MW7IC2220NR1 vs MW7IC2220NBR1 Comparison
Detailed side-by-side comparison of MW7IC2220NR1 by NXP Semiconductors and MW7IC2220NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
MW7IC2220NR1 ✓ ActiveNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActiveSpecification Comparison
| Parameter | MW7IC2220NR1 | MW7IC2220NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $18.75 | $21.50 |
| Technology | LDMOS (Laterally Diffused MOSFET) | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | W-CDMA / Wideband Integrated Power Amplifier | — |
| Frequency Range | 2000 MHz to 2200 MHz | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Band (W-CDMA) | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2167.5 MHz | — |
| Output Power (Avg, W-CDMA) | 2 W Avg. | — |
| Supply Voltage (VDD) | 28 V typical | — |
| Drain Voltage Rating | 24 V to 32 V operational range | — |
| Quiescent Current (IDQ1) | 80 mA | — |
| Quiescent Current (IDQ2) | 300 mA | — |
| Small-Signal Gain | 31 dB | 31 dB (typical at 2.17 GHz) |
| Input/Output Matching | On-chip, 50 ohm nominal | — |
| Stages | Two-stage integrated amplifier | — |
| Package / Case | TO-270-16 Variant, Flat Leads (TO-270WB-16) | — |
| Mounting Type | Surface Mount (with bolted flange/heatsink tab) | Surface Mount (flange/over-molded) |
| Operating Temperature | -40C to +150C (junction) | — |
| Packaging | Tape & Reel (R1 suffix) | — |
| Modulation Formats Supported | W-CDMA, TD-SCDMA, single-carrier W-CDMA | — |
| Function | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |