STB100N10F7 vs FDP100N10 Comparison

Detailed side-by-side comparison of STB100N10F7 by STMicroelectronics and FDP100N10 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STB100N10F7 STB100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics

STB100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics

STB100N10F7 βœ“ Active

Specification Comparison

Parameter STB100N10F7 FDP100N10
Brand STMicroelectronics onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $1.32
Technology N-Channel MOSFET PowerTrench MOSFET
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at 25Β°C 100 A β€”
Continuous Drain Current (ID) at 100Β°C 70 A β€”
Pulsed Drain Current (IDM) 400 A β€”
Gate-to-Source Voltage (VGS) Β±20 V β€”
On-State Resistance (RDS(on)) at VGS=10V 8.5 mΞ© (typ) β€”
Total Gate Charge (Qg) 110 nC β€”
Input Capacitance (Ciss) 4500 pF β€”
Output Capacitance (Coss) 700 pF β€”
Reverse Transfer Capacitance (Crss) 150 pF β€”
Avalanche Energy (EAS) 400 mJ β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package D2PAK (TO-263) TO-220-3 (TO-220AB)
Mounting Type Surface Mount Through Hole
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Polarity β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) β€” 75 A (Tc)
On-State Resistance (RDS(on) Max) β€” 10 mOhm
Power Dissipation (PD) β€” 208 W (Tc)
Gate-Source Voltage (VGS Max) β€” +/-20 V
Gate Threshold Voltage (VGS(th) Max) β€” 4.5 V @ 250 uA
Configuration β€” Single MOSFET
Product Series β€” PowerTrench
Avalanche Rated β€” Yes (100% avalanche tested)
Mounting Style β€” Through Hole / TO-220AB package
Manufacturer β€” Fairchild Semiconductor (onsemi)
Gate Charge (Qg) β€” [DATA_NEEDED: gate charge]

Datasheets & Resources

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