MT41K256M16RE-125:D vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of MT41K256M16RE-125:D by Micron Technology and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16RE-125:D
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D β ActiveSamsung Electronics
K4B4G1646D-BYH9
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 β ActiveSpecification Comparison
| Parameter | MT41K256M16RE-125:D | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.19 | $2.30 |
| Memory Type | DDR3L SDRAM | β |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | 1333 Mbps |
| CAS Latency | 11 | Programmable |
| Package | FBGA-96 (9x14 mm) | 96FBGA |
| Operating Temperature | 0C to +95C (TC) | 0 ~ 85 Β°C |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Burst Length | 8, 4 | β |
| On-Die Termination | Yes | Yes |
| Auto-Refresh | Yes | β |
| Self-Refresh | Yes | β |
| Ball Pitch | 0.8 mm | β |
| Number of Banks | β | 8 |
| Write Latency | β | Programmable |
| Internal Calibration | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| Die Version | β | D-die |