NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
MPN: NT5AD512M16C4-JR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $94.74 | $94.74 |
| 10 | $89.5 | $895.00 |
| 100 | $84.25 | $8,425.00 |
| 500 | $79 | $39,500.00 |
| 1,000 | $73.75 | $73,750.00 |
Drop-in alternatives for NT5AD512M16C4-JR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
NT5AD512M16C4-HR
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →MT40A512M16TB-062E:R
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View Datasheet →K4A8G165WB-BCTD
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View Datasheet →H5AN8G6NCJR-xxC
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View Datasheet →K4A8G165WB-BCRC
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View Datasheet →NT5AD512M16C4-JR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Organization | 512M x16 |
| Density | 8 Gbit |
| Supply Voltage (VDD) | 1.2 V |
| Data Rate | 1.6 GHz (DDR4-3200) |
| Package | TFBGA-96 |
| Operating Temperature Range | 0°C to +95°C |
| Standby Current | 0.023 A (max) |
| Number of Terminals | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
NT5AD512M16C4-JR Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | VPP — Wordline driver power (2.5V) |
| Pin E2 | DQS_t — Data strobe (true) |
| Pin E3 | DQS_c — Data strobe (complement) |
| Pin F1 | VDD — Power supply |
| Pin F2 | DM — Data mask |
| Pin F3 | VSS — Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
NT5AD512M16C4-JR is suitable for 6 applications: Networking Equipment, Industrial Automation, Smart IoT Devices, Consumer Electronics, Edge Computing, Automotive Infotainment.
Networking Equipment
The NT5AD512M16C4-JR provides high-density, high-speed memory for routers, switches, and firewalls. Its 8Gb capacity and DDR4-3200 data rate support large routing tables and fast packet processing. The low 1.2V operation reduces power in always-on network devices. With features like CRC and write leveling, it ensures reliable data transfer in high-speed backplanes. The TFBGA-96 package fits compact line card designs. For a 16-port switch, this memory can buffer and forward packets at line rate, improving throughput and reducing latency.
Recommended
Industrial Automation
In industrial controllers and PLCs, the NT5AD512M16C4-JR offers reliable memory for real-time control algorithms and data logging. Its 0°C to +95°C temperature range suits factory environments. The built-in temperature sensor and auto self-refresh maintain data integrity during power fluctuations. The 8Gb density allows storing extensive process data. With a 1.2V supply, it integrates well with low-power industrial SoCs. For a robotic arm controller, this memory can store trajectory data and sensor readings, enabling precise motion control.
Recommended
Smart IoT Devices
For smart home hubs and edge gateways, the NT5AD512M16C4-JR provides ample memory for running local AI models and managing multiple sensor streams. Its low power consumption is critical for battery-backed devices. The compact TFBGA-96 package enables small form factors. Features like auto precharge and data mask optimize memory efficiency. The 8Gb capacity supports complex applications like video analytics. In a smart speaker, this memory can buffer audio streams and process voice commands locally, reducing cloud dependency.
Recommended
Consumer Electronics
In set-top boxes and smart TVs, the NT5AD512M16C4-JR delivers high bandwidth for 4K video decoding and smooth UI rendering. Its DDR4-3200 speed ensures fast data access for multimedia applications. The 1.2V operation reduces heat in compact consumer enclosures. With 8Gb capacity, it can hold multiple app instances and video buffers. The CRC function enhances data integrity for streaming content. For a 4K TV, this memory supports high-resolution graphics and quick channel switching.
Recommended
Edge Computing
The NT5AD512M16C4-JR is ideal for edge servers and AI accelerators that require large memory capacity and high bandwidth. Its 8Gb density supports running multiple virtual machines or containerized applications. The low latency of DDR4-3200 enables fast inference for machine learning models. The built-in temperature sensor helps manage thermal throttling in dense edge deployments. With features like write leveling and DTC, it maintains signal integrity in high-speed traces. For an edge gateway processing sensor data, this memory can handle real-time analytics and local decision-making.
Recommended
Automotive Infotainment
In automotive infotainment systems, the NT5AD512M16C4-JR provides reliable memory for navigation, media playback, and driver assistance displays. Its 0°C to +95°C range covers cabin environments. The low power consumption is beneficial for vehicle battery life. The 8Gb capacity supports complex UI and map data. Features like auto self-refresh ensure data retention during ignition cycles. For a head unit, this memory can store navigation maps and run multiple apps simultaneously, enhancing the user experience.
Recommended
Recommended Products Summary
Engineering reference data for NT5AD512M16C4-JR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | NT5AD512M16C4-HR | MT40A512M16TB-062E:R | K4A8G165WB-BCTD | H5AN8G6NCJR-xxC |
|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x16 | 512M x16 | 512M x16 | 512M x16 | 512M x16 |
| Data Rate | DDR4-3200 | DDR4-3200 | DDR4-3200 | DDR4-3200 | DDR4-3200 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Temperature Range | 0°C to +95°C | [DATA_NEEDED] | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Standby Current | 0.023 A (max) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Cost-effective 8Gb DDR4-3200 solution (vs MT40A512M16TB-062E:R)
- Built-in temperature sensor (vs K4A8G165WB-BCTD)
- CRC function for data integrity (vs H5AN8G6NCJR-xxC)
Design Notes
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 25-40 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power input. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.
The NT5AD512M16C4-JR has a maximum operating temperature of +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, monitor the built-in temperature sensor to prevent overheating and implement thermal throttling if necessary.
The device requires a 1.2V VDD and a 2.5V VPP supply. Use low-noise LDOs or DC-DC converters with proper filtering. The VPP supply must be stable and within the specified range to ensure reliable wordline operation. Add a 0.1uF capacitor close to each VPP pin. Also, ensure the VDDQ supply (1.2V) is clean to maintain signal integrity on the data bus.
Compliance Information
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
