STB100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
MPN: STB100N10F7 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.28 | $228.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for STB100N10F7 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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Request AlternativesSTB100N10F7 Maximum Ratings & Electrical Characteristics
| Technology | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A |
| Continuous Drain Current (ID) at 100°C | 70 A |
| Pulsed Drain Current (IDM) | 400 A |
| Gate-to-Source Voltage (VGS) | ±20 V |
| On-State Resistance (RDS(on)) at VGS=10V | 8.5 mΩ (typ) |
| Total Gate Charge (Qg) | 110 nC |
| Input Capacitance (Ciss) | 4500 pF |
| Output Capacitance (Coss) | 700 pF |
| Reverse Transfer Capacitance (Crss) | 150 pF |
| Avalanche Energy (EAS) | 400 mJ |
| Operating Temperature Range | -55°C to +175°C |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STB100N10F7 Pin Configuration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the load |
| Pin 3 | Source — Source terminal, connected to ground |
| Pin 4 | Drain (tab) — Exposed pad, connected to drain |
Safe Operating Area
Typical Applications
STB100N10F7 is suitable for 6 applications: DC-DC Converters, Motor Control, Power Supplies, Automotive Systems, Battery Management Systems, Industrial Automation.
DC-DC Converters
The STB100N10F7 is ideal for DC-DC converter topologies such as buck, boost, and synchronous rectification. Its low RDS(on) of 8.5 mΩ minimizes conduction losses, improving efficiency in high-current applications. The fast switching speed, enabled by a total gate charge of 110 nC, allows operation at high frequencies, reducing the size of magnetic components. In a typical synchronous buck converter, the STB100N10F7 is used as the high-side and low-side switches, with the gate driven by a PWM controller. The device's avalanche rating of 400 mJ ensures robustness during load transients. For a 12V to 1.8V conversion at 50A, the power dissipation is approximately 21W, requiring adequate thermal management. Compared to IGBTs, the MOSFET offers faster switching and lower losses at high frequencies, making it the preferred choice for DC-DC conversion.
Recommended
Motor Control
The STB100N10F7 is well-suited for motor control applications, including brushless DC (BLDC) motors and brushed DC motors. Its high current rating of 100A enables driving motors with high stall currents, while the fast switching speed supports PWM frequencies up to 20 kHz. The device's avalanche energy rating of 400 mJ ensures reliable operation when switching inductive loads, such as motor windings. In a typical BLDC motor driver, three STB100N10F7 devices are used in a three-phase bridge configuration, with gate drivers providing the necessary voltage and current. The low RDS(on) reduces heat generation, allowing for compact heatsink designs. For a 48V, 10A motor, the conduction loss is approximately 0.85W per MOSFET, which is manageable with proper PCB layout. The device's wide operating temperature range (-55°C to +175°C) makes it suitable for automotive and industrial environments.
Recommended
Power Supplies
The STB100N10F7 is used in power supply designs, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low RDS(on) and fast switching characteristics make it ideal for the switching stage of SMPS, where efficiency is critical. In a typical 500W SMPS, the STB100N10F7 is used as the main switch in a flyback or forward converter topology. The device's avalanche rating ensures it can handle voltage spikes from the transformer's leakage inductance. The total gate charge of 110 nC allows for efficient gate drive, reducing switching losses. For a 400V DC bus, the 100V VDS rating is sufficient for the primary-side switch, while the high current rating supports the required output power. The D2PAK package provides good thermal performance, enabling operation at high power levels with proper heatsinking.
Recommended
Automotive Systems
The STB100N10F7 is designed for automotive applications, including electric power steering (EPS), battery management systems (BMS), and DC-DC converters for electric vehicles. Its high current rating and low RDS(on) make it suitable for high-power switching in these systems. The device's wide operating temperature range (-55°C to +175°C) ensures reliable operation in the harsh automotive environment. In an EPS system, the STB100N10F7 is used in the motor drive circuit, providing efficient control of the steering assist motor. The avalanche rating ensures robustness during load dumps and inductive switching. The device is AEC-Q101 qualified, meeting the stringent reliability requirements of the automotive industry. For a 12V battery system, the 100V VDS rating provides ample margin for voltage transients.
Recommended
Battery Management Systems
The STB100N10F7 is used in battery management systems (BMS) for electric vehicles and energy storage systems. It is employed in the charge/discharge path to control the flow of current to and from the battery pack. Its low RDS(on) minimizes power loss, improving overall system efficiency. The high current rating of 100A supports the high currents required for fast charging and discharging. The device's avalanche rating ensures it can handle voltage spikes during switching. In a typical BMS, the STB100N10F7 is used as a load switch, controlled by a battery management IC. The D2PAK package allows for efficient heat dissipation, which is critical in high-current applications. For a 48V, 100A battery system, the conduction loss is approximately 85W, requiring a robust thermal design.
Recommended
Industrial Automation
The STB100N10F7 is used in industrial automation equipment, including programmable logic controllers (PLCs), robotics, and factory automation. Its high current rating and fast switching speed make it suitable for driving solenoids, relays, and motors. The device's robustness, including its avalanche rating, ensures reliable operation in industrial environments with high electrical noise. In a typical PLC output module, the STB100N10F7 is used as a high-side switch to control loads such as actuators and indicators. The low RDS(on) reduces heat generation, allowing for compact module designs. The device's wide operating temperature range makes it suitable for use in unheated factory environments. For a 24V, 5A load, the conduction loss is approximately 0.21W, which is negligible.
Recommended
Recommended Products Summary
Engineering reference data for STB100N10F7 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STB100N10F7-1 | IRFB4110 | FDP100N10 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A | 100 A | 180 A | 100 A |
| On-State Resistance (RDS(on)) | 8.5 mΩ | 8.5 mΩ | 4.5 mΩ | 8.5 mΩ |
| Total Gate Charge (Qg) | 110 nC | 110 nC | 120 nC | 110 nC |
| Avalanche Energy (EAS) | 400 mJ | 400 mJ | 500 mJ | 400 mJ |
| Operating Temperature Range | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Key Differentiators
- Low on-state resistance of 8.5 mΩ (vs IRFB4110)
- Avalanche energy rating of 400 mJ (vs FDP100N10)
- D2PAK package for surface-mount assembly (vs STB100N10F7-1)
Design Notes
The STB100N10F7 in D2PAK package has a thermal resistance (theta_JA) of approximately 62°C/W. At 100A and RDS(on) of 8.5 mΩ, the conduction loss is 85W, which would cause a junction temperature rise of 5270°C without proper heatsinking. A heatsink or large copper area (at least 2 square inches) is required for any continuous operation above 10A. Use the exposed pad with multiple vias to the ground plane for effective heat dissipation.
For high-current paths, use wide and short traces to minimize parasitic resistance and inductance. The drain and source traces should be at least 0.5 inches wide for 100A operation. Place the gate driver as close as possible to the gate pin to reduce gate loop inductance. Use a 10Ω gate resistor to dampen ringing and reduce EMI. Ensure the source connection to the ground plane is low-impedance to avoid ground bounce.
Do not exceed the maximum gate-to-source voltage of ±20V, as this can damage the oxide layer. Ensure the gate drive voltage is at least 10V to achieve the specified RDS(on). When switching inductive loads, the avalanche rating of 400 mJ must not be exceeded; use a snubber circuit or freewheeling diode to clamp voltage spikes. Also, be aware of the device's body diode, which has a reverse recovery time that may cause additional losses in synchronous rectification applications.
Compliance Information
RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified for automotive applications.