRAM (volatile DRAM)
Density 8 Gbit —
Organization 512M x 16 —
Clock Frequency 1.2 GHz (tCK = 0.83 ns) [DATA_NEEDED: clock frequency / tCK range]
Data Rate 2400 MT/s (speed grade -083E) 3200 Mbps
VDD Supply Voltage 1.2 V +/- 60 mV —
VDDQ Supply Voltage 1.2 V +/- 60 mV —
VPP Supply Voltage 2.5 V, -125 mV, +250 mV —
I/O Interface 1.2 V pseudo open-drain —
VREFDQ On-die internal adjustable generation —
Refresh Structure 8192-cycle refresh —
Refresh Window 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C —
Package 96-FBGA (8 x 14 mm) FBGA-96
Mounting Type Surface Mount Surface Mount
ECCN EAR99 —
Halogen Free Compliant —
Country of Origin China —
Memory Size — 4 Gbit
Memory Organization — 256M x 16
Interface — Parallel
Access Time — 19 ns
Supply Voltage — 1.2 V
Operating Temperature — 0C to +85C
Memory Format — DRAM
Technology — DDR4
Product Status — Active
RoHS Status — Compliant (per JLCPCB listing)
CAS Latency — [DATA_NEEDED: CAS latency]
Refresh Rate — [DATA_NEEDED: refresh interval]

Datasheets & Resources

Browse All Products Create BOM Request Quote