Nanya Technology

NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology

MPN: NT5AD512M16C4-HRI βœ“ Active
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1.2 V Vdss 96-pin TFBGA Package DDR4 SDRAM Memory
From $24.1 USD / Unit
MOQ: 1 |
Price updated: 2026-08-20
Volume Pricing
Qty Unit Price Extended
1 $34.17 $34.17
10 $31.5 $315.00
100 $28.9 $2,890.00
500 $26.4 $13,200.00
1,000 $24.1 $24,100.00
ℹ️ All prices are in USD

Drop-in alternatives for NT5AD512M16C4-HRI β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

NT5AD512M16C4-JRI

βœ… Drop-In
Nanya Technology
πŸ“¦ 96-pin TFBGA
DDR4 SDRAM Β· 8 Gbit Β· 512M x 16 Β· 3200 Mbps (DDR4-3200) Β· 1.2 V Β· -40Β°C to +95Β°C Β· TFBGA-96 Β· Surface Mount

βœ“ In Stock

$75.58 / Unit

View Datasheet β†’

NT5AD512M16C4-HR

βœ… Drop-In
Nanya Technology
πŸ“¦ 96-pin TFBGA
DDR4 SDRAM Β· 512M x 16 Β· 8 Gbit Β· 1.2 V Β· 1.333 GHz (DDR4-2666) Β· 0Β°C to +95Β°C Β· FBGA-96 (TFBGA) Β· 96

βœ“ In Stock

$43.1 / Unit

View Datasheet β†’

NT5AD512M16C4-JR

βœ… Drop-In
Nanya Technology
πŸ“¦ 96-pin TFBGA
DDR4 SDRAM Β· 512M x16 Β· 8 Gbit Β· 1.2 V Β· 1.6 GHz (DDR4-3200) Β· TFBGA-96 Β· 0Β°C to +95Β°C Β· 0.023 A (max)

βœ“ In Stock

$73.75 / Unit

View Datasheet β†’

MT40A512M16TB-062E

βœ… Drop-In
Micron Technology
πŸ“¦ 96-ball TFBGA
DDR4 SDRAM Β· 8 Gbit Β· 512M x 16 Β· 1600 MHz (DDR4-3200) Β· 1.2V Β±60mV Β· 2.5V, -125mV, +250mV Β· 19 ns Β· 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C

βœ“ In Stock

$60 / Unit

View Datasheet β†’

K4A8G165WC-BCWE

βœ… Drop-In
Samsung Electronics
πŸ“¦ 96-ball FBGA
DDR4 SDRAM Β· 8 Gb Β· 512M x 16 Β· 3200 Mbps Β· 1.2 V Β· 2.5 V Β· 0Β°C to +95Β°C Β· 96-FBGA

βœ“ In Stock

$38 / Unit

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H5AN8G6NCJR-VKC

βœ… Drop-In
SK hynix
πŸ“¦ 96-ball FBGA
DDR4 SDRAM Β· 8 Gb Β· 512M x 16 Β· 2666 Mbps Β· 1.2 V (1.14V to 1.26V) Β· 0Β°C to +95Β°C Β· FBGA-96 Β· 28 mA

βœ“ In Stock

$60 / Unit

View Datasheet β†’

NT5AD512M16C4-HRI Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Organization 512M x 16
Density 8 Gbit
Supply Voltage 1.2 V
Package 96-pin TFBGA
Temperature Grade Industrial (0Β°C to +95Β°C)
Data Rate 3200 MT/s (H speed grade)
CAS Latency 22
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
Write Leveling Yes
Dynamic On-Chip Termination Yes
ZQ Calibration Yes
CRC Function Yes
RoHS Compliant

