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IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon IPD200N15N3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 trench technology, rated at 150 V VDS and 50 A continuous drain current (TC), with a maximum on-resistance of 20 mOhm and 150 W power dissipation in a surface-mount PG-TO252-3 (DPAK) package. The part delivers a 40% reduction in RDS(on) and a 45% improvement in figure of merit (FOM) versus the prior generation, enabling higher-efficiency switching designs in a compact footprint. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert energy in power electronics. N-channel MOSFETs are the dominant choice for low-side and high-side switching in DC-DC converters, motor drives, and load switches because their majority-carrier conduction yields lower conduction losses than equivalent bipolar transistors. The IPD200N15N3GATMA1 sits within the broader Infineon OptiMOS 3 family, which targets 100 V-300 V applications where low gate charge, low RDS(on), and robust avalanche capability are essential. Key features include a logic-level compatible gate threshold, integrated ESD protection on the gate, low Qg and Qgd for fast switching, and an optimized body diode for hard-commutated topologies. The 20 mOhm max RDS(on) at VGS=10 V and 150 V VDS rating provide substantial design margin for 48 V telecom, 80 V industrial bus, and battery protection applications. The device is rated for operation from -55 C to +175 C junction temperature, enabling deployment in harsh environments. The OptiMOS 3 process uses a trench gate structure that maximizes channel density per unit silicon area, balancing conduction and switching losses. Compared with planar MOSFETs of similar rating, the IPD200N15N3GATMA1 exhibits lower gate charge (Qg) and reduced output capacitance (Coss), making it suitable for high-frequency synchronous rectification in switched-mode power supplies where every switching cycle contributes to total loss. Typical applications include synchronous rectification in 48 V telecom DC-DC converters, hot-swap and OR-ing controllers in server power distribution, motor drive half-bridges in industrial automation, battery management protection FETs in 96 V e-mobility packs, and high-efficiency load switches in solar power optimizers. The DPAK package is also reflow-solder compatible with standard lead-free SMT processes. When designing with this part, pay attention to gate-drive voltage (10 V VGS recommended for full RDS(on) spec), keep the source lead parasitic inductance below 5 nH for clean switching waveforms, and verify that peak drain current at the operating temperature does not exceed the safe operating area. Use a gate-source resistor of 10-100 kOhm to prevent unwanted turn-on from dv/dt-induced Miller coupling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet, helping engineers move from component selection to validated BOM faster than scanning distributor catalogs alone.
IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon
The Infineon IPD22N08S2L50ATMA1 is a 75 V N-channel enhancement-mode logic-level power MOSFET from the OptiMOS family, housed in the industry-standard PG-TO252-3-11 (DPAK) surface-mount package. It is rated for 27 A continuous drain current at case temperature (Tc) and 75 W maximum power dissipation, with a drain-source on-resistance of 23 mOhm typical at 10 V VGS, making it one of the lowest-RDS(on) planar 75 V parts in its class. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source terminals. Logic-level MOSFETs such as the IPD22N08S2L50ATMA1 are designed to fully turn on with VGS as low as 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without gate-driver ICs. The OptiMOS family belongs to the broader hierarchy of N-channel power MOSFETs -> discrete semiconductors -> power management components used in modern switching applications. Key differentiating features of the IPD22N08S2L50ATMA1 include 100% avalanche-tested ruggedness, ultra-low on-resistance (world's lowest RDS(on) at 75 V in planar technology per Infineon), logic-level gate drive, and AEC-Q101 automotive qualification. The part is rated for operation up to 175 C junction temperature and supports MSL1 (Moisture Sensitivity Level 1) reflow up to 260 C peak, simplifying board assembly and reducing yield loss in volume production. Architecturally, the device uses Infineon's planar cell technology optimized for low conduction loss in 12 V and 24 V automotive systems. The low gate charge (Qg) and low figure-of-merit (FOM = RDS(on) x Qg) reduce switching losses at high frequencies, making it suitable for high-efficiency DC-DC converters and motor control applications where thermal management is critical. Typical applications include 12 V and 24 V automotive ECU loads, solenoid and valve drivers, LED lighting drivers, DC-DC converter primary-side switches, motor drive H-bridges, reverse-polarity protection circuits, and battery management switching. The AEC-Q101 qualification makes it a preferred choice for under-hood and chassis automotive electronics. When designing with this device, ensure the gate is driven with at least 4.5 V for full enhancement, place the gate series resistor close to the gate pin to limit ringing, and provide adequate copper area on the DPAK tab for heat dissipation. The exposed pad (drain) must be soldered to a sufficiently large copper pour to keep junction temperature below 175 C under worst-case load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent engineering perspective for component selection and BOM risk mitigation.
IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon
The Infineon IPD30N06S215ATMA2 is an N-channel enhancement-mode OptiMOS power MOSFET rated at 55 V drain-source voltage and 30 A continuous drain current (Tc), delivering up to 136 W of power dissipation in a surface-mount PG-TO252-3-11 (DPAK) package with an automotive AEC-Q101 qualification. It targets 12 V and 24 V automotive and industrial switching applications where ultra-low on-state resistance and 100% avalanche-tested ruggedness are required. What is an N-channel MOSFET? An N-channel MOSFET is a voltage-controlled majority-carrier device whose drain-source channel conducts electrons when a positive gate-source voltage exceeds the threshold. It belongs to the broader discrete semiconductor family: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> OptiMOS planar technology. Because electrons have higher mobility than holes, N-channel MOSFETs deliver lower on-resistance per unit silicon area than equivalent P-channel parts, making them the default choice for low-side and high-side switching in power conversion. Key differentiating features include ultra-low RDS(on) at 55 V in planar technology, 100% avalanche-tested ruggedness, MSL1 rating up to 260 C peak reflow, a 175 C maximum operating junction temperature, and a green lead-free PG-TO252-3-11 package. These characteristics position the part as one of the lowest-RDS(on) 55 V planar MOSFETs in its current class, supporting both cold-start and transient-load conditions typical of automotive environments. The IPD30N06S215ATMA2 is built on Infineon's planar OptiMOS process, which optimises cell pitch and die layout to minimize conduction losses at 55 V breakdown. The device uses standard gate-drive logic-level thresholds, allowing direct PWM control from microcontrollers, gate drivers, or dedicated automotive ECU outputs without intermediate level-shifting. Typical applications include 12 V/24 V automotive ECU switching, DC-DC converter high-side/low-side switches, motor drive H-bridges, solenoid and relay drivers, and reverse-polarity protection circuits. Industrial use cases include e-bike controllers, power tools, and LED driving stages where AEC-Q101 reliability is desired. When designing with this part, pay close attention to gate-drive voltage and PCB copper area for thermal dissipation. The DPAK tab functions as the drain terminal and must be soldered to a sufficient copper pour to keep junction temperature within the 175 C maximum. For switching applications above 50 kHz, verify gate-charge losses and reverse-recovery behaviour from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, helping engineers evaluate the IPD30N06S215ATMA2 alongside parametric equivalents for both automotive and industrial switching designs.
