MW4IC915MBR1 vs MW4IC915NBR1 Comparação
Comparação detalhada lado a lado de MW4IC915MBR1 por NXP Semiconductors e MW4IC915NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MW4IC915MBR1 | MW4IC915NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $21,50 | $23,75 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale / Motorola) |
| Product Family | MW4IC915 | — |
| Função | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 750 MHz to 1 GHz (operating band 860-960 MHz per datasheet) | — |
| Output Power (CW) | 15 W typical at 26 V | — |
| Tensão de alimentação | 26 V typical | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | High Voltage LDMOS IC |
| Encapsulamento | TO-272 WB-16 (Case 1329-09), overmolded plastic | TO-272 WB-16 (over-molded plastic) |
| Configuration | Two-stage integrated amplifier with on-chip matching | — |
| Target Applications | GSM, GSM EDGE, N-CDMA, W-CDMA base stations | — |
| Input Matching | On-chip, integrated | — |
| Output Matching | On-chip, integrated | — |
| Tipo de montagem | Surface Mount / Flange (TO-272 style) | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status - N-suffix implies lead-free transition per datasheet PDF title] |
| Lead Free | Yes | — |
| Part Number | — | MW4IC915NBR1 |
| Part Family | — | MW4IC915NB / MW4IC915GNB |
| Device Type | — | RF Power Amplifier (LDMOS, multi-stage, integrated) |
| Frequency Range (Target Band) | — | 860 MHz to 960 MHz |
| Usable Frequency Range | — | 750 MHz to 1000 MHz |
| Supply Voltage (Typical) | — | 26 V |
| Supply Voltage (Operating Range) | — | 26 V to 28 V |
| Output Power (Pulsed / CW) | — | 15 W |
| Target Modulations | — | GSM, GSM EDGE, TDMA, N-CDMA, W-CDMA |
| Construction | — | Multi-stage, on-chip input matching |
| Operating Temperature (Min) | — | -10 °C |
| Operating Temperature (Max) | — | +85 °C |
| Replaces | — | MW4IC915MBR1 (N suffix indicates lead-free transition, no form/fit/function change) |