MT41K256M16TW-093 vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of MT41K256M16TW-093 by Micron Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16TW-093
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MT41K256M16TW-093 β Active
Specification Comparison
| Parameter | MT41K256M16TW-093 | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $15.50 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | β |
| Data Bus Width | 16 bit | β |
| Clock Frequency | 1.066 GHz | 933 MHz |
| Data Rate | 2133 MT/s | 1866 Mbps/pin |
| Access Time | 20 ns | β |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.28 V to 1.575 V) |
| Interface Type | Parallel | β |
| Package | 96-FBGA (8x14 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | 0Β°C to +95Β°C (TC) | β |
| RoHS Status | Compliant | β |
| REACH Status | Compliant | β |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| RoHS | β | Compliant |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | [DATA_NEEDED: Burst Length] |
| Number of Pins | β | 96 |