NT5AD512M16C4-JR vs H5AN8G6NCJR-XXC Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JR by Nanya Technology and H5AN8G6NCJR-xxC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-JR
NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
NT5AD512M16C4-JR β ActiveSK hynix
H5AN8G6NCJR-xxC
H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-xxC β ActiveSpecification Comparison
| Parameter | NT5AD512M16C4-JR | H5AN8G6NCJR-xxC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $73.75 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x16 | 512M x 16 |
| Density | 8 Gbit | 8 Gb |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Data Rate | 1.6 GHz (DDR4-3200) | 2666 Mbps (VKC speed grade) |
| Package | TFBGA-96 | 96-ball FBGA |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Standby Current | 0.023 A (max) | β |
| Number of Terminals | 96 | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | Compliant |
| VPP Supply | β | 2.5 V |
| Operating Temperature (TC) | β | 0Β°C to 95Β°C |
| Number of Banks | β | 8 |
| Burst Length | β | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | β | Supported |
| Self-Refresh | β | Temperature-compensated (TCSR) |
| Lead-Free | β | Yes |
| Mounting Type | β | Surface Mount |