SSM3K35CT-L3F vs SSM3K35CT Comparison

Detailed side-by-side comparison of SSM3K35CT-L3F by Toshiba and SSM3K35CT by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter SSM3K35CT-L3F SSM3K35CT
Brand Toshiba Toshiba
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.09 $0.15
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (V(DSS)) 20 V —
Gate-Source Voltage (V(GSS)) ±10 V (per datasheet, [DATA_NEEDED: exact value]) —
Continuous Drain Current (I(D)) 0.18 A (180 mA) —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS = 2.5 V] —
Power Dissipation (P_D) 500 mW (Ta) / [DATA_NEEDED: Ta condition] —
Package SOT-883 (CST3), 3 pins SOT-883 (CST3), 3-pin leadless
Package Size 1.0 mm x 0.6 mm, max height 0.5 mm —
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: junction/storage temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Lead-Free Yes (L3F suffix) Yes
RoHS Status Compliant Compliant
Tape and Reel 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) —
Manufacturer Toshiba Electronic Devices & Storage Corporation —
MOSFET Mode — Enhancement
Drain-Source Breakdown Voltage (V(BR)DSS) — 20 V
Continuous Drain Current (ID) — 0.18 A
Drain-Source On-Resistance (RDS(on)) — 3.0 Ω at VGS = 4 V
Gate Threshold Voltage (Vth) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max gate-source voltage]
Power Dissipation (PD) — 100 mW (Ta)
Operating Temperature Range — [DATA_NEEDED: operating temperature range]
Package Outline Code — CST3 (Toshiba internal), 2-1J1B
MSL Level — [DATA_NEEDED: MSL moisture sensitivity level]
Application Category — High-Speed Switching / Analog Switches

Datasheets & Resources

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