MT40A512M16TB-062E:R vs K4B4G1646D-BYK00 Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E:R

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R βœ“ Active
Samsung Electronics
K4B4G1646D-BYK00

K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung

K4B4G1646D-BYK00 βœ“ Active

Specification Comparison

Parameter MT40A512M16TB-062E:R K4B4G1646D-BYK00
Brand Micron Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $60.00 $7.50
Memory Type DDR4 SDRAM DDR3L SDRAM
Memory Size 8 Gbit (512M x 16) β€”
Data Rate 3200 MT/s 1600 Mbps
Clock Frequency 1600 MHz β€”
CAS Latency 22 Programmable
Supply Voltage (VDD/VDDQ) 1.2V Β±60mV β€”
VPP Voltage 2.5V (-125mV, +250mV) β€”
Operating Temperature 0Β°C to +95Β°C 0Β°C to 85Β°C
Package 96-FBGA (7.5x13 mm) 96-ball TFBGA
Interface Parallel β€”
Data Bus Width 16 bits β€”
Refresh Time 8192 cycles (64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C) β€”
I/O Type 1.2V pseudo open-drain β€”
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration β€”
RoHS Status Compliant β€”
Density β€” 4 Gb
Organization β€” 256M x 16
Supply Voltage β€” 1.35 V (also operates at 1.5 V)
Number of Terminals β€” 96
Additional Features β€” Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination
RoHS β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes
Package Shape β€” RECTANGULAR
Temperature Grade β€” OTHER

Datasheets & Resources

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