MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MPN: MT40A512M16TB-062E:J ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
Drop-in alternatives for MT40A512M16TB-062E:J — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT40A512M16TB-062E:R
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View Datasheet →MT40A512M16TB-062E:J Maximum Ratings & Electrical Characteristics
| Memory Type | SDRAM - DDR4 |
| Memory Size | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) |
| I/O Type | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | 8n-bit |
| Package | 96-FBGA (7.5x13.5 mm) |
| Operating Temperature Range | 0°C to 95°C |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Mounting Type | Surface Mount |
MT40A512M16TB-062E:J Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply (1.2V) |
| Pin C2 | DQS0 — Data strobe 0 |
| Pin C3 | DQS0# — Data strobe 0 complement |
| Pin D1 | VSS — Ground |
| Pin D2 | A0 — Address input 0 |
| Pin D3 | A1 — Address input 1 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A512M16TB-062E:J is suitable for 6 applications: High-Performance Computing, Networking Equipment, Data Center Storage, Embedded Systems, Telecommunications, Artificial Intelligence and Machine Learning.
High-Performance Computing
The MT40A512M16TB-062E:J provides 8Gb density and 1.6 GHz speed, making it ideal for servers and workstations requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device supports advanced features like on-die ECC and bank grouping, enhancing reliability and performance in compute-intensive workloads.
Recommended
Networking Equipment
In routers and switches, the MT40A512M16TB-062E:J offers high-speed data buffering and packet processing capabilities. Its 1.6 GHz clock and 19 ns access time ensure low latency, critical for network throughput. The device's low power consumption and small footprint make it suitable for compact line cards and edge devices. It supports multiple bank groups for efficient memory access patterns in network applications.
Recommended
Data Center Storage
The MT40A512M16TB-062E:J is well-suited for SSD controllers and storage arrays, providing high bandwidth for caching and metadata operations. Its 8Gb density allows for large memory pools, while the 1.2V supply reduces power in dense storage systems. The device's temperature range of 0°C to 95°C supports typical data center environments. It also features on-die VREFDQ for improved signal integrity in high-speed interfaces.
Recommended
Embedded Systems
For embedded applications like industrial controllers and medical devices, the MT40A512M16TB-062E:J offers a balance of performance and power efficiency. Its 1.2V operation and 96-FBGA package are ideal for space-constrained designs. The device supports extended temperature operation up to 95°C, making it suitable for harsh environments. It also provides reliable data integrity with on-die ECC and refresh management.
Recommended
Telecommunications
In telecom infrastructure, the MT40A512M16TB-062E:J supports high-speed data processing and buffering in base stations and switches. Its 1.6 GHz speed and low latency are essential for real-time signal processing. The device's low power consumption helps reduce operational costs in remote sites. It also features programmable data strobe preambles for flexible timing control in complex systems.
Recommended
Artificial Intelligence and Machine Learning
The MT40A512M16TB-062E:J provides high memory bandwidth for AI inference and training workloads. Its 8Gb density and 1.6 GHz speed enable large model storage and fast data access. The device's low power consumption is beneficial for edge AI devices. It supports multiple bank groups for efficient parallel access, improving performance in matrix operations.
Recommended
Recommended Products Summary
Engineering reference data for MT40A512M16TB-062E:J — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A512M16TB-062E:R | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC | NT5AD512M16C4-JR |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix | Nanya Technology |
| Memory Size | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz |
| Access Time | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV |
| Operating Temperature Range | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Higher clock frequency (1.6 GHz) compared to some alternatives (vs K4A8G165WB-BCTD)
- Industrial temperature grade option available (vs MT40A512M16TB-062E:R)
- Same-brand drop-in alternatives ensure compatibility (vs H5AN8G6NDJR-XNC)
Design Notes
Ensure stable 1.2V VDD and VDDQ supplies with adequate decoupling capacitors (e.g., 0.1uF and 1uF) placed close to the power pins. The VPP supply at 2.5V must also be decoupled. Follow Micron's power-up sequence: VDD and VDDQ must ramp up together, followed by VPP. Incorrect sequencing can cause device damage.
For high-speed DDR4 signals, maintain controlled impedance (e.g., 40-50 ohms) for data, address, and control lines. Use differential routing for DQS and clock signals. Keep trace lengths matched within 100 mils to minimize skew. Place termination resistors (e.g., 40-60 ohms) for address and control lines to reduce reflections.
The MT40A512M16TB-062E:J operates up to 95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
Compliance Information
RoHS compliant and lead-free per distributor listings. AEC-Q100 not applicable for commercial-grade DDR4.