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
The Infineon IPD30N06S2L13ATMA4 is an N-channel enhancement-mode power MOSFET in the Infineon OptiMOS family, rated for 55 V drain-source voltage and 30 A continuous drain current (Tc), with 136 W maximum power dissipation in a surface-mount PG-TO252-3-11 (DPAK) package. As an AEC-Q101 qualified part it targets valve, solenoid, motor control, and 12 V/24 V automotive loads. Key features include ultra-low on-state resistance Rds(on) for the 55 V class, logic-level Vgs(th) operation, 175 °C maximum operating junction temperature, MSL1 moisture sensitivity up to 260 °C peak reflow, and 100 % avalanche-tested production per Infineon's planar technology. Green-package (lead-free) construction supports Pb-free reflow assembly. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently and quickly turn DC power on and off in switching converters, motor drives, and load-management circuits. MOSFETs belong to the discrete semiconductor family (transistors), and the N-channel enhancement-mode variant is the most common low-side or half-bridge switch in modern power electronics because electrons (the majority carrier) deliver higher mobility than holes, producing lower Rds(on) for a given die area. Logic-level MOSFETs such as the IPD30N06S2L-13 family extend that advantage down to 4.5 V gate drives typical of microcontrollers. This part's differentiator is its Rds(on) per package area in the 55 V class, enabling higher current handling or smaller PCB footprints than older planar MOSFETs. Logic-level Vgs(th) allows direct microcontroller GPIO drive, eliminating the need for a gate-driver IC in low-frequency switching applications. Automotive-grade AEC-Q101 qualification and 175 °C Tj(max) provide robustness under hood and industrial environments where parts must survive thermal cycling and transient over-voltages. The device is typically used as the low-side switch in 12 V/24 V automotive ECUs, H-bridge motor half-stages, solenoid and valve drivers, and DC-DC converter synchronous rectifiers. The 3-pin DPAK footprint with a large tab is the de-facto industry standard for medium-power surface-mount MOSFETs, and the part is supplied in 13-inch tape-and-reel for high-volume SMT lines. Designers should pay attention to gate-drive rise/fall times and dv/dt-induced turn-on; a small gate-source resistor (10-100 kΩ) is recommended to hold the device off during high dV/dt transients. Thermal design must keep Tj below 175 °C under worst-case SOA conditions, considering both DC steady-state and pulsed (single-pulse or 100 ms) operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPD30N08S2-22 - 75V 30A N-Ch OptiMOS DPAK | Infineon
The Infineon IPD30N08S2-22 is an N-channel enhancement-mode power MOSFET from the OptiMOS family, rated for 75V drain-source breakdown voltage and 30A continuous drain current with an ultra-low maximum on-state resistance of 21.5 mOhm at VGS=10V, in the PG-TO252-3-11 (DPAK-2) surface-mount package. A power MOSFET is a voltage-controlled field-effect transistor optimized for switching high currents at high efficiency. Within the power-semiconductor hierarchy (MOSFET -> discrete power transistor -> power management component), MOSFETs dominate low- and medium-voltage switching because of their fast switching speed, low gate drive power, and low conduction losses. Key features include AEC-Q101 automotive qualification, MSL1 rating up to 260C peak reflow, a -55C to +175C operating temperature range, 100% avalanche testing for robust unclamped inductive switching, and a green lead-free package. The ultra-low RDS(on) minimizes conduction losses (P = I2 x RDS(on)), while the logic-level gate threshold permits direct drive from 3.3V or 5V microcontrollers. The device uses Infineon planar technology, which the datasheet describes as delivering the world's lowest RDS(on) at 75V class in planar technology, combined with the highest current capability and the lowest switching and conduction power losses of its class. Optimized gate charge and output capacitance reduce switching losses in high-frequency converter topologies. Typical applications include automotive body control modules, electric power steering, DC-DC converters, motor drives, and load switches in 12V and 24V systems, where the 75V rating provides ample margin against load-dump transients. Design tip: ensure at least 10V of gate drive for full enhancement and provide generous copper area on the drain tab for thermal dissipation; derate current at high ambient temperatures.
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
The Infineon IPD30N08S2L21ATMA1 is an N-channel power MOSFET from the OptiMOS family rated at 75 V VDS, 30 A continuous drain current (Tc), 136 W power dissipation, and a logic-level gate drive threshold, housed in a surface-mount PG-TO252-3-11 (DPAK-2) package. The Infineon part number suffix "L21" designates a logic-level OptiMOS device with low gate charge and low on-state resistance optimized for high-frequency switching. A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conducting channel between source and drain. Power MOSFETs occupy the hierarchy: power MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. OptiMOS is Infineon's proprietary trench MOSFET platform designed to minimize conduction losses (low RDS(on)) and switching losses (low Qg, low Qgd) simultaneously. Logic-level variants ("L" series) accept 4.5 V gate drive from microcontrollers and gate drivers, simplifying gate-drive circuitry. Key specifications include a maximum drain-source voltage VDS of 75 V, continuous drain current ID of 30 A at case temperature Tc=25C, pulsed drain current limited by thermal and safe-operating constraints, and maximum on-state resistance RDS(on) on the order of 26 milliohms at VGS=10 V. The device supports a maximum junction temperature of 175C and is qualified to AEC-Q101 for automotive reliability. The DPAK-2 footprint provides a low thermal-resistance path from die to PCB copper drain tab, with RthJC below 1 C/W typical. The OptiMOS trench architecture achieves lower figure-of-merit (FOM = RDS(on) x Qg) than planar predecessors, enabling higher efficiency in switched-mode power supplies, motor drives, and DC-DC converters. The logic-level gate drive allows direct PWM control from 5 V microcontrollers or low-voltage gate drivers without level-shifting, reducing BOM cost in 12 V and 24 V automotive subsystems. AEC-Q101 qualification ensures reliability under thermal cycling, humidity, and vibration stresses required for under-hood and chassis-mounted electronics. Typical applications include 12 V and 24 V automotive load switching, electric power steering (EPS), transmission control units, body control modules, DC-DC converters, motor drives (HVAC blowers, water pumps, fuel pumps), and reverse-battery protection circuits. The device is also suitable for industrial switched-mode power supplies, solar micro-inverters, hot-swap controllers, and OR-ing FETs in redundant power architectures. When designing with this MOSFET, ensure the gate driver can source and sink peak currents required by Qg (approximately 56 nC). At 30 A continuous current the SOA curve must be observed; for pulsed loads consult the safe-operating-area graph in the manufacturer datasheet. The tab (drain) thermal pad requires substantial PCB copper area, typically 1 square inch minimum on FR-4 with 2 oz copper, to keep junction temperature below 150C at full load. This page synthesizes distributor pricing, automotive-grade same-family drop-in alternatives, and practical PCB thermal-design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for 75 V / 30 A N-channel MOSFET selection.
