MW4IC915MBR1 vs MW4IC915NBR1 Comparison
Detailed side-by-side comparison of MW4IC915MBR1 by NXP Semiconductors and MW4IC915NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MW4IC915NBR1 - 15W RF LDMOS PA 860-960MHz | NXP TO-272WB-16
MW4IC915NBR1 ✓ ActiveSpecification Comparison
| Parameter | MW4IC915MBR1 | MW4IC915NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $21.50 | $23.75 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale / Motorola) |
| Product Family | MW4IC915 | — |
| Function | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 750 MHz to 1 GHz (operating band 860-960 MHz per datasheet) | — |
| Output Power (CW) | 15 W typical at 26 V | — |
| Supply Voltage | 26 V typical | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | High Voltage LDMOS IC |
| Package | TO-272 WB-16 (Case 1329-09), overmolded plastic | TO-272 WB-16 (over-molded plastic) |
| Configuration | Two-stage integrated amplifier with on-chip matching | — |
| Target Applications | GSM, GSM EDGE, N-CDMA, W-CDMA base stations | — |
| Input Matching | On-chip, integrated | — |
| Output Matching | On-chip, integrated | — |
| Mounting Type | Surface Mount / Flange (TO-272 style) | Surface Mount |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status - N-suffix implies lead-free transition per datasheet PDF title] |
| Lead Free | Yes | — |
| Part Number | — | MW4IC915NBR1 |
| Part Family | — | MW4IC915NB / MW4IC915GNB |
| Device Type | — | RF Power Amplifier (LDMOS, multi-stage, integrated) |
| Frequency Range (Target Band) | — | 860 MHz to 960 MHz |
| Usable Frequency Range | — | 750 MHz to 1000 MHz |
| Supply Voltage (Typical) | — | 26 V |
| Supply Voltage (Operating Range) | — | 26 V to 28 V |
| Output Power (Pulsed / CW) | — | 15 W |
| Target Modulations | — | GSM, GSM EDGE, TDMA, N-CDMA, W-CDMA |
| Construction | — | Multi-stage, on-chip input matching |
| Operating Temperature (Min) | — | -10 °C |
| Operating Temperature (Max) | — | +85 °C |
| Replaces | — | MW4IC915MBR1 (N suffix indicates lead-free transition, no form/fit/function change) |