FDP100N10 - 100V N-Channel PowerTrench MOSFET | onsemi
MPN: FDP100N10 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.75 | $17.50 |
| 100 | $1.58 | $158.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.32 | $1,320.00 |
FDP100N10 Overview
A power MOSFET is a voltage-controlled semiconductor switch and rectifier that dominates the power transistor hierarchy for medium-voltage, high-current switching. Unlike bipolar junction transistors, MOSFETs require negligible steady-state gate current, switch in tens of nanoseconds, and combine fast switching with low conduction loss. In the power-management hierarchy, the FDP100N10 sits as a discrete power transistor feeding applications from AC-DC converters to motor drives.
Key features of the FDP100N10 include ultra-low 10 mOhm RDS(on) for minimal conduction loss, a 100 V breakdown rating for off-line and 48 V bus designs, 208 W power dissipation capability at Tc, and gate-source voltage limits of plus or minus 20 V. The threshold voltage is specified at 4.5 V maximum at 250 uA, allowing logic-friendly drive with standard gate-driver ICs.
Technically, the PowerTrench process uses a shielded-gate trench architecture that reduces specific on-resistance per unit area and moderates gate charge, directly lowering switching loss in high-frequency converters. This yields superior figure-of-merit (RDS(on) x Qg) versus older planar MOSFET technologies, which is critical for efficiency-targeted power stages.
Typical applications include switching applications such as AC-DC converters, LED lighting power supplies, DC-DC power stages, and motor control circuits where 100 V tolerance and low conduction loss are required.
Design consideration: the TO-220AB package is through-hole, so thermal design centers on the heatsink interface; ensure the mounting tab reaches safe junction temperatures and add a negative-voltage gate drive margin for hard-switching topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for FDP100N10 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with FDP100N10 (same form factor and footprint) β differing in Manufacturer, Package.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
FDP090N10
β Drop-Inπ Reference alternative (not in catalog)
IPP120N08S403AKSA1
β Drop-Inβ In Stock
$1.28 / Unit
View Datasheet βFDP100N10 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 75 A (Tc) |
| On-State Resistance (RDS(on) Max) | 10 mOhm |
| Power Dissipation (PD) | 208 W (Tc) |
| Gate-Source Voltage (VGS Max) | +/-20 V |
| Gate Threshold Voltage (VGS(th) Max) | 4.5 V @ 250 uA |
| Technology | PowerTrench MOSFET |
| Package | TO-220-3 (TO-220AB) |
| Mounting Type | Through Hole |
| Configuration | Single MOSFET |
| Product Series | PowerTrench |
| Avalanche Rated | Yes (100% avalanche tested) |
| Mounting Style | Through Hole / TO-220AB package |
| Manufacturer | Fairchild Semiconductor (onsemi) |
FDP100N10 Pin Configuration
| Pin 1 | G β Gate - control terminal for channel conduction |
| Pin 2 | D β Drain - connected to the metal mounting tab |
| Pin 3 | S β Source - return terminal for load current |
Safe Operating Area (TO-220AB, Tc=25C)
Typical Applications
FDP100N10 is suitable for 6 applications: AC-DC Converter Switching Stage, LED Lighting Power Supplies, DC-DC Converter Power Stage, Motor Control and Drive Circuits, Battery-Powered Inverters and 48V Systems, Switching Applications and General Power Control.
AC-DC Converter Switching Stage
The FDP100N10 fits AC-DC converter primary and secondary switching stages because its 100 V VDS rating safely absorbs rectified bus voltage plus ringing margin, while the 10 mOhm maximum RDS(on) keeps conduction loss low at multi-ampere loads. In a flyback or forward converter, the MOSFET is driven from the PWM controller through a gate resistor; the PowerTrench process's reduced gate charge shortens transition times, cutting switching loss at typical 65 kHz to 132 kHz operating frequencies. Estimated conduction loss at 10 A is only 1 W, allowing compact heatsinking on the TO-220AB tab.
Recommended
LED Lighting Power Supplies
LED drivers benefit directly from the FDP100N10's combination of 100 V off-state margin and ultra-low 10 mOhm on-resistance. Constant-current LED buck and boost converters repeatedly switch the inductor current at 10 A to 30 A levels, where conduction loss dominates; at 20 A the FDP100N10 dissipates an estimated 4 W conduction loss, and the through-hole TO-220AB tab attaches easily to luminaire heatsinks. Its 100% avalanche-tested construction also tolerates inductive kick from LED string wiring, improving field reliability in lighting installations.
Recommended
DC-DC Converter Power Stage
In 48 V bus to low-voltage point-of-load DC-DC converters, the FDP100N10 serves as a low-side synchronous rectifier or main switch. Its PowerTrench trench architecture balances RDS(on) against gate charge, giving designers flexibility to pick switching frequencies between 100 kHz and 300 kHz without excessive loss. The +/-20 V VGS rating permits negative gate drive for fast turn-off in bridge legs, reducing diode conduction time. Estimated conduction loss at 30 A is 9 W, so thermal spreading copper or a heatsink is recommended for continuous high-current operation.
Recommended
Motor Control and Drive Circuits
The FDP100N10's 75 A current capability at Tc and 100 V blocking make it suitable for brushed and brushless DC motor drive bridges on 24 V to 48 V rails, where stall and regenerative transients stress the switch. The low 10 mOhm RDS(on) limits heat in continuous torque operation, and the rugged avalanche capability absorbs inductive energy from motor windings during commutation. Designers should pair it with a gate driver providing adequate sink current, and use fast body-diode recovery behavior of the PowerTrench process to limit reverse-recovery loss in synchronous buck drive legs.
Recommended
Battery-Powered Inverters and 48V Systems
For telecom rectifiers, 48 V battery-backed inverters, and solar charge controllers, the FDP100N10 offers 100 V blocking with more than enough margin above a 60 V absorption-charge bus, plus low RDS(on) for high-efficiency power conversion. In H-bridge and push-pull stages, switching tens of amperes at 10 mOhm yields estimated conduction losses of only a few watts per device at 20 A, supporting compact passive cooling. The through-hole package also simplifies repair in serviceable industrial equipment, and the +/-20 V gate rating supports robust drive schemes for noisy environments.
Recommended
Switching Applications and General Power Control
As a general-purpose power switch, the FDP100N10 excels in load-switch, relay-replacement, heater-control, and capacitive-discharge circuits operating up to 100 V. Its low threshold (4.5 V max at 250 uA) allows direct drive from many controllers, though a dedicated gate driver is preferred for fast transitions. The 208 W (Tc) dissipation rating and 75 A capability give large design headroom for pulsed loads, and 100% avalanche testing provides robustness against unpredictable inductive events. Estimated pulsed operation at 75 A with 1% duty keeps average dissipation near 0.6 W, avoiding heatsinking in many cases.
Recommended
Recommended Products Summary
Engineering reference data for FDP100N10 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | FDP090N10 | IPP120N08S403AKSA1 |
|---|---|---|---|
| Package | TO-220-3 (TO-220AB) | TO-220-3 (TO-220AB) - same | TO-220-3 (TO-220AB) - same |
| Brand | onsemi | onsemi | Infineon |
| Drain-Source Voltage | 100 V | 100 V | 80 V |
| RDS(on) Max | 10 mOhm | approx 10 mOhm class | approx 4 mOhm |
| Technology | PowerTrench | PowerTrench | OptiMOS |
| Pinout | G-D-S (TO-220 standard) | G-D-S (TO-220 standard) - same | G-D-S (TO-220 standard) - same |
Key Differentiators
- Ultra-low conduction loss at 100 V class (vs FDP090N10)
- High voltage margin for 48-90 V buses (vs IPP120N08S403AKSA1)
- Through-hole TO-220AB serviceability (vs FDP090N10)
Design Notes
The 208 W dissipation rating applies at a case temperature held at 25 C, which is unrealistic in production hardware. Estimated sizing: at 20 A continuous, conduction loss is I^2 x RDS(on) = 20^2 x 0.010 = 4 W. With a typical junction-to-case resistance in the sub-1 C/W class plus heatsink interface, budget a heatsink or large thermal mass on the TO-220AB tab above roughly 3 W. Always derate for maximum ambient temperature and add switching losses for hard-switched converters.
Drive the gate with a dedicated driver rather than a bare GPIO: the FDP100N10 gate threshold is up to 4.5 V at 250 uA, so a 5 V logic drive may only partially enhance the channel and cause excessive RDS(on) heating. Use 10 V to 12 V gate drive for full enhancement, keep the gate resistor in the 4.7 to 22 Ohm range to damp ringing, and verify the +/-20 V VGS absolute maximum is never exceeded, especially in bridge legs with Miller-coupled transients.
The TO-220AB drain is the metal tab, so isolate the heatsink from grounded or live nodes with an insulating pad and shoulder washer, or float the heatsink. Keep the gate loop short and route the source return separately from high-current drain paths to avoid common-source inductance-induced false turn-on. For avalanche-exposed loads, add a snubber or TVS across the drain-source if bus transients approach the 100 V rating.
Compliance Information
Compliance data not stated in retrieved web data. Confirm RoHS/REACH status on the official onsemi product page for the specific ordering code.