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
The Infineon IPD30N10S3L34ATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS-T2 family, rated at 100 V VDS, 30 A continuous drain current (Tc), and 57 W power dissipation (Tc), housed in a surface-mount PG-TO252-3-11 (DPAK-2) package with a 31 mΩ maximum on-resistance at 10 V gate drive. Designed for automotive applications, it combines low switching and conduction losses, a 180 A pulsed current capability, and 100% avalanche-rated ruggedness for high-reliability power conversion. The device is AEC-Q101 qualified and rated for operation at junction temperatures up to 175°C. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source terminals. Within the discrete-semiconductor hierarchy, the MOSFET sits below the thyristor and IGBT families as the dominant choice for high-frequency, medium-voltage switching. In power-management topologies it functions as the synchronous-rectifier or main switching element in DC-DC converters, motor drives, and load switches, where its low R<sub>DS(on)</sub> directly translates to lower conduction loss and higher system efficiency. Key specifications include a gate threshold voltage of 1.0 V to 2.5 V (typ 1.7 V), a total gate charge Qg of approximately 23 nC, and an ultra-low R<sub>DS(on)</sub> of 31 mΩ max at V<sub>GS</sub>=10 V. The TO-252 package provides an R<sub>thJC</sub> of approximately 2.1 K/W, enabling compact PCB designs without external heatsinking at moderate dissipation levels. The device is lead-free, halogen-free, and RoHS/REACH compliant, making it suitable for global automotive and industrial platforms. The IPD30N10S3L34ATMA1 is built on Infineon's proven OptiMOS planar cell technology, which optimizes the figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) to balance conduction and switching losses. Its intrinsic body diode and dv/dt ruggedness permit reliable operation in half-bridge and full-bridge topologies, while the low Qrr reverse-recovery charge reduces dead-time losses in synchronous rectification. Typical applications include 12 V / 24 V automotive load switching, DC-DC converter main and synchronous switches, motor-drive H-bridges (electric power steering, water pumps, fan control), and industrial SMPS. The 100 V rating also provides ample headroom for 48 V mild-hybrid auxiliary rails. For thermal design, the DPAK-3 (TO-252) tab is the main heat path and must be soldered to a copper pad of at least 25 mm² to keep junction temperature within SOA limits at full load. This page synthesizes distributor inventory, automotive-grade qualification status, drop-in alternatives, and PCB thermal guidance not found in the standalone Infineon datasheet PDF.
IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon
The Infineon IPD30N10S3L34ATMA2 is an N-channel OptiMOS power MOSFET rated for 100 V VDS and 30 A continuous drain current (Tc), housed in a 3-pin PG-TO252-3-11 (DPAK) surface-mount package. Built on Infineon's OptiMOS-T technology, it delivers a typical R_DS(on) of 31 mOhm at V_GS = 10 V and a maximum gate charge Qg of 31 nC, balancing conduction loss and switching speed for high-efficiency power conversion. The device is qualified to AEC-Q101 for automotive applications and is supplied on tape-and-reel with 2,500-piece reels. A power MOSFET is a voltage-controlled semiconductor switch used to modulate or switch DC loads in power electronics. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low on-state resistance per unit area, fast body diode, and low gate charge. Within the broader taxonomy, the IPD30N10S3L34ATMA2 belongs to the N-channel enhancement-mode power MOSFET family, which sits inside the discrete semiconductor hierarchy alongside IGBTs and BJTs. The PG-TO252-3-11 (DPAK) package category belongs to the surface-mount discrete family, descended from through-hole TO-220 / TO-247 packages. Key features include a maximum continuous drain current of 30 A at Tc, 57 W power dissipation (Tc), threshold voltage V_GS(th) of 2.4 V max, and an operating junction temperature range of -55 C to +175 C. The low 31 mOhm R_DS(on) at 10 V V_GS minimizes conduction losses in high-current paths, while the 31 nC total gate charge supports switching frequencies up to several hundred kHz. The combination of low Qg and low R_DS(on) yields an excellent Figure-of-Merit (FOM = R_DS(on) x Qg) for this voltage class. The device is fabricated using Infineon's OptiMOS-T trench process, which achieves very low specific on-resistance by minimizing cell pitch while preserving avalanche ruggedness. The intrinsic body diode is robust enough for hard-switching bridge topologies, with dv/dt capability suitable for motor-drive half-bridges. The DPAK package offers a low thermal resistance path through the drain tab, enabling direct PCB cooling when the copper pad area is sized appropriately. Typical applications include automotive 12 V / 24 V load switching, electric power steering (EPS), DC-DC converter high-side switches, motor drive H-bridges, solenoid and relay drivers, and battery management systems. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis electronics where reliability under thermal cycling and vibration is mandatory. When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement and minimal R_DS(on). The drain tab must be soldered to a copper pour sized to keep junction temperature below 150 C under worst-case load. Use a gate-source resistor of 10-100 kOhm to prevent unwanted turn-on from Miller-induced dv/dt coupling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer product page.
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
The Infineon IPD320N20N3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 process, rated for 200 V drain-source voltage, 34 A continuous drain current (Tc), and 136 W maximum power dissipation in a surface-mount PG-TO252-3 (DPAK) package. It delivers a maximum on-resistance of 32 mOhm at VGS = 10 V and an excellent gate charge x RDS(on) figure-of-merit (FOM) optimized for high-frequency switching. What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and they form the active switching element in synchronous rectifiers, DC-DC converters, motor drives, and uninterruptible power supplies. Within the broader taxonomy, MOSFET -> power semiconductor -> discrete semiconductor -> electronic component. Key differentiating features of this part include Infineon's OptiMOS 3 technology, which provides one of the lowest RDS(on) values in the 200 V class, a 175 C maximum operating junction temperature, Pb-free lead plating with full RoHS compliance, and qualification to JEDEC standards for target applications. The device is engineered for high-frequency switching and synchronous rectification in 48 V systems. Technically, the IPD320N20N3GATMA1 uses trench MOSFET technology with an advanced cell structure that minimizes conduction and switching losses simultaneously. The low FOM enables cooler operation, smaller magnetics in the surrounding converter, and higher system efficiency versus older planar MOSFET generations. Typical applications include synchronous rectification in 48 V telecom and server bus converters, DC-DC converters, uninterruptible power supplies (UPS), inverters for DC motor drives, and battery management systems in industrial, automotive, and computing segments. When designing with this part, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge Qg quickly. Keep the source-lead parasitic inductance minimal by using a short, wide PCB trace and a Kelvin-source footprint where available. This page synthesizes distributor pricing, same-family Infineon drop-in alternatives, and practical design notes drawn from the OptiMOS 3 application ecosystem, providing engineering context not found in the bare datasheet.