NT5AD512M16C4-HRI Pin Configuration

Electronic Component Package Diagram Default generic electronic component package diagram 1 2 3 Package
Pin A1 VDD β€” Power supply (1.2V)
Pin A2 DQ0 β€” Data input/output 0
Pin A3 DQ1 β€” Data input/output 1
Pin A4 VSS β€” Ground
Pin A5 DQ2 β€” Data input/output 2
Pin A6 DQ3 β€” Data input/output 3
Pin A7 VDD β€” Power supply (1.2V)
Pin A8 DQ4 β€” Data input/output 4
Pin A9 DQ5 β€” Data input/output 5
Pin A10 VSS β€” Ground
Pin A11 DQ6 β€” Data input/output 6
Pin A12 DQ7 β€” Data input/output 7
Pin B1 VDD β€” Power supply (1.2V)
Pin B2 DQ8 β€” Data input/output 8
Pin B3 DQ9 β€” Data input/output 9
Pin B4 VSS β€” Ground
Pin B5 DQ10 β€” Data input/output 10
Pin B6 DQ11 β€” Data input/output 11
Pin B7 VDD β€” Power supply (1.2V)
Pin B8 DQ12 β€” Data input/output 12
Pin B9 DQ13 β€” Data input/output 13
Pin B10 VSS β€” Ground
Pin B11 DQ14 β€” Data input/output 14
Pin B12 DQ15 β€” Data input/output 15
Pin C1 VDD β€” Power supply (1.2V)
Pin C2 DQS0 β€” Data strobe 0
Pin C3 DQS0# β€” Data strobe 0 complement
Pin C4 VSS β€” Ground
Pin C5 DQS1 β€” Data strobe 1
Pin C6 DQS1# β€” Data strobe 1 complement
Pin C7 VDD β€” Power supply (1.2V)
Pin C8 DQS2 β€” Data strobe 2
Pin C9 DQS2# β€” Data strobe 2 complement
Pin C10 VSS β€” Ground
Pin C11 DQS3 β€” Data strobe 3
Pin C12 DQS3# β€” Data strobe 3 complement
Pin D1 VDD β€” Power supply (1.2V)
Pin D2 DM0 β€” Data mask 0
Pin D3 DM1 β€” Data mask 1
Pin D4 VSS β€” Ground
Pin D5 DM2 β€” Data mask 2
Pin D6 DM3 β€” Data mask 3
Pin D7 VDD β€” Power supply (1.2V)
Pin D8 A0 β€” Address input 0
Pin D9 A1 β€” Address input 1
Pin D10 VSS β€” Ground
Pin D11 A2 β€” Address input 2
Pin D12 A3 β€” Address input 3
Pin E1 VDD β€” Power supply (1.2V)
Pin E2 A4 β€” Address input 4
Pin E3 A5 β€” Address input 5
Pin E4 VSS β€” Ground
Pin E5 A6 β€” Address input 6
Pin E6 A7 β€” Address input 7
Pin E7 VDD β€” Power supply (1.2V)
Pin E8 A8 β€” Address input 8
Pin E9 A9 β€” Address input 9
Pin E10 VSS β€” Ground
Pin E11 A10/AP β€” Address input 10 / Auto precharge
Pin E12 A11 β€” Address input 11
Pin F1 VDD β€” Power supply (1.2V)
Pin F2 A12 β€” Address input 12
Pin F3 A13 β€” Address input 13
Pin F4 VSS β€” Ground
Pin F5 A14 β€” Address input 14
Pin F6 A15 β€” Address input 15
Pin F7 VDD β€” Power supply (1.2V)
Pin F8 BA0 β€” Bank address 0
Pin F9 BA1 β€” Bank address 1
Pin F10 VSS β€” Ground
Pin F11 BA2 β€” Bank address 2
Pin F12 BG0 β€” Bank group 0
Pin G1 VDD β€” Power supply (1.2V)
Pin G2 BG1 β€” Bank group 1
Pin G3 CK β€” Clock input
Pin G4 VSS β€” Ground
Pin G5 CK# β€” Clock input complement
Pin G6 CKE β€” Clock enable
Pin G7 VDD β€” Power supply (1.2V)
Pin G8 CS# β€” Chip select
Pin G9 RAS# β€” Row address strobe
Pin G10 VSS β€” Ground
Pin G11 CAS# β€” Column address strobe
Pin G12 WE# β€” Write enable
Pin H1 VDD β€” Power supply (1.2V)
Pin H2 RESET# β€” Asynchronous reset
Pin H3 ODT β€” On-die termination
Pin H4 VSS β€” Ground
Pin H5 ZQ β€” ZQ calibration
Pin H6 VDDQ β€” Power supply for output (1.2V)
Pin H7 VSSQ β€” Ground for output
Pin H8 VDDQ β€” Power supply for output (1.2V)
Pin H9 VSSQ β€” Ground for output
Pin H10 VDDQ β€” Power supply for output (1.2V)
Pin H11 VSSQ β€” Ground for output
Pin H12 VDDQ β€” Power supply for output (1.2V)
Pin J1 VDDQ β€” Power supply for output (1.2V)
Pin J2 VSSQ β€” Ground for output
Pin J3 VDDQ β€” Power supply for output (1.2V)
Pin J4 VSSQ β€” Ground for output
Pin J5 VDDQ β€” Power supply for output (1.2V)
Pin J6 VSSQ β€” Ground for output
Pin J7 VDDQ β€” Power supply for output (1.2V)
Pin J8 VSSQ β€” Ground for output
Pin J9 VDDQ β€” Power supply for output (1.2V)
Pin J10 VSSQ β€” Ground for output
Pin J11 VDDQ β€” Power supply for output (1.2V)
Pin J12 VSSQ β€” Ground for output

