MT40A512M16TD-062E vs IS43QR16512B-062AABL Comparison

Detailed side-by-side comparison of MT40A512M16TD-062E by Micron Technology and IS43QR16512B-062AABL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TD-062E

MT40A512M16TD-062E - 8Gb DDR4 SDRAM 512Mx16 1.2V | Micron

MT40A512M16TD-062E βœ“ Active
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL

IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI

IS43QR16512B-062AABL βœ“ Active

Specification Comparison

Parameter MT40A512M16TD-062E IS43QR16512B-062AABL
Brand Micron Technology ISSI, Integrated Silicon Solution Inc
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.90 $8.10
Memory Type DDR4 SDRAM (volatile DRAM) DDR4 SDRAM
Memory Size 8 Gbit 8 Gbit
Memory Organization 512M x 16 β€”
Data Rate 3200 MT/s (DDR4-3200) 3200 MT/s
Clock Frequency 1600 MHz 1.6 GHz
Access Time 19 ns β€”
Supply Voltage (VDD) 1.2 V β€”
VPP Supply 2.5 V β€”
Interface Parallel POD (Pseudo Open Drain)
Package 96-ball FBGA (7.5 x 13 mm) 96-TWBGA (7.5x13.5 mm)
Mounting Type Surface Mount Surface Mount
Burst Length BL8 / BC4 β€”
Features Programmable data strobe preambles, ODT, TCSR β€”
Temperature Grade Commercial (0C to +85C); AUT/AIT/AAT variants available β€”
Operating Temperature [DATA_NEEDED: operating temperature range for TD grade] 0Β°C to +95Β°C (case)
CAS Latency [DATA_NEEDED: CL value] 22-22-22
RoHS Status [DATA_NEEDED: RoHS status] β€”
Organization β€” 512M x 16
Supply Voltage β€” 1.2 V
tRCD β€” 19 ns
RoHS β€” Compliant
Number of Pins β€” 96
Data Bus Width β€” 16 bit

Datasheets & Resources

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