NT5CC256M16ER-EKI vs K4B4G1646F-BYMA Comparison
Detailed side-by-side comparison of NT5CC256M16ER-EKI by Nanya Technology and K4B4G1646F-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646F-BYMA
K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646F-BYMA β ActiveSpecification Comparison
| Parameter | NT5CC256M16ER-EKI | K4B4G1646F-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.70 | $6.30 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5 V compatible) | β |
| Data Rate | 933 MHz (DDR3L-1866) | 1866 Mbps (PC3-14900) |
| Package | 96-ball TFBGA | 96-FBGA (Lead-Free & Halogen-Free) |
| Operating Temperature | -40Β°C to +95Β°C | -40Β°C to +95Β°C |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | β |
| Supply Voltage (VDD/VDDQ) | β | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) |
| CAS Latency | β | CL=13 (at 1.35V) |
| Burst Length | β | 8, 4 (with burst chop) |
| Interface | β | 16-bit I/O |
| Data Mask | β | Yes |
| Halogen-Free | β | Yes |