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for NT5AD512M16C4-HRI Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

NT5AD512M16C4-HRI is suitable for 6 applications: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Test and Measurement Equipment.

🏭

Industrial Controllers

The NT5AD512M16C4-HRI is ideal for industrial controllers that require reliable operation in harsh environments. Its industrial temperature range (0Β°C to +95Β°C) ensures stable performance in factory automation, process control, and robotics. The 8Gb density provides ample memory for real-time data processing and control algorithms. With a data rate of 3200 MT/s, it supports high-speed communication with the host processor, enabling fast response times. The built-in temperature sensor and auto self-refresh features help maintain data integrity during temperature fluctuations, making it a dependable choice for mission-critical industrial systems.

πŸ–₯️

Embedded Computing Modules

For embedded computing modules such as single-board computers and edge computing devices, the NT5AD512M16C4-HRI provides high-density memory in a compact 96-pin TFBGA package. Its 1.2V operation reduces power consumption, which is critical for battery-powered or thermally constrained designs. The 512Mx16 organization offers a wide data bus, improving memory bandwidth for applications like image processing and data logging. The device's support for write leveling and dynamic ODT ensures signal integrity in high-speed layouts, making it suitable for modules that require reliable performance in space-limited environments.

🌐

Networking Equipment

In networking equipment such as routers, switches, and firewalls, the NT5AD512M16C4-HRI offers the high bandwidth and low latency required for packet processing and forwarding. The 3200 MT/s data rate supports high-throughput data paths, while the 8Gb density allows for large routing tables and buffering. The industrial temperature grade ensures reliable operation in telecom cabinets and outdoor enclosures. Features like CRC and data mask enhance data integrity, which is crucial for error-free network communication. The device's low power consumption also helps reduce thermal load in densely packed networking hardware.

πŸ–₯️

Data Storage Systems

The NT5AD512M16C4-HRI is well-suited for data storage systems, including SSDs, RAID controllers, and network-attached storage (NAS). Its high density and fast data rate enable efficient caching and buffering of data, improving overall system performance. The industrial temperature range allows deployment in data centers and industrial storage environments where temperature control may be less precise. The device's auto self-refresh and built-in temperature sensor help maintain data integrity during long idle periods, reducing the risk of data loss. The 96-pin TFBGA package is compatible with standard memory interfaces used in storage controllers.

πŸš—

Automotive Infotainment

Although the NT5AD512M16C4-HRI has an industrial temperature grade, it can be used in automotive infotainment systems that operate within 0Β°C to +95Β°C. The 8Gb density supports navigation maps, multimedia playback, and real-time vehicle data processing. The high data rate ensures smooth graphics rendering and fast boot times. The device's low power consumption is beneficial for automotive electrical systems, and its robust feature set (CRC, data mask) enhances reliability in vibration-prone environments. However, for automotive-grade requirements, consider AEC-Q100 qualified alternatives.

πŸ”§

Test and Measurement Equipment

In test and measurement equipment such as oscilloscopes, logic analyzers, and signal generators, the NT5AD512M16C4-HRI provides high-speed data buffering and storage. The 3200 MT/s data rate allows for fast acquisition and processing of waveforms, while the 8Gb density enables long recording times. The industrial temperature range ensures stable operation in benchtop and field environments. Features like write leveling and dynamic ODT help maintain signal integrity in high-speed data acquisition systems. The device's low power consumption is advantageous for portable test instruments.

