NT5AD512M16 vs MT40A512M16JY-07EAIT:B Comparison
Detailed side-by-side comparison of NT5AD512M16 by Nanya Technology and MT40A512M16JY-07EAIT:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16
NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
NT5AD512M16 β ActiveMicron Technology
MT40A512M16JY-07EAIT:B
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B β ActiveSpecification Comparison
| Parameter | NT5AD512M16 | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $73.75 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | β |
| Supply Voltage (VDD) | 1.2 V | β |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 MT/s |
| Package | 96-ball FBGA | 96-FBGA (8x14) |
| Operating Temperature (Commercial) | 0Β°C to +95Β°C | β |
| Operating Temperature (Industrial) | -40Β°C to +95Β°C | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | Compliant |
| Memory Size | β | 8 Gbit |
| Clock Frequency | β | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Voltage | β | 2.5V, -125mV, +250mV |
| Interface | β | Parallel |
| Operating Temperature Range | β | -40Β°C to +105Β°C (AIT grade) |
| Refresh Time | β | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C |
| I/O Type | β | 1.2V pseudo open-drain |
| VREFDQ | β | On-die, internal, adjustable |
| AEC-Q100 | β | Qualified (AIT suffix) |