MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MPN: MT40A512M16LY-075:E ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.95 | $7.95 |
| 10 | $7.5 | $75.00 |
| 100 | $6.8 | $680.00 |
| 500 | $6.2 | $3,100.00 |
| 1,000 | $5.8 | $5,800.00 |
Drop-in alternatives for MT40A512M16LY-075:E — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →MT40A512M16LY-075:E Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) |
| Data Rate | 2666 MT/s |
| Clock Frequency | 1.33 GHz |
| CAS Latency | 19 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Interface | Parallel |
| Package | 96-FBGA (7.5x13.5mm) |
| Operating Temperature Range | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) |
| I/O Type | 1.2V pseudo open-drain |
| RoHS | Compliant |
| Mounting Type | Surface Mount |
MT40A512M16LY-075:E Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | VSS — Ground |
| Pin B1 | DQ1 — Data input/output 1 |
| Pin B2 | VDDQ — I/O power supply (1.2V) |
| Pin B3 | DQ2 — Data input/output 2 |
| Pin C1 | DQ3 — Data input/output 3 |
| Pin C2 | VSSQ — I/O ground |
| Pin C3 | DQ4 — Data input/output 4 |
| Pin D1 | DQ5 — Data input/output 5 |
| Pin D2 | VDD — Power supply (1.2V) |
| Pin D3 | DQ6 — Data input/output 6 |
| Pin E1 | DQ7 — Data input/output 7 |
| Pin E2 | VSS — Ground |
| Pin E3 | DQS0 — Data strobe 0 |
| Pin F1 | DQS0# — Data strobe 0 complement |
| Pin F2 | VDDQ — I/O power supply (1.2V) |
| Pin F3 | DM0 — Data mask 0 |
| Pin G1 | A0 — Address input 0 |
| Pin G2 | A1 — Address input 1 |
| Pin G3 | A2 — Address input 2 |
| Pin H1 | A3 — Address input 3 |
| Pin H2 | A4 — Address input 4 |
| Pin H3 | A5 — Address input 5 |
| Pin J1 | A6 — Address input 6 |
| Pin J2 | A7 — Address input 7 |
| Pin J3 | A8 — Address input 8 |
| Pin K1 | A9 — Address input 9 |
| Pin K2 | A10/AP — Address input 10 / Auto-precharge |
| Pin K3 | A11 — Address input 11 |
| Pin L1 | A12 — Address input 12 |
| Pin L2 | A13 — Address input 13 |
| Pin L3 | A14 — Address input 14 |
| Pin M1 | A15 — Address input 15 |
| Pin M2 | BA0 — Bank address 0 |
| Pin M3 | BA1 — Bank address 1 |
| Pin N1 | BA2 — Bank address 2 |
| Pin N2 | BG0 — Bank group 0 |
| Pin N3 | BG1 — Bank group 1 |
| Pin P1 | CK — Clock input |
| Pin P2 | CK# — Clock input complement |
| Pin P3 | CKE — Clock enable |
| Pin R1 | CS# — Chip select |
| Pin R2 | ODT — On-die termination |
| Pin R3 | RAS# — Row address strobe |
| Pin T1 | CAS# — Column address strobe |
| Pin T2 | WE# — Write enable |
| Pin T3 | RESET# — Reset |
| Pin U1 | VPP — Wordline boost supply (2.5V) |
| Pin U2 | VDD — Power supply (1.2V) |
| Pin U3 | VSS — Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A512M16LY-075:E is suitable for 6 applications: Enterprise Servers, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Telecommunications.
Enterprise Servers
The MT40A512M16LY-075:E provides 8Gb density and 2666 MT/s bandwidth, making it ideal for server main memory. Its low 1.2V operation reduces power consumption in data centers, while the 16-bit bus width allows flexible module configurations. The device supports ECC and CRC functions for reliable data integrity in mission-critical workloads.
Recommended
Networking Equipment
In routers and switches, the MT40A512M16LY-075:E offers high bandwidth for packet buffering and forwarding tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large routing tables. The device's on-die termination and write leveling features improve signal integrity in high-speed backplanes.
Recommended
High-Performance Computing
For HPC applications, the MT40A512M16LY-075:E provides the memory bandwidth needed for complex simulations and data analysis. Its 8Gb density allows large datasets to be held in memory, reducing I/O bottlenecks. The device's low power consumption is beneficial in large clusters where cooling is a concern.
Recommended
Embedded Systems
The MT40A512M16LY-075:E is suitable for embedded systems requiring large memory, such as industrial controllers and medical devices. Its 96-ball FBGA package is compact, and the 1.2V operation reduces heat generation. The device supports a wide temperature range (0°C to +95°C), making it reliable in harsh environments.
Recommended
Data Center Storage
In storage systems, the MT40A512M16LY-075:E is used for caching and metadata storage. Its high bandwidth accelerates read/write operations, while the 8Gb density supports large cache pools. The device's low power consumption is critical in storage arrays where many memory devices are used.
Recommended
Telecommunications
The MT40A512M16LY-075:E is used in telecom base stations and switches for buffering and protocol processing. Its 2666 MT/s data rate handles high-throughput traffic, and the 8Gb density supports large connection tables. The device's reliability features, such as CRC and data mask, ensure error-free operation in carrier-grade equipment.
Recommended
Recommended Products Summary
Engineering reference data for MT40A512M16LY-075:E — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A512M16JY-075E | MT40A512M16LY-062E | AS4C512M16D4A-62BCN | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 2666 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s |
| CAS Latency | 19 | 19 | 22 | 22 | 19 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Active | Active | End of Life | Active | Active |
Key Differentiators
- Active lifecycle status (vs MT40A512M16LY-062E)
- Lower speed grade for cost optimization (vs AS4C512M16D4A-62BCN)
- Same-brand drop-in compatibility (vs K4A8G165WB-BCWE)
Design Notes
Ensure VDD and VDDQ are clean and within 1.2V ±60mV. Use 0.1uF and 1uF ceramic capacitors placed close to each VDD/VDDQ pin to decouple high-frequency noise. The VPP supply (2.5V) must be stable and within -125mV/+250mV; use a dedicated regulator if necessary.
Follow Micron's DDR4 layout guidelines for signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within 100 mils for DQ/DQS groups. Place termination resistors for address/control signals if required by the controller.
The MT40A512M16LY-075:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Compliance Information
RoHS compliance indicated in datasheet. Other compliance details not specified in provided data.
