TLP183(GB-TPL,E vs TLP183(GR) Comparison

Detailed side-by-side comparison of TLP183(GB-TPL,E by Toshiba and TLP183(GR) by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter TLP183(GB-TPL,E TLP183(GR)
Brand Toshiba Toshiba
Category Optocouplers Optocouplers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.09 $0.20
Product Type Phototransistor Output Optocoupler —
Number of Channels 1 1
Isolation Voltage (rms) 3750 Vrms —
Package 6-SOP (4-lead SO6), surface mount SO6 (4-pin surface mount)
CTR Rank GB (100% to 600% at IF=5 mA, VCE=5 V) —
Forward Current (IF) max 50 mA —
Reverse Voltage (VR) max 5 V —
Collector-Emitter Voltage (VCEO) max 80 V —
Emitter-Base Voltage (VEBO) max 7 V —
Collector Current (IC) max 50 mA —
Operating Temperature Range -55°C to +125°C —
Input LED Type GaAs infrared emitting diode —
Output Transistor Type Silicon NPN phototransistor —
Mounting Type Surface Mount (SMT) Surface Mount
Packaging Tape and Reel (TPL suffix) —
RoHS Status RoHS compatible Compliant
Applications PLC, AC Adapter, I/O Interface, Office Machine —
Output Type — Phototransistor (DC input, transistor output)
Isolation Voltage — 3750 Vrms (minimum)
Current Transfer Ratio (CTR) — 50% minimum @ IF=0.5 mA, VCE=5 V (GR bin: 100-300% @ IF=5 mA)
Collector-Emitter Voltage (Vceo) — 80 V minimum
Emitter-Collector Voltage (VECO) — 6 V minimum
Collector Current — 50 mA maximum
Forward Current (IF) — 50 mA maximum
Forward Voltage (VF) — [DATA_NEEDED: typical VF @ IF=10 mA]
Switching Time (tR, tF) — 2 us typical
Operating Temperature — -55C to +125C
MSL Level — [DATA_NEEDED: MSL rating]
CTR Bin — GR

Datasheets & Resources

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