K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646F-BYMA β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.62 | $10.62 |
| 10 | $9.5 | $95.00 |
| 100 | $8.2 | $820.00 |
| 500 | $7.1 | $3,550.00 |
| 1,000 | $6.3 | $6,300.00 |
Drop-in alternatives for K4B4G1646F-BYMA β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4B4G1646E-BYMA
β Drop-Inβ 99,999 In Stock
$11.5 / Unit
View Datasheet βK4B4G1646D-BYMA
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646B-BYMA
β Drop-Inπ Reference alternative (not in catalog)
MT41K512M16HA-125
β Drop-Inπ Reference alternative (not in catalog)
H5TQ4G63CFR-PBC
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16HA-125
β Drop-Inβ 99,999 In Stock
$5.6 / Unit
View Datasheet βH5TQ4G63AFR
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646F-BYMA Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4 Gb |
| Organization | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) |
| Data Rate | 1866 Mbps (PC3-14900) |
| Package | 96-FBGA (Lead-Free & Halogen-Free) |
| Operating Temperature | -40Β°C to +95Β°C |
| CAS Latency | CL=13 (at 1.35V) |
| Burst Length | 8, 4 (with burst chop) |
| Interface | 16-bit I/O |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
| Halogen-Free | Yes |
K4B4G1646F-BYMA Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | VSS β Ground |
| Pin B1 | DQ1 β Data input/output 1 |
| Pin B2 | VDDQ β Power supply for output |
| Pin B3 | DQ2 β Data input/output 2 |
| Pin C1 | DQ3 β Data input/output 3 |
| Pin C2 | VSSQ β Ground for output |
| Pin C3 | DQ4 β Data input/output 4 |
| Pin D1 | DQ5 β Data input/output 5 |
| Pin D2 | VDD β Power supply |
| Pin D3 | DQ6 β Data input/output 6 |
| Pin E1 | DQ7 β Data input/output 7 |
| Pin E2 | VSS β Ground |
| Pin E3 | DQS0 β Data strobe 0 |
| Pin F1 | DQS0# β Data strobe 0 complement |
| Pin F2 | VDDQ β Power supply for output |
| Pin F3 | DM0 β Data mask 0 |
| Pin G1 | A0 β Address input 0 |
| Pin G2 | A1 β Address input 1 |
| Pin G3 | A2 β Address input 2 |
| Pin H1 | A3 β Address input 3 |
| Pin H2 | A4 β Address input 4 |
| Pin H3 | A5 β Address input 5 |
| Pin J1 | A6 β Address input 6 |
| Pin J2 | A7 β Address input 7 |
| Pin J3 | A8 β Address input 8 |
| Pin K1 | A9 β Address input 9 |
| Pin K2 | A10/AP β Address input 10 / auto precharge |
| Pin K3 | A11 β Address input 11 |
| Pin L1 | A12 β Address input 12 |
| Pin L2 | A13 β Address input 13 |
| Pin L3 | A14 β Address input 14 |
| Pin M1 | BA0 β Bank address 0 |
| Pin M2 | BA1 β Bank address 1 |
| Pin M3 | BA2 β Bank address 2 |
| Pin N1 | CK β Clock |
| Pin N2 | CK# β Clock complement |
| Pin N3 | CKE β Clock enable |
| Pin P1 | CS# β Chip select |
| Pin P2 | RAS# β Row address strobe |
| Pin P3 | CAS# β Column address strobe |
| Pin R1 | WE# β Write enable |
| Pin R2 | ODT β On-die termination |
| Pin R3 | RESET# β Reset |
| Pin T1 | ZQ β Calibration reference |
| Pin T2 | VDD β Power supply |
| Pin T3 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646F-BYMA is suitable for 6 applications: Laptop Memory, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers and Data Centers.
Laptop Memory
The K4B4G1646F-BYMA is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization allow for compact module designs. The wide temperature range (-40Β°C to +95Β°C) ensures reliable operation in portable devices exposed to varying environmental conditions. With data rates up to 1866 Mbps, it meets the performance demands of modern computing tasks, including multitasking and multimedia applications.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646F-BYMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1866 Mbps data rate supports high-throughput data processing, while the low 1.35V supply reduces heat generation in densely packed chassis. The FBGA-96 package allows for high-density PCB layouts, and the auto precharge and ZQ calibration features simplify system design. The industrial temperature range makes it suitable for outdoor and harsh environment networking gear.
Recommended
Industrial PCs
The K4B4G1646F-BYMA is well-suited for industrial PCs that require reliable operation in extreme temperatures. Its -40Β°C to +95Β°C operating range ensures functionality in factory floors and outdoor installations. The 1.35V operation reduces power consumption, which is critical for fanless designs. With 4Gb density, it provides ample memory for control algorithms and data logging. The device's compliance with JEDEC DDR3L standards ensures compatibility with standard industrial motherboards.
Recommended
Automotive Infotainment
For automotive infotainment systems, the K4B4G1646F-BYMA offers the performance and reliability needed for navigation, media playback, and connectivity. Its wide temperature range (-40Β°C to +95Β°C) meets AEC-Q100 Grade 3 requirements, ensuring operation in vehicle cabins. The low 1.35V supply reduces power draw from the vehicle's electrical system. The 1866 Mbps data rate supports smooth graphics and fast app loading. The FBGA-96 package is compact, fitting into space-constrained head units.
Recommended
Embedded Systems
The K4B4G1646F-BYMA is a versatile memory solution for embedded systems, including single-board computers and IoT gateways. Its low power consumption and wide temperature range make it suitable for battery-powered and outdoor deployments. The 256Mx16 organization provides a good balance of density and bus width for many applications. The device's support for DLL-enabled mode and on-die termination simplifies PCB design, reducing external components. With 1866 Mbps, it can handle data-intensive tasks like image processing and real-time analytics.
Recommended
Servers and Data Centers
In servers and data centers, the K4B4G1646F-BYMA can be used in memory modules for high-density computing. Its 4Gb density allows for large-capacity DIMMs, and the 1.35V operation reduces power consumption, lowering cooling costs. The 1866 Mbps data rate supports high-bandwidth applications such as virtualization and big data analytics. The device's reliability and long lifecycle make it suitable for enterprise environments where uptime is critical.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646F-BYMA β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646E-BYMA | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Micron | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| Lead-Free | Yes | Yes | Yes | Yes |
Key Differentiators
- Higher data rate (1866 Mbps) compared to K4B4G1646E-BYMA (vs K4B4G1646E-BYMA)
- Wider operating temperature range (-40Β°C to +95Β°C) vs Micron MT41K512M16HA-125 (vs MT41K512M16HA-125)
- Dual voltage support (1.35V and 1.5V) vs SK Hynix H5TQ4G63CFR-PBC (vs H5TQ4G63CFR-PBC)
Design Notes
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and address/control lines. Keep trace lengths matched within +/- 20 mils for data groups and within +/- 100 mils for address/control. Use a solid ground plane beneath the memory device and minimize vias to reduce signal integrity issues.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for calibration. Ensure the VREF voltage is generated accurately, typically at 0.5 * VDDQ.
The K4B4G1646F-BYMA operates up to +95Β°C, but for high-density modules, consider airflow and heat spreading. The FBGA package has a thermal resistance (theta_JA) of approximately 30Β°C/W. For industrial applications, ensure adequate cooling to keep the junction temperature within limits. Use thermal vias under the package if possible.
Compliance Information
Lead-free and halogen-free per datasheet. RoHS compliant per Samsung product page. AEC-Q100 not applicable as this is a memory IC, not an automotive-grade part.
