NT5AD512M16C4-JR vs MT40A512M16TB-062E:R Comparison

Detailed side-by-side comparison of NT5AD512M16C4-JR by Nanya Technology and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16C4-JR

NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

NT5AD512M16C4-JR βœ“ Active
Micron Technology
MT40A512M16TB-062E:R

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R βœ“ Active

Specification Comparison

Parameter NT5AD512M16C4-JR MT40A512M16TB-062E:R
Brand Nanya Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $73.75 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Organization 512M x16 β€”
Density 8 Gbit β€”
Supply Voltage (VDD) 1.2 V β€”
Data Rate 1.6 GHz (DDR4-3200) 3200 MT/s
Package TFBGA-96 96-FBGA (7.5x13 mm)
Operating Temperature Range 0Β°C to +95Β°C β€”
Standby Current 0.023 A (max) β€”
Number of Terminals 96 β€”
Auto Self-Refresh Yes β€”
Built-in Temperature Sensor Yes β€”
Auto Precharge Yes β€”
Asynchronous Reset Yes β€”
Data Mask Yes β€”
Write Leveling Yes β€”
Dynamic On-Chip Termination Yes β€”
ZQ Calibration Yes β€”
CRC Function Yes β€”
RoHS Compliant β€”
Memory Size β€” 8 Gbit (512M x 16)
Clock Frequency β€” 1600 MHz
CAS Latency β€” 22
Supply Voltage (VDD/VDDQ) β€” 1.2V Β±60mV
VPP Voltage β€” 2.5V (-125mV, +250mV)
Operating Temperature β€” 0Β°C to +95Β°C
Interface β€” Parallel
Data Bus Width β€” 16 bits
Refresh Time β€” 8192 cycles (64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C)
I/O Type β€” 1.2V pseudo open-drain
Features β€” Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration
RoHS Status β€” Compliant

Datasheets & Resources

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