NT5AD512M16C4-HRI vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of NT5AD512M16C4-HRI by Nanya Technology and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-HRI
NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
NT5AD512M16C4-HRI β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | NT5AD512M16C4-HRI | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.10 | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gbit | 8 Gb |
| Supply Voltage | 1.2 V | β |
| Package | 96-pin TFBGA | 96-FBGA |
| Temperature Grade | Industrial (0Β°C to +95Β°C) | β |
| Data Rate | 3200 MT/s (H speed grade) | 3200 Mbps |
| CAS Latency | 22 | [DATA_NEEDED: CAS Latency] |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | β |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Voltage | β | 2.5 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Mounting Type | β | Surface Mount |
| Burst Length | β | 8 (BL8) / 4 (BC4) |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| Interface | β | Differential (CK, /CK) |
| RoHS Status | β | Compliant |
| JEDEC Standard | β | JEDEC DDR4 |