MT40A512M16LY-075 vs H5AN8G6NDJR-XNC Comparison

Detailed side-by-side comparison of MT40A512M16LY-075 by Micron Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16LY-075

MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 βœ“ Active
SK hynix
H5AN8G6NDJR-XNC H5AN8G6NDJR-XNC - 8Gb DDR4-3200 x16 DRAM | SK Hynix

H5AN8G6NDJR-XNC - 8Gb DDR4-3200 x16 DRAM | SK Hynix

H5AN8G6NDJR-XNC βœ“ Active

Specification Comparison

Parameter MT40A512M16LY-075 H5AN8G6NDJR-XNC
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $55.68
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit β€”
Organization 512M x 16 β€”
Clock Speed 1.33 GHz β€”
Data Rate DDR4-2666 3200 Mbps
Supply Voltage (VDD/VDDQ) 1.2V Β±60mV β€”
VPP Supply 2.5V (-125mV, +250mV) β€”
I/O Type 1.2V pseudo open-drain β€”
Internal Banks (x16) 8 (2 groups of 4 banks) β€”
Refresh Time at TC -40Β°C to 85Β°C 64ms β€”
Refresh Time at TC >85Β°C to 95Β°C 32ms β€”
Refresh Time at TC >95Β°C to 105Β°C 16ms β€”
Package 96-FBGA (7.5x13.5 mm) FBGA-96 (13x7.5 mm)
Operating Temperature Range 0Β°C to +95Β°C β€”
Mounting Type Surface Mount β€”
Memory Size β€” 8 Gb
Memory Organization β€” 512M x16
Supply Voltage (VDD) β€” 1.2 V (max 1.26 V)
Number of Terminals β€” 96
Maximum Operating Temperature β€” 85 Β°C
Input/Output Type β€” COMMON
RoHS β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes
Auto Self-Refresh β€” Yes
Auto Precharge β€” Yes
Data Mask β€” Yes
Dynamic On-Chip Termination β€” Yes
ZQ Calibration β€” Yes
CRC Function β€” Yes
Write Leveling β€” Yes
Asynchronous Reset β€” Yes

Datasheets & Resources

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