NT5AD512M16C4-HR vs MT40A512M16TB-062E:J Comparison

Detailed side-by-side comparison of NT5AD512M16C4-HR by Nanya Technology and MT40A512M16TB-062E:J by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16C4-HR

NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech

NT5AD512M16C4-HR βœ“ Active
Micron Technology
MT40A512M16TB-062E:J

MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J βœ“ Active

Specification Comparison

Parameter NT5AD512M16C4-HR MT40A512M16TB-062E:J
Brand Nanya Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $43.10 $8.10
Memory Type DDR4 SDRAM SDRAM - DDR4
Organization 512M x 16 β€”
Density 8 Gbit β€”
Supply Voltage 1.2 V β€”
Data Rate 1.333 GHz (DDR4-2666) β€”
Operating Temperature 0Β°C to +95Β°C β€”
Package FBGA-96 (TFBGA) 96-FBGA (7.5x13.5 mm)
Number of Pins 96 β€”
Auto Self-Refresh Yes β€”
Built-in Temperature Sensor Yes β€”
Auto Precharge Yes β€”
Asynchronous Reset Yes β€”
Data Mask Yes β€”
Write Leveling Yes β€”
Dynamic On-Chip Termination Yes β€”
ZQ Calibration Yes β€”
CRC Function Yes β€”
RoHS Compliant β€”
Memory Size β€” 8Gbit (512M x 16)
Clock Frequency β€” 1.6 GHz
Access Time β€” 19 ns
Supply Voltage (VDD/VDDQ) β€” 1.2V Β±60mV
VPP Supply Voltage β€” 2.5V (-125mV, +250mV)
I/O Type β€” 1.2V pseudo open-drain
Refresh Time β€” 64ms at -40Β°C to 85Β°C; 32ms at >85Β°C to 95Β°C; 16ms at >95Β°C
Internal Banks (x16) β€” 8 (2 groups of 4 banks each)
Prefetch Architecture β€” 8n-bit
Operating Temperature Range β€” 0Β°C to 95Β°C
RoHS Status β€” Compliant
Lead-Free β€” Yes
Mounting Type β€” Surface Mount

Datasheets & Resources

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