NT5AD512M16C4-HRI vs NT5AD512M16C4-JR Comparison
Detailed side-by-side comparison of NT5AD512M16C4-HRI by Nanya Technology and NT5AD512M16C4-JR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-HRI
NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
NT5AD512M16C4-HRI β ActiveNanya Technology
NT5AD512M16C4-JR
NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
NT5AD512M16C4-JR β ActiveSpecification Comparison
| Parameter | NT5AD512M16C4-HRI | NT5AD512M16C4-JR |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.10 | $73.75 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x16 |
| Density | 8 Gbit | 8 Gbit |
| Supply Voltage | 1.2 V | β |
| Package | 96-pin TFBGA | TFBGA-96 |
| Temperature Grade | Industrial (0Β°C to +95Β°C) | β |
| Data Rate | 3200 MT/s (H speed grade) | 1.6 GHz (DDR4-3200) |
| CAS Latency | 22 | β |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Data Mask | Yes | Yes |
| Write Leveling | Yes | Yes |
| Dynamic On-Chip Termination | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | Yes |
| RoHS | Compliant | Compliant |
| Supply Voltage (VDD) | β | 1.2 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Standby Current | β | 0.023 A (max) |
| Number of Terminals | β | 96 |