SSM3K35CT-L3F vs SSM3K35CT Comparaison
Comparaison détaillée côte à côte de SSM3K35CT-L3F par Toshiba et SSM3K35CT par Toshiba. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | SSM3K35CT-L3F | SSM3K35CT |
|---|---|---|
| Marque | Toshiba | Toshiba |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,09 | $0,15 |
| Polarity | N-Channel | N-Channel |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (V(DSS)) | 20 V | — |
| Gate-Source Voltage (V(GSS)) | ±10 V (per datasheet, [DATA_NEEDED: exact value]) | — |
| Continuous Drain Current (I(D)) | 0.18 A (180 mA) | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] | — |
| Power Dissipation (P_D) | 500 mW (Ta) / [DATA_NEEDED: Ta condition] | — |
| Boîtier | SOT-883 (CST3), 3 pins | SOT-883 (CST3), 3-pin leadless |
| Package Size | 1.0 mm x 0.6 mm, max height 0.5 mm | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: junction/storage temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Lead-Free | Yes (L3F suffix) | Yes |
| Statut RoHS | Compliant | Compliant |
| Tape and Reel | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) | — |
| Manufacturer | Toshiba Electronic Devices & Storage Corporation | — |
| MOSFET Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 20 V |
| Continuous Drain Current (ID) | — | 0.18 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 Ω at VGS = 4 V |
| Gate Threshold Voltage (Vth) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max gate-source voltage] |
| Power Dissipation (PD) | — | 100 mW (Ta) |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Package Outline Code | — | CST3 (Toshiba internal), 2-1J1B |
| Niveau MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Application Category | — | High-Speed Switching / Analog Switches |