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
The Infineon IPD33CN10NGATMA1 is an N-channel 100V OptiMOS power MOSFET rated for 27A continuous drain current (Tc) and 58W power dissipation (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. This OptiMOS device is part of Infineon's 100V MOSFET family and is optimized for high-efficiency, high power-density switched-mode power supplies (SMPS). A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power electronics. Within the broader taxonomy, MOSFETs sit below discrete semiconductors, branch into N-channel and P-channel types, and subdivide into standard, logic-level, and specialized variants such as OptiMOS. MOSFETs are the workhorse of modern DC-DC converters, motor drives, and load switches, where they replace older bipolar technologies due to their higher switching speed, lower gate charge, and lower on-resistance per silicon area. Key electrical features include a 100V drain-source breakdown voltage (VDS), a typical on-resistance (RDS(on)) in the low milliohm range optimized for 10V gate drive, and a gate threshold voltage compatible with standard MOSFET driving schemes. The OptiMOS 100V technology reduces RDS(on) and figure of merit (FOM) by approximately 30% versus competing trench technologies, delivering both conduction and switching loss improvements in the same silicon footprint. The PG-TO252-3 (DPAK) surface-mount package offers a low thermal resistance path via its exposed tab, supporting the 58W (Tc) dissipation rating while enabling compact PCB layouts. The IPD33CN10NGATMA1 is typically deployed as the main switching element or synchronous rectifier in 48V telecom bricks, industrial DC-DC converters, motor drive H-bridges, and e-bike / e-scooter controllers. The 100V rating provides adequate margin for 48V nominal bus systems and standard 24V/36V industrial rails. Designers benefit from the part's low gate charge (Qg) and low output capacitance (Coss), which reduce driver losses and improve light-load efficiency. When designing with this part, attention to gate-drive voltage (10V VGS recommended for full RDS(on) benefit), PCB layout of the source tab as a thermal pad, and snubber design for inductive switching are critical. The exposed tab on the TO-252 package must be soldered to a sufficiently large copper pour to achieve the rated 58W dissipation; without adequate copper, derate aggressively. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Compared to DigiKey/Mouser product pages, we add parametric comparison tables and application-specific guidance for engineers evaluating this MOSFET.
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
The Infineon IPD35N10S3L26ATMA1 is an N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS-T technology, rated at 100 V VDS and 35 A continuous drain current in a surface-mount PG-TO252-3-11 (DPAK-2) package. It offers an ultra-low typical on-resistance of 26 mΩ at VGS=10 V, AEC-Q101 automotive qualification, 100% avalanche testing, and a continuous operating junction temperature up to 175°C. The OptiMOS-T process delivers an excellent Figure-of-Merit (RDS(on) × Qg) for high-efficiency switching. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate conduction between source and drain terminals. The MOSFET family sits inside the broader hierarchy of discrete semiconductors (transistors), which belong to the active-device branch of power electronics. N-channel enhancement-mode MOSFETs like the IPD35N10S3L26ATMA1 require a positive gate-source voltage to turn on, and are the dominant low-voltage switch topology for synchronous rectification, motor drive, and DC-DC conversion due to lower RDS(on) per die area than P-channel equivalents. Key features of the IPD35N10S3L26ATMA1 include a 100 V drain-source breakdown voltage (V(BR)DSS), 35 A continuous ID at TC=25°C, 180 A pulsed avalanche current rating, 71 W continuous power dissipation at TC=25°C, 175°C maximum operating junction temperature, MSL1 moisture sensitivity rating (260°C peak reflow compatible), and an intrinsically low gate charge for reduced driver losses. The device is fully RoHS compliant and built on a green (halogen-free) Infineon production line. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low-voltage, high-current applications. The trench gate geometry reduces cell pitch and on-resistance per unit silicon area while improving switching performance. Compared to planar MOSFETs of equivalent rating, OptiMOS-T parts typically exhibit 30-50% lower RDS(on), faster switching transitions, and better thermal behavior under repetitive avalanche stress. Typical applications include 48 V automotive DC-DC converters (e.g., mild-hybrid 48V mild-hybrid systems), electric power steering (EPS), braking systems, body and chassis ECUs, motor drive H-bridges, solenoid drivers, and high-current synchronous rectification in industrial SMPS. The 100 V rating provides ample margin for 48 V bus transients up to ~70 V spikes. Design consideration: the PG-TO252-3-11 (DPAK) thermal pad must be soldered to a copper pour of at least 1 square inch to keep RDS(on) rise under load manageable. For high-cycle avalanche applications, derate to 80% of ID_max and verify Tj under worst-case cooling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
Infineon Technologies IPD35N10S3L26ATMA2 is an N-channel OptiMOS-T power MOSFET rated at 100 V VDS, 35 A continuous drain current (Tc), and 24 mOhm maximum R<sub>DS(on)</sub>, housed in a 3-pin (2 + tab) PG-TO252-3-11 (DPAK) surface-mount package and qualified to AEC-Q101 for automotive use. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conducting channel between drain and source, enabling efficient high-current switching in power conversion circuits. Within the broader taxonomy it sits between discrete MOSFETs and the wider power-semiconductor family, which also includes IGBTs, thyristors, and wide-bandgap GaN/SiC FETs. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low on-resistance per unit silicon area, giving high current density in compact packages. Key specifications include 71 W maximum power dissipation (Tc), a gate threshold VGS(th) typically in the 2.1 V to 3.5 V range, an avalanche-rated single-pulse drain current supporting unclamped inductive switching, and 100% Rg-tested production parts for paralleling reliability. The PG-TO252-3-11 DPAK footprint provides a low thermal-resistance path through the exposed tab, simplifying PCB heatsinking via copper pour. Typical applications include 48 V automotive converters (e.g., mild-hybrid DC-DC and e-fuse blocks), automotive electric power steering and braking drivers, motor-drive H-bridges, solenoid and relay switching, and industrial synchronous-rectification stages up to 100 V rails. Design considerations include keeping the gate-drive loop tight to minimize ringing, sizing the tab copper pour for the application's continuous Id, and confirming avalanche energy EAS for unclamped turn-off events. Compared with non-automotive MOSFETs in the same DPAK footprint, the IPD35N10S3L26ATMA2 adds AEC-Q101 screening for OEM automotive programs. This page synthesizes distributor pricing, AEC-Q101 cross-reference guidance, and PCB thermal-design notes that supplement the manufacturer datasheet, enabling a faster sourcing and design-in decision for 48 V and 100 V automotive power stages.
IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon
The Infineon IPD380P06NMATMA1 is a 60 V P-channel OptiMOS power MOSFET housed in a surface-mount PG-TO252-3 (DPAK) package, rated for 35 A continuous drain current (Tc) and 125 W power dissipation (Tc). Built on Infineon's OptiMOS P-channel trench technology, it is engineered for medium- and low-power switching where P-channel simplicity (high-side or reverse-polarity) reduces drive complexity versus N-channel alternatives. A P-channel MOSFET (PMOS) is a voltage-controlled majority-carrier device in which the drain-source channel consists of p-type carriers. When the gate is pulled below the source by a sufficient negative Vgs, the channel conducts; returning the gate to the source potential (or higher) turns the device off. PMOS devices sit in the same transistor taxonomy as N-channel MOSFETs (NMOS) and junction FETs (JFET), but their inherent source-following nature makes them especially attractive for high-side load switching, reverse-polarity protection (RPP), and battery management where the system ground is shared. The P-channel OptiMOS family from Infineon targets 40 V to 100 V applications, reducing design complexity versus discrete N-channel + charge-pump solutions. Key specifications include a 60 V drain-source breakdown (V(BR)DSS), 35 A continuous Id at 25 C case, low on-resistance that simplifies thermal budgets at moderate loads, logic-level gate compatibility, and fast switching for PWM and high-frequency load-shedding. The trench-cell architecture reduces both R_DS(on) and gate charge (Qg), improving conduction and switching efficiency simultaneously. Avalanche ruggedness is rated per the manufacturer datasheet, making the part suitable for inductive load dump on automotive 12 V/24 V buses. The PG-TO252-3 (DPAK) footprint uses a large exposed tab that doubles as the drain terminal and a thermal dissipation path. With proper PCB copper-pour sizing (typically 1-2 square inches of 2 oz copper), the part can sustain significant continuous current without external heatsinking. Internal construction uses a wire-bond-free or optimized-bond layout that lowers package parasitals versus legacy DPAK generations. Typical applications include reverse-polarity protection in 12 V/24 V automotive systems, high-side load switches for body-control modules (BCM), battery management systems (BMS) charge/discharge paths, DC-DC converter high-side switches, motor drive H-bridges, hot-swap / inrush limiting, and USB-PD / power-mux rails. The 60 V rating provides ample headroom above the 24 V automotive transient envelope (ISO 7637-2 pulses) while remaining cost-effective. When designing in this part, ensure adequate Vgs drive (typically -10 V for lowest R_DS(on), with -4.5 V acceptable at logic-level gate), minimize gate-loop inductance to control dV/dt ringing, and verify SOA against worst-case Vds and Id combinations including avalanche energy during inductive turn-off.
IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon
The Infineon IPD50N03S4L06ATMA1 is an N-channel enhancement-mode automotive power MOSFET rated at 30 V drain-source voltage, 50 A continuous drain current (Tc), and 5.5 mOhm maximum R_DS(on) at V_GS = 10 V, housed in a 3-pin (2 + tab) surface-mount PG-TO252-3-11 / DPAK package. Built on Infineon's OptiMOS process family, it combines very low on-state resistance with low switching losses, giving high thermal efficiency in compact automotive layouts. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify power in electronic circuits. The N-channel enhancement-mode family sits within the broader power MOSFET taxonomy (power MOSFET -> discrete semiconductor -> transistor -> semiconductor), and the DPAK/TO-252 surface-mount package belongs to the SMD transistor package family used for high-current low-voltage switching. Key specifications include a maximum R_DS(on) of 5.5 mOhm at V_GS = 10 V, total gate charge of 31 nC, input capacitance of 2.33 nF, output capacitance of 600 pF, and reverse transfer capacitance of 34 pF. The gate threshold voltage is 2.2 V (typ), the part dissipates up to 56 W at Tc = 25 C, and it operates across -55 C to +175 C junction temperature. It is 100% avalanche-tested, MSL1 rated to 260 C peak reflow, and qualified to AEC-Q101 for automotive reliability. The OptiMOS silicon uses a trench-gate structure that minimizes cell pitch and on-resistance per unit area while keeping the gate charge low. A monolithic body diode supports inductive switching, and the low R_DS(on) directly reduces conduction losses in high-current paths, allowing smaller PCB copper areas for the same thermal budget. Typical applications include automotive 12 V motor control (e.g., fuel pumps, HVAC blowers, electric water pumps), electronic power steering, transmission control units, body and chassis ECUs, and high-current DC-DC converter switching stages. AEC-Q101 qualification makes it drop-in suitable for under-hood and other automotive harsh-environment designs. A key design consideration is that switching performance depends strongly on gate-drive voltage - drive this part with at least 10 V V_GS to achieve the datasheet 5.5 mOhm R_DS(on), and place the gate resistor close to the gate pin to control ringing. For high-side use, verify that the bootstrap or charge-pump supply can deliver the 31 nC total gate charge at the required PWM frequency. This page synthesizes distributor pricing, drop-in automotive MOSFET alternatives, and practical layout/thermal notes that go beyond the manufacturer datasheet's headline curves.
IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
The Infineon IPD50N04S408ATMA1 is an N-channel enhancement-mode OptiMOS-T2 power MOSFET rated at 40 V drain-source voltage and 50 A continuous drain current (Tc), dissipating up to 46 W in a surface-mount PG-TO252-3-313 (DPAK) package. As an automotive-grade OptiMOS-T2 device, it is AEC-Q101 qualified, MSL1 rated to 260 °C peak reflow, and 100 % avalanche tested, making it suitable for harsh electrical environments. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for high-efficiency power conversion. The IPD50N04S408ATMA1 belongs to the Infineon OptiMOS-T2 40 V family, which sits within the broader class of trench MOSFETs optimized for low on-state resistance per unit silicon area. Compared with older planar MOSFET generations, OptiMOS-T2 lowers R DS(on) by roughly 50 % at the same die size, improving conduction efficiency in synchronous rectification and high-current load-switch applications. Key differentiating specifications include a very low on-state resistance (typical R DS(on) in the single-digit milliohm range at V GS = 10 V), a logic-level-compatible gate threshold around 1.7 V typical, and integrated ESD protection. The PG-TO252-3-313 package provides a low thermal-resistance path through the drain tab, enabling continuous high-current operation with a standard PCB footprint that is pin-compatible with most industry DPAK MOSFETs. The device uses Infineon's advanced trench-cell OptiMOS-T2 process technology, which minimizes both switching and conduction power losses for highest thermal efficiency. The robust cell design combined with the exposed metal drain tab supports superior quality and reliability in automotive power-train, body-electronics, and industrial load-switch topologies. Typical applications include automotive 12 V load switching, DC-DC converter synchronous rectification, motor drive H-bridges, solenoid driving, and battery protection circuits. The 40 V drain-source rating provides ample margin above the 12 V automotive bus and 24 V industrial bus, accommodating inductive transients and ring-voltage spikes. When designing with this MOSFET, ensure the gate-drive voltage swings fully to 10 V for the lowest R DS(on), and use a gate-source resistor of 10 kΩ or less to prevent inadvertent turn-on from leakage currents. The drain tab should be soldered to at least 1 cm² of copper pour to keep junction temperature within safe limits at full load.
IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
The Infineon IPD50N06S409ATMA2 is an N-channel OptiMOS power MOSFET rated at 60 V VDS, 50 A continuous drain current (Tc), and 9 mΩ maximum R<sub>DS(on)</sub> at VGS=10 V, housed in a surface-mount PG-TO252-3-11 (DPAK) package with automotive AEC-Q101 qualification. The part is engineered for high-current switching in automotive 12 V / 24 V systems where low conduction loss, robust avalanche capability, and small footprint are required. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between source and drain. N-channel MOSFETs like this Infineon OptiMOS device offer lower on-resistance per unit silicon area than equivalent P-channel devices because electrons have higher mobility than holes. Within the broader taxonomy, a discrete MOSFET sits under discrete semiconductors → transistors → power transistors → power MOSFETs → N-channel power MOSFETs. The OptiMOS family from Infineon targets automotive, industrial, and computing power conversion with a strong focus on switching loss reduction. Key features include a maximum drain-source on-resistance of 9 mΩ at VGS=10 V, low gate charge Qg for fast switching, integrated body diode for inductive load commutation, and an operating junction temperature range from -55 °C to +175 °C. The AEC-Q101 automotive qualification supports under-hood and chassis deployment where extended thermal and vibration stress are present. The PG-TO252-3-11 (DPAK) surface-mount package provides a low thermal resistance path through the tab to the PCB copper pour. In typical applications, the IPD50N06S409ATMA2 is used as the high-side or low-side switch in solenoid drivers, valve controllers, LED lighting drivers, motor pre-drivers, and DC-DC converter primary-side switches. The 60 V rating provides ample headroom above 24 V automotive transients while keeping R<sub>DS(on)</sub> low. A trade-off note: at high switching frequencies the gate charge losses can dominate, so a driver with sufficient peak current (typically 1 A or more) is recommended to keep rise/fall times short and limit ringing on the gate-source loop.
IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
The Infineon IPD50N10S3L16ATMA1 is a 100 V N-channel OptiMOS-T power MOSFET delivering 50 A continuous drain current (Tc) and 100 W power dissipation in a surface-mount PG-TO252-3-11 (DPAK) package. Per the Infineon product page and DigiKey listing, it offers 15 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V and is qualified to AEC-Q101 for automotive 48 V inverter and motor-drive environments. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device whose channel conductance is modulated by the gate-source voltage. Within the broader hierarchy: MOSFET → transistor → discrete semiconductor → semiconductor. OptiMOS-T is Infineon's trench-technology power MOSFET family optimized for low R<sub>DS(on)</sub> per die area, low gate charge, and high avalanche ruggedness, making it the workhorse of automotive and industrial switched-mode power stages. Key features of the IPD50N10S3L16ATMA1 include a maximum drain-source voltage V<sub>DS</sub>=100 V, continuous drain current I<sub>D</sub>=50 A at T<sub>C</sub>=25 °C, pulsed current capability up to 200 A, and gate threshold V<sub>GS(th)</sub>=2.5 V typical. The DPAK (PG-TO252-3-11) package provides low thermal resistance with a tab that doubles as the drain connection, enabling direct PCB copper heatsinking. The device uses Infineon's third-generation OptiMOS-T3 trench process, which significantly reduces on-resistance per unit area and lowers gate charge Q<sub>G</sub> compared to planar MOSFETs of the same voltage class. This combination delivers high efficiency at high switching frequencies, reduced driver losses, and good EMI behavior in hard-switched topologies such as synchronous buck converters and half-bridges. Typical applications include automotive 48 V mild-hybrid inverter stages, DC-DC converters, motor control H-bridges, battery protection circuits, and high-current load switching. The part is also commonly used in industrial switched-mode power supplies, solenoid drivers, and Class-D audio amplifiers where low R<sub>DS(on)</sub> minimizes conduction loss. When designing with this MOSFET, place the gate-driver as close as possible to the gate pin to limit parasitic inductance, and use a Kelvin-source connection if available in the gate-driver layout. The DPAK tab is electrically the drain — isolation from the heatsink may be required depending on circuit topology. This page synthesizes distributor stock, drop-in alternatives, parametric comparisons, and practical design notes beyond the manufacturer datasheet summary.
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
The Infineon IPD50N10S3L16ATMA2 is an N-channel OptiMOS-T power MOSFET rated at 100 V drain-source voltage, 50 A continuous drain current (Tc) and 100 W power dissipation, housed in a surface-mount PG-TO252-3-11 (DPAK) package. The part belongs to Infineon's automotive-grade OptiMOS-T 100 V platform and is qualified to AEC-Q101, with a maximum on-state resistance of 15 mΩ. It is supplied on tape and reel and is intended for high-current switching in 48 V automotive systems as well as industrial power conversion. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that uses an isolated gate to modulate the conductivity of a semiconductor channel between the drain and source terminals. MOSFETs sit in the broader power-semiconductor taxonomy alongside IGBTs and thyristors and are the dominant switching element in DC-DC converters, motor drives, and load switches below 600 V. The OptiMOS-T family from Infineon is optimized for low on-state resistance per unit silicon area, which directly reduces conduction loss and improves overall system efficiency. Key features of this device include a 100 V VDS rating that comfortably supports 48 V automotive bus systems (including load-dump transients), a maximum R_DS(on) of 15 mΩ at VGS = 10 V, and a typical continuous drain current of 50 A at Tc = 25 °C. The DPAK (TO-252) package provides a low thermal resistance path through the tab to the PCB copper, while the automotive qualification (AEC-Q101) makes the part suitable for under-hood and chassis electronics. An integrated gate-protection Zener (implied by the S3L designation family) improves ESD robustness. In architecture terms, the device uses Infineon's trench-cell OptiMOS-T technology, which shrinks the cell pitch versus planar MOSFETs to lower R_DS(on) * A figure of merit. This results in lower conduction loss per switching cycle, allowing designers to either shrink heatsink size or push switching frequency higher in SMPS designs. Typical applications include 48 V automotive load switches, DC-DC converters, motor control H-bridges, reverse-polarity protection, and high-current solenoid drivers. The part is also widely used in industrial relay replacement, battery management, and synchronous rectification. When designing with this device, ensure the gate-source drive voltage is firmly above 10 V (VGS(th) typically 2.5 V) to reach the datasheet R_DS(on) figure, and respect the SOA envelope at high VDS and low duty cycles. Always check avalanche energy rating (EAS) when driving inductive loads. This page synthesizes distributor pricing, AEC-Q101 qualification notes, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPD50P03P4L11ATMA2 - 30V P-Ch 50A 10.5mΩ OptiMOS | Infineon
The Infineon IPD50P03P4L11ATMA2 is an automotive-grade P-channel power MOSFET built on Infineon's OptiMOS™-P2 technology, rated for -30 V VDS and continuous drain current of 50 A at TC, with a typical on-state resistance of 10.5 mΩ, packaged in the surface-mount PG-TO252-3-11 (DPAK) outline. The OptiMOS-P2 process combines a P-channel trench cell with low gate charge and logic-level VGS(th) to deliver low conduction loss in high-side load-switch and reverse-battery-protection topologies. A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by positively charged carriers (holes) between two P-doped regions, controlled by a negatively biased gate. The 'P-channel' designation places it in the broader transistor taxonomy: MOSFET → FET → discrete semiconductor → power semiconductor. Because P-channel devices can be placed on the high side of a load without a charge pump or bootstrap circuit, they are favored for low-voltage (12 V/24 V) automotive reverse-battery-protection blocks, high-side load switches, and OR-ing controllers where simpler gate drive is a design priority. Key specifications include a maximum drain-source voltage of 30 V, continuous ID of 50 A at TC, pulsed avalanche rating per Infineon's 100% avalanche-tested qualification, and a logic-level gate threshold that allows direct 3.3 V or 5 V microcontroller drive. The PG-TO252-3-11 (DPAK) package provides an exposed thermal pad with low thermal resistance, enabling sustained high-current switching on FR-4 PCB copper without an external heatsink at moderate duty cycles. Internally, the OptiMOS-P2 cell structure reduces figure-of-merit RDS(on) × QG versus earlier P-channel generations, lowering both conduction and switching losses. This architecture is particularly advantageous when the MOSFET is used as a fully-on reverse-polarity protection element, where minimizing DC loss is the dominant design constraint. The combination of low RDS(on), logic-level VGS(th), and a thermally enhanced DPAK footprint suits harsh under-hood automotive environments. Typical applications include automotive reverse-battery protection, high-side load switches for ECU power distribution, USB Type-C power-rail switching, hot-swap controllers in 12 V industrial systems, and motor brake / H-bridge low-side switches in small BLDC drivers. In each case, the P-channel device replaces an N-channel + charge-pump combination, simplifying the gate-drive circuit and reducing BOM count. When designing with this part, pay attention to the VGS drive level versus the published R_DS(on) curve — full enhancement at VGS = -10 V delivers the lowest resistance, but logic-level drive at -4.5 V is adequate for most load-switch applications. Always verify safe operating area (SOA) for short-circuit or inrush conditions, and provide sufficient copper area on the DPAK tab to keep junction temperature below the 175 °C maximum. This page consolidates distributor pricing, drop-in alternatives, and practical design notes that are not aggregated on the manufacturer datasheet.
IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
The Infineon IPD50P04P413ATMA2 is a P-channel Power-MOSFET built on Infineon's OptiMOS-P2 technology, rated at -40 V VDS, 50 A continuous drain current (TC), and 58 W power dissipation in a PG-TO252-3-313 (DPAK) surface-mount package. Key headline parameters include an ultra-low typical on-state resistance of 9.2 mΩ at VGS = -10 V and a maximum junction temperature of 175 °C. The device is qualified for automotive use per AEC-Q101 and is supplied on 13-inch Tape & Reel with 2500-piece standard pack. A P-channel MOSFET (P-FET) is a voltage-controlled majority-carrier device in which the channel is formed by holes rather than electrons. Placed in the upper (high-side) position of a load circuit, a P-FET allows the load to be switched and protected with a low-side gate-drive referenced to ground - simplifying bootstrap and charge-pump design in half-bridges, motor drives, and reverse-polarity protection blocks. P-channel MOSFETs are widely used in 12 V/24 V automotive systems where N-channel drivers would otherwise require a charge pump or bootstrap diode for high-side switching. Key features include an extended VDS range to -40 V (well above the 12 V/24 V automotive bus rails, with significant transient headroom for load-dump and jump-start events), an Rthson of 9.2 mΩ at VGS = -10 V that minimizes conduction loss, and an avalanche-rated single-pulse body diode for unclamped inductive switching. The OptiMOS-P2 cell shrinks die area, on-resistance, and gate charge (Qg) for the same Rds(on), which directly reduces both conduction loss and switching loss in PWM applications. Architecturally, the device uses a trench-gate structure with optimized P-body and source-field-plate geometry to balance Rds(on), Qg, Qgd, and dv/dt immunity. The TO-252-3 (DPAK) package with a copper tab provides a thermal resistance of approximately 40 °C/W (junction-to-ambient on a 1 oz 1-in² copper pad, JEDEC EIA/JESD51), sufficient for several watts of dissipation with proper PCB layout. Typical applications include high-side load switches in automotive body and lighting ECUs, reverse-polarity / reverse-battery protection, motor-drive half-bridges for HVAC blowers and seat adjusters, USB and infotainment power rails, and 24 V truck and bus systems. For 12 V rails the device is typically driven directly by a microcontroller GPIO through a small gate resistor, while 24 V systems often use a gate-source Zener clamp to hold VGS within its ±20 V absolute-maximum rating. When designing with this part, pay attention to gate-drive voltage: the device is fully enhanced only at VGS = -10 V, and at VGS = -4.5 V the Rds(on) roughly doubles. Always include a gate-source pull-down resistor (typ. 100 kΩ) to keep the device off when the driver is in high-impedance state, and respect the pulsed drain-current SOA when switching capacitive loads.
IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon
The Infineon IPD50P04P4L11ATMA2 is a P-channel enhancement-mode power MOSFET rated for -40 V VDS and -50 A continuous drain current (TC), housed in a 3-pin PG-TO252-3-313 (DPAK) surface-mount package. It features a typical on-state resistance of 10.6 mΩ at VGS = 10 V, a maximum power dissipation of 58 W at TC, and an operating junction temperature range up to 175 °C. The device is qualified to AEC-Q101, making it suitable for automotive reverse-battery protection, load switching, and high-side switching in 12 V/24 V systems. What is a P-channel MOSFET? A P-channel MOSFET is a type of field-effect transistor that conducts when its gate-source voltage is driven below the threshold (i.e. negative relative to source). In the transistor taxonomy: MOSFET -> P-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor. Because the gate is referenced to the source, P-channel devices simplify high-side switching in low-voltage systems by allowing direct logic-level NPN/CMOS drive without charge-pump circuitry required by N-channel equivalents. Key features of the IPD50P04P4L11ATMA2 include: 10.6 mΩ R_DS(on) at VGS = 10 V for low conduction loss; a typical gate charge Qg of 45 nC for fast switching transitions; 58 W power dissipation on a DPAK pad with adequate copper; and 175 °C maximum junction temperature for harsh-environment reliability. The DPAK footprint is the industry-standard through-hole-replaceable surface-mount outline, easing both new designs and DPAK-to-TO-220 conversions. Technically, the device uses Infineon's OptiMOS P-channel technology, a trench-gate process that minimizes cell pitch and R_DS(on) × Qg figure of merit. The -40 V VDS rating provides >30 % derating margin over a 12 V automotive battery rail and tolerates load-dump transients common in 24 V truck systems. Body-diode robustness and avalanche rating support inductive load switching. Typical applications include automotive reverse-battery protection, electronic fuse (eFuse) blocks, motor driver high-side switches, USB Type-C VBUS load switches, and 12 V/24 V hot-swap circuits. AEC-Q101 qualification makes it directly usable under-the-hood and in body-electronics modules. When designing with this part, ensure the gate is pulled to source potential during off-state (logic-high on a P-channel gate disables the device). The DPAK tab must be soldered to a copper pad of at least 1 square inch to keep junction temperature below 150 °C under continuous 30 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
The Infineon IPD50R380CEAUMA1 is an N-channel power MOSFET built on Infineon's CoolMOS CE super-junction technology platform, rated at 500 V drain-source breakdown voltage with a maximum on-state resistance of 380 mΩ and a continuous drain current of 14.1 A (Tc) in a surface-mount PG-TO252-3 (DPAK) package. It is positioned as a price-performance optimized device targeting cost-sensitive consumer and lighting SMPS applications while still meeting high efficiency standards. What is a CoolMOS CE MOSFET? CoolMOS CE is Infineon's fifth-generation super-junction power MOSFET family tailored for cost-optimized high-voltage switching. Compared to standard MOSFETs, super-junction devices reduce on-state resistance per unit silicon area, lowering conduction loss and enabling higher switching frequencies in switch-mode power supplies (SMPS). Within the broader power-semiconductor taxonomy, this part belongs to the discrete MOSFET hypernym chain: MOSFET -> power MOSFET -> high-voltage MOSFET -> super-junction MOSFET -> CoolMOS CE. The CE variant trades the absolute lowest RDS(on) of the CP/PF series for a more attractive cost structure in mainstream topologies. Key features include a 500 V drain-source breakdown voltage (V(BR)DSS), 380 mΩ typical RDS(on) at VGS = 10 V, an integrated body diode optimized for hard-commutated switching, and low gate charge for reduced driver loss. The PG-TO252-3 (DPAK) surface-mount package offers a tab-style drain connection that doubles as a thermal pad, allowing the part to dissipate 98 W (Tc) with proper PCB copper layout. The technology combines a vertical super-junction drift region with a planar gate structure, achieving figures of merit (FOM = RDS(on) × Qg) appropriate for quasi-resonant and hard-switched flyback converters in the 50 W to 300 W range. Typical applications include LED lighting drivers, consumer electronics switch-mode power supplies (TVs, set-top boxes, white goods), auxiliary power supplies in industrial equipment, and adapters/chargers. The 500 V rating provides ample margin for PFC front stages operating from universal-mains (85-265 VAC) rectified to ~380 VDC. The low gate charge simplifies driving from a standard controller such as the CoolSET family, reducing overall BOM cost. When designing with this device, ensure that the PCB drain-pad copper area matches the application's continuous current and ambient temperature budget. Designers should consult the manufacturer datasheet for the SOA curves and recommended gate-drive voltage; operation outside the datasheet's VGS range (typically ±20 V absolute maximum) will permanently damage the oxide. The CE family is not qualified to AEC-Q101; for automotive applications, designers must select the automotive-grade SPNE/CE-A variant instead. This page synthesizes distributor stock and pricing, verified drop-in same-package alternatives, and design notes - practical engineering context not consolidated on the manufacturer datasheet cover page. All figures are referenced to the Infineon datasheet revision published on the product page.
IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon
The Infineon IPD50R399CPATMA1 is a 500 V N-channel power MOSFET built on Infineon's CoolMOS CP technology, rated for 9 A continuous drain current (Tc) and 83 W power dissipation (Tc), housed in a surface-mount PG-TO252-3-313 (DPAK) package. It delivers a typical on-resistance of 0.399 ohm at 25 deg C, optimized for hard-switching topologies in the 500 V class. What is a CoolMOS power MOSFET? A CoolMOS MOSFET is a high-voltage power transistor that uses Infineon's compensation-junction principle to achieve a dramatic reduction in on-state resistance and gate charge compared with conventional planar MOSFETs of the same voltage class. Within the power semiconductor hierarchy, this part sits in the discrete MOSFET family, which itself belongs to the broader power-switch device category. CoolMOS CP is the third-generation family tuned for hard-switching applications such as PFC and LLC converters. Key features include a 500 V drain-source breakdown voltage (550 V avalanche-rated per the part description), 9 A continuous drain current at case temperature, 0.399 ohm typical R_DS(on) at V_GS = 10 V, and an integrated body diode for bridge topologies. The TO252-3 (DPAK) package provides a low-profile surface-mount footprint with a large drain tab that doubles as a thermal pad, supporting PC-board heat-sinking without external heatsinks at moderate dissipation levels. The device uses a superjunction (SJ) architecture that distributes electric field across multiple epitaxial layers, reducing conduction and switching losses simultaneously. This makes the part well-suited to high-frequency SMPS designs where total switching loss dominates, while the integrated Zener-protected gate simplifies driver design. Typical applications include power-factor-correction (PFC) boost stages, LLC half-bridge converters in telecom and server power supplies, solar inverters, and industrial SMPS modules in the 100 W to 500 W range. When designing with this part, observe the maximum junction temperature of 150 deg C and ensure adequate copper area on the drain tab for heatsinking; switching losses in hard-switched converters can exceed conduction losses at high frequency. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPD5N25S3430ATMA1 - 250V 5A N-Channel OptiMOS MOSFET | Infineon
The Infineon IPD5N25S3430ATMA1 is an N-channel OptiMOS power MOSFET rated at 250 V VDS, 5 A continuous drain current (Tc), and 430 mΩ maximum R<sub>DS(on)</sub> at VGS = 10 V, housed in a surface-mount PG-TO252-3-313 (DPAK) package with 41 W power dissipation (Tc). It is AEC-Q101 qualified for automotive environments and operates from -55 °C to +175 °C junction temperature. An N-channel MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-source voltage; OptiMOS is Infineon's planar-trench process family optimized for low R<sub>DS(on)</sub> per die area, low gate charge, and rugged avalanche performance. The IPD5N25S3430ATMA1 belongs to the power MOSFET category within discrete semiconductors, targeting high-voltage switching where conduction loss, switching loss, and thermal behavior jointly determine efficiency. Compared to older 200 V/250 V generations, OptiMOS 250 V provides lower figure-of-merit (R<sub>DS(on)</sub> × Qg), enabling either cooler operation at the same current or higher current in the same footprint. Key specifications include a maximum drain-source voltage of 250 V, continuous drain current of 5 A at 25 °C case temperature, pulsed drain current (IDM) of 20 A, and a typical turn-on threshold of 3 V with 4 V maximum. The input capacitance is 422 pF typical, and the device is RoHS3 compliant with lead-free (matte-tin) leads. The PG-TO252-3-313 DPAK outline provides a low thermal resistance path through the drain tab to the PCB copper, supporting moderate continuous dissipation in surface-mount automotive and industrial boards. Typical applications include 12 V/24 V automotive load switching (HVAC blowers, LED drivers, body controllers), high-voltage DC/DC converter primary switches, flyback/forward converter switches, and motor-drive half-bridges for fans, pumps, and small BLDC actuators. The AEC-Q101 qualification makes it suitable for under-hood and chassis-mounted electronics where -40 °C cold-start and 150 °C ambient exposure are required. When designing with this part, ensure the gate-driver pull-up voltage reaches at least 10 V to fully enhance the channel and realize the datasheet R<sub>DS(on)</sub>. The DPAK tab must be soldered to a copper pad of at least 1 cm² for rated thermal performance; without it the continuous current must be derated significantly. Always verify SOA at peak switching locus to avoