NT5AD512M16C4-JR vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of NT5AD512M16C4-JR by Nanya Technology and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16C4-JR

NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

NT5AD512M16C4-JR βœ“ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC βœ“ Active

Specification Comparison

Parameter NT5AD512M16C4-JR K4A8G165WB-BCRC
Brand Nanya Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $73.75 $12.57
Memory Type DDR4 SDRAM DDR4 SDRAM (DRAM, volatile)
Organization 512M x16 β€”
Density 8 Gbit β€”
Supply Voltage (VDD) 1.2 V β€”
Data Rate 1.6 GHz (DDR4-3200) 2400 Mbps (PC4-19200)
Package TFBGA-96 96-ball FBGA (PBGA96)
Operating Temperature Range 0Β°C to +95Β°C β€”
Standby Current 0.023 A (max) β€”
Number of Terminals 96 β€”
Auto Self-Refresh Yes β€”
Built-in Temperature Sensor Yes β€”
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
Data Mask Yes β€”
Write Leveling Yes β€”
Dynamic On-Chip Termination Yes β€”
ZQ Calibration Yes Yes
CRC Function Yes β€”
RoHS Compliant β€”
Memory Size β€” 8 Gb (1 GB)
Memory Organization β€” 512M x 16
Supply Voltage β€” 1.2 V (1.14 V to 1.26 V)
Technology β€” CMOS DRAM, Samsung 8Gb B-die
Ball Pitch β€” 0.8 mm
Mounting Type β€” Surface Mount
Operating Temperature β€” -40C to +95C
Interface β€” DDR4 (Double Data Rate, synchronous)
On-Die Termination β€” Yes (ODT with dynamic ODT)
CRC / CA Parity β€” Yes (CRC function)
Refresh β€” Auto-refresh and self-refresh
RoHS Status β€” Compliant

Datasheets & Resources

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