MT40A512M16LY-075 vs NT5AD512M16C4-JR Comparison
Detailed side-by-side comparison of MT40A512M16LY-075 by Micron Technology and NT5AD512M16C4-JR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-075
MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16LY-075 β ActiveNanya Technology
NT5AD512M16C4-JR
NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
NT5AD512M16C4-JR β ActiveSpecification Comparison
| Parameter | MT40A512M16LY-075 | NT5AD512M16C4-JR |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $73.75 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x16 |
| Clock Speed | 1.33 GHz | β |
| Data Rate | DDR4-2666 | 1.6 GHz (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| I/O Type | 1.2V pseudo open-drain | β |
| Internal Banks (x16) | 8 (2 groups of 4 banks) | β |
| Refresh Time at TC -40Β°C to 85Β°C | 64ms | β |
| Refresh Time at TC >85Β°C to 95Β°C | 32ms | β |
| Refresh Time at TC >95Β°C to 105Β°C | 16ms | β |
| Package | 96-FBGA (7.5x13.5 mm) | TFBGA-96 |
| Operating Temperature Range | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| Mounting Type | Surface Mount | β |
| Supply Voltage (VDD) | β | 1.2 V |
| Standby Current | β | 0.023 A (max) |
| Number of Terminals | β | 96 |
| Auto Self-Refresh | β | Yes |
| Built-in Temperature Sensor | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| RoHS | β | Compliant |