NT5CB256M16CP-DII vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of NT5CB256M16CP-DII by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5CB256M16CP-DII | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.57 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | β |
| I/O Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | β |
| Data Rate | DDR3L-1600 (PC3L-12800) | 1866 Mbps/pin |
| CAS Latency | CL11 | [DATA_NEEDED: CAS Latency] |
| tCK (min) | 1.25 ns | β |
| Number of Banks | 8 | β |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Interface | SSTL-15 | β |
| Package | 96-ball FBGA (9mm x 13mm) | FBGA-96 |
| Operating Temperature Range | -40C to +95C (industrial) | β |
| Refresh Interval | 7.8us at 85C, 3.9us at 95C | β |
| RoHS | Compliant | Compliant |
| Supply Voltage | β | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | β | 933 MHz |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| Number of Pins | β | 96 |