MT40A512M16LY-075:E vs MT40A512M16LY-062E Comparison

Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and MT40A512M16LY-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16LY-075:E

MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E βœ“ Active
Micron Technology
MT40A512M16LY-062E

MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16LY-062E βœ“ Active

Specification Comparison

Parameter MT40A512M16LY-075:E MT40A512M16LY-062E
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.80 $6.65
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) 8 Gbit
Data Rate 2666 MT/s 3200 MT/s
Clock Frequency 1.33 GHz 1.6 GHz
CAS Latency 19 β€”
Supply Voltage (VDD/VDDQ) 1.2V Β±60mV β€”
VPP Supply 2.5V (-125mV, +250mV) β€”
Interface Parallel β€”
Package 96-FBGA (7.5x13.5mm) 96-ball FBGA (7.5 x 13.5 mm)
Operating Temperature Range 0Β°C to +95Β°C β€”
Refresh Time 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C β€”
Internal Banks (x16) 8 banks (4 groups of 2) β€”
I/O Type 1.2V pseudo open-drain β€”
RoHS Compliant β€”
Mounting Type Surface Mount Surface Mount
Organization β€” 512M x 16
Access Time β€” 19 ns
Supply Voltage VDD/VDDQ β€” 1.2 V +/- 60 mV
Supply Voltage VPP β€” 2.5 V (-125 mV, +250 mV)
Bank Architecture β€” 16 banks in 2 groups of 4 (x16)
Refresh β€” 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C
I/O Interface β€” 1.2 V pseudo open-drain
Features β€” Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ
Operating Temperature β€” -40C to +95C (IT grade)
RoHS Status β€” Compliant

Datasheets & Resources

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