MT40A512M16TD-062E vs MT40A512M16TB-062E:R Comparison

Detailed side-by-side comparison of MT40A512M16TD-062E by Micron Technology and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TD-062E

MT40A512M16TD-062E - 8Gb DDR4 SDRAM 512Mx16 1.2V | Micron

MT40A512M16TD-062E βœ“ Active
Micron Technology
MT40A512M16TB-062E:R

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R βœ“ Active

Specification Comparison

Parameter MT40A512M16TD-062E MT40A512M16TB-062E:R
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.90 $60.00
Memory Type DDR4 SDRAM (volatile DRAM) DDR4 SDRAM
Memory Size 8 Gbit 8 Gbit (512M x 16)
Memory Organization 512M x 16 β€”
Data Rate 3200 MT/s (DDR4-3200) 3200 MT/s
Clock Frequency 1600 MHz 1600 MHz
Access Time 19 ns β€”
Supply Voltage (VDD) 1.2 V β€”
VPP Supply 2.5 V β€”
Interface Parallel Parallel
Package 96-ball FBGA (7.5 x 13 mm) 96-FBGA (7.5x13 mm)
Mounting Type Surface Mount β€”
Burst Length BL8 / BC4 β€”
Features Programmable data strobe preambles, ODT, TCSR Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration
Temperature Grade Commercial (0C to +85C); AUT/AIT/AAT variants available β€”
Operating Temperature [DATA_NEEDED: operating temperature range for TD grade] 0Β°C to +95Β°C
CAS Latency [DATA_NEEDED: CL value] 22
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Supply Voltage (VDD/VDDQ) β€” 1.2V Β±60mV
VPP Voltage β€” 2.5V (-125mV, +250mV)
Data Bus Width β€” 16 bits
Refresh Time β€” 8192 cycles (64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C)
I/O Type β€” 1.2V pseudo open-drain

Datasheets & Resources

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