NT5AD512M16C4-JR vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JR by Nanya Technology and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-JR
NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
NT5AD512M16C4-JR β Active
Specification Comparison
| Parameter | NT5AD512M16C4-JR | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $73.75 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x16 | 512M x 16 |
| Density | 8 Gbit | β |
| Supply Voltage (VDD) | 1.2 V | β |
| Data Rate | 1.6 GHz (DDR4-3200) | 2666 Mbps/pin (PC4-2666) |
| Package | TFBGA-96 | 96-ball FBGA |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Standby Current | 0.023 A (max) | β |
| Number of Terminals | 96 | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | Yes |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | β |
| RoHS | Compliant | Compliant |
| Total Density | β | 8 Gb |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |