W634GU6RB-09 vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of W634GU6RB-09 by Winbond and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | W634GU6RB-09 | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Winbond | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.69 | $6.55 |
| Memory Type | DDR3L SDRAM | DDR4 SDRAM |
| Memory Size | 4Gbit (512M x 8) | β |
| Supply Voltage | 1.35V | 1.2 V |
| Clock Frequency | 1.067 GHz | β |
| Data Rate | 2133 Mbps | 3200 Mbps |
| Access Time | 20 ns | β |
| Interface | Parallel | Parallel |
| Package | 96-VFBGA (7.5x13 mm) | 96FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40Β°C to 95Β°C | 0C to +85C |
| RoHS Status | Compliant | Compliant |
| Halogen Free | Yes | β |
| Organization | 512M x 8 | 512M x 16 |
| Terminal Pitch | [DATA_NEEDED: Terminal Pitch] | β |
| Number of Pins | 96 | β |
| Density | β | 8 Gb |
| Access Time (CAS Latency) | β | 19 ns |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| Lead Free | β | Yes |