MT40A512M16TD-062E vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16TD-062E by Micron Technology and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TD-062E
MT40A512M16TD-062E - 8Gb DDR4 SDRAM 512Mx16 1.2V | Micron
MT40A512M16TD-062E β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | MT40A512M16TD-062E | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.90 | $38.00 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 3200 MT/s (DDR4-3200) | 3200 Mbps |
| Clock Frequency | 1600 MHz | β |
| Access Time | 19 ns | β |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| VPP Supply | 2.5 V | β |
| Interface | Parallel | Differential (CK, /CK) |
| Package | 96-ball FBGA (7.5 x 13 mm) | 96-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Burst Length | BL8 / BC4 | 8 (BL8) / 4 (BC4) |
| Features | Programmable data strobe preambles, ODT, TCSR | β |
| Temperature Grade | Commercial (0C to +85C); AUT/AIT/AAT variants available | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range for TD grade] | β |
| CAS Latency | [DATA_NEEDED: CL value] | [DATA_NEEDED: CAS Latency] |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| VPP Voltage | β | 2.5 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| JEDEC Standard | β | JEDEC DDR4 |