What is the memory density and organization of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI is an 8 Gigabit DDR4 SDRAM organized as 512M x 16. According to the Nanya Technology datasheet, it operates at 1.2V and is available in a 96-pin TFBGA package. This configuration provides a total of 8Gb of memory, suitable for applications requiring high-density volatile storage.
What is the operating temperature range of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI has an industrial temperature grade of 0Β°C to +95Β°C. This is specified in the Nanya Technology datasheet and makes the device suitable for industrial applications where ambient temperatures may exceed commercial ranges. The 'I' suffix in the part number indicates the industrial temperature grade.
What is the price of NT5AD512M16C4-HRI?
As of 2026-08-20, the NT5AD512M16C4-HRI is priced at $34.17 for a single unit at LCSC Electronics. Volume pricing is available at lower per-unit costs, with 1000-piece pricing around $24.10. Prices may vary by distributor and quantity, so it is recommended to check current stock and quotes from authorized distributors.
Where can I buy NT5AD512M16C4-HRI online?
The NT5AD512M16C4-HRI is available from several online distributors including LCSC Electronics, Arrow Electronics, Win Source, and Ampheo. As of 2026-08-20, LCSC lists it in stock with a unit price of $34.17. You can also request quotes from distributors like Arrow and Win Source for volume pricing and availability.
What is the lead time for NT5AD512M16C4-HRI?
The lead time for NT5AD512M16C4-HRI varies by distributor and stock availability. As of 2026-08-20, LCSC shows the part in stock, suggesting immediate availability. For larger quantities, lead times may extend to 4-8 weeks depending on the distributor's inventory and Nanya's production schedule. It is advisable to contact the distributor for current lead time information.
Is NT5AD512M16C4-HRI in stock?
Yes, as of 2026-08-20, the NT5AD512M16C4-HRI is in stock at LCSC Electronics, which lists 79 units available. Other distributors like Arrow and Win Source may also have stock, but availability can change rapidly. Check the distributor's website for real-time inventory status.
What is the difference between NT5AD512M16C4-HRI and NT5AD512M16C4-HR?
The NT5AD512M16C4-HRI and NT5AD512M16C4-HR are both 8Gb DDR4 SDRAM devices from Nanya Technology with the same 512Mx16 organization and 96-pin TFBGA package. The key difference is the temperature grade: the 'I' suffix indicates industrial temperature range (0Β°C to +95Β°C), while the non-'I' version is commercial temperature (0Β°C to +85Β°C). They are otherwise pin-compatible and functionally equivalent.
What is the best drop-in replacement for NT5AD512M16C4-HRI?
The best drop-in replacement for NT5AD512M16C4-HRI is the NT5AD512M16C4-JRI from Nanya Technology, which shares the same 8Gb density, 512Mx16 organization, 96-pin TFBGA package, and industrial temperature grade. The 'J' speed grade offers a higher data rate (up to 3200 MT/s) compared to the 'H' grade (up to 2666 MT/s), but they are pin-compatible. Other cross-brand options include Micron's MT40A512M16TB-062E and Samsung's K4A8G165WC-BCWE, but verify pinout compatibility.
Can MT40A512M16TB-062E replace NT5AD512M16C4-HRI?
Yes, the Micron MT40A512M16TB-062E is a potential drop-in replacement for NT5AD512M16C4-HRI. Both are 8Gb DDR4 SDRAM with 512Mx16 organization and 96-ball TFBGA packages. However, the MT40A512M16TB-062E has a speed grade of 3200 MT/s (062E) and may have different timing parameters. Verify the pinout and timing compatibility with your design before substitution.
What are the key specifications of NT5AD512M16C4-HRI that engineers should know?
The NT5AD512M16C4-HRI is an 8Gb DDR4 SDRAM organized as 512Mx16, operating at 1.2V. It features a data rate of 3200 MT/s (H speed grade), CAS latency of 22, and industrial temperature range of 0Β°C to +95Β°C. The device includes auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic ODT, ZQ calibration, and CRC. It comes in a 96-pin TFBGA package.
What is the difference between NT5AD512M16C4-HRI and NT5AD512M16C4-JRI?
The NT5AD512M16C4-HRI and NT5AD512M16C4-JRI are both 8Gb DDR4 SDRAM from Nanya with 512Mx16 organization and 96-pin TFBGA packages. The main difference is the speed grade: the 'H' grade supports up to 2666 MT/s, while the 'J' grade supports up to 3200 MT/s. Both have industrial temperature range. They are pin-compatible, but the JRI offers higher performance.
Is NT5AD512M16C4-HRI suitable for industrial applications?
Yes, the NT5AD512M16C4-HRI is specifically designed for industrial applications with its industrial temperature grade of 0Β°C to +95Β°C. It includes features like auto self-refresh and a built-in temperature sensor that help maintain data integrity in varying thermal conditions. This makes it suitable for industrial controllers, embedded systems, and networking equipment operating in harsh environments.
Where can I download the NT5AD512M16C4-HRI datasheet PDF?
The NT5AD512M16C4-HRI datasheet PDF can be downloaded from several sources. The official Nanya Technology datasheet is available at datasheet.ersaelectronics.com (https://datasheet.ersaelectronics.com/static/datasheets/nanya-technology/nanya-technology-nt5ad512m16c4-hr.pdf). Additionally, distributor sites like LCSC, Arrow, and Win Source provide datasheet downloads on their product pages.
What is the package type of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI is housed in a 96-pin TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package is commonly used for DDR4 SDRAM due to its compact size and good thermal/electrical performance. The TFBGA package allows for high-density mounting on PCBs, making it suitable for space-constrained designs.
What is the best Samsung equivalent for NT5AD512M16C4-HRI?
A suitable Samsung equivalent for NT5AD512M16C4-HRI is the K4A8G165WC-BCWE, which is an 8Gb DDR4 SDRAM with 512Mx16 organization and a 96-ball FBGA package. It operates at 1.2V and supports data rates up to 3200 MT/s. However, verify the temperature grade and timing parameters to ensure compatibility with your application.

