MT40A512M16LY-075:E vs MT40A512M16TB-062E Comparison

Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and MT40A512M16TB-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16LY-075:E

MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E ✓ Active
Micron Technology
MT40A512M16TB-062E

MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E ✓ Active

Specification Comparison

Parameter MT40A512M16LY-075:E MT40A512M16TB-062E
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.80 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) 8 Gbit
Data Rate 2666 MT/s 1600 MHz (DDR4-3200)
Clock Frequency 1.33 GHz
CAS Latency 19
Supply Voltage (VDD/VDDQ) 1.2V ±60mV
VPP Supply 2.5V (-125mV, +250mV)
Interface Parallel Parallel
Package 96-FBGA (7.5x13.5mm) 96-FBGA (7.5x13 mm)
Operating Temperature Range 0°C to +95°C 0°C to +95°C (standard), -40°C to +95°C (IT)
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C
Internal Banks (x16) 8 banks (4 groups of 2)
I/O Type 1.2V pseudo open-drain
RoHS Compliant
Mounting Type Surface Mount Surface Mount
Organization 512M x 16
Supply Voltage - VDD/VDDQ 1.2V ±60mV
Supply Voltage - VPP 2.5V, -125mV, +250mV
tRCD 19 ns
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration
RoHS Status Compliant
REACH Status Compliant

Datasheets & Resources

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