STW45NM60 vs STW45NM60-H Comparison

Detailed side-by-side comparison of STW45NM60 by STMicroelectronics and STW45NM60-H by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STW45NM60 STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics

STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics

STW45NM60 ✓ Active

Specification Comparison

Parameter STW45NM60 STW45NM60-H
Brand STMicroelectronics STMicroelectronics
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.78 $3.78
Technology MDmesh Power MOSFET MDmesh (super-junction)
Drain-Source Voltage (Vdss) 600 V —
Gate-Source Voltage (Vgs) [DATA_NEEDED: maximum Vgs rating] —
Continuous Drain Current (Id) at Tc=25°C 45 A —
Typical Rds(on) at Vgs=10V 90 mΩ —
Typical Rds(on) at Vgs=4.5V 110 mΩ —
Maximum Power Dissipation (Pd) at Tc=25°C 417 W —
Operating Temperature Range -65 °C to +150 °C (junction) -55 °C to +150 °C (TJ)
Package TO-247-3 (through-hole) TO-247-3 (through-hole)
Mounting Type Through Hole Through Hole
Channel Type N-Channel —
Configuration Single FET —
dv/dt Capability Outstanding (MDmesh process) High
Avalanche Ruggedness Excellent —
RoHS Status Compliant Compliant
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 600 V (650 V at TJMAX)
Continuous Drain Current (ID) — 45 A at Tc = 25 °C
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) — 417 W at Tc = 25 °C
On-Resistance (RDS(on)) — 0.09 Ω typical at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 4 V typical
Gate Charge (Qg) — [DATA_NEEDED: typical total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Avalanche Rating — 100% avalanche tested

Datasheets & Resources

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