Engineering reference data for NT5AD512M16C4-HRI β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the NT5AD512M16C4-HRI when you need an 8Gb DDR4 SDRAM with industrial temperature range (0Β°C to +95Β°C) and high data rate (3200 MT/s). It is ideal for industrial controllers, embedded computing, and networking equipment operating in harsh environments. If you do not require the industrial temperature range, the NT5AD512M16C4-HR offers a lower-cost commercial temperature option. For higher performance, the NT5AD512M16C4-JRI provides the same industrial grade with a faster speed bin. Cross-brand alternatives like Micron's MT40A512M16TB-062E or Samsung's K4A8G165WC-BCWE can be considered if you need a second source, but verify pinout and timing compatibility. For automotive applications, consider AEC-Q100 qualified parts.

Comparison with Alternatives

Parameter This Product NT5AD512M16C4-JRI NT5AD512M16C4-HR MT40A512M16TB-062E K4A8G165WC-BCWE
Package 96-pin TFBGA 96-pin TFBGA 96-pin TFBGA 96-ball TFBGA 96-ball FBGA
Brand Nanya Technology Nanya Technology Nanya Technology Micron Technology Samsung Electronics
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Data Rate 3200 MT/s 3200 MT/s 2666 MT/s 3200 MT/s 3200 MT/s
Temperature Grade Industrial (0Β°C to +95Β°C) Industrial (0Β°C to +95Β°C) Commercial (0Β°C to +85Β°C) [DATA_NEEDED] [DATA_NEEDED]
CAS Latency 22 22 22 [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Industrial temperature grade (vs NT5AD512M16C4-HR)
  • Higher speed grade (vs NT5AD512M16C4-HR)
  • Same-brand drop-in compatibility (vs MT40A512M16TB-062E)

Design Notes

For DDR4 layouts, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command signals. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Ensure the ZQ pin has a 240-ohm resistor to ground with 1% tolerance. Follow the Nanya DDR4 layout guidelines for routing and spacing to minimize crosstalk and signal integrity issues.

The NT5AD512M16C4-HRI requires a 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with proper filtering to provide clean power. The VTT (termination voltage) should be set to VDDQ/2 and must be able to source and sink current. VREFCA and VREFDQ should be decoupled with 0.1uF capacitors. Ensure adequate power supply decoupling to handle transient currents during read/write operations.

The industrial temperature grade allows operation up to +95Β°C, but proper thermal management is still necessary. The TFBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED] Β°C/W. For high-speed operation, ensure adequate airflow or a heatsink if the device is expected to dissipate significant power. Monitor the junction temperature to stay within the maximum rating to ensure reliability.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance is indicated by the 'I' suffix in the part number, which typically denotes industrial temperature grade and lead-free finish. REACH and conflict minerals status not explicitly stated in the provided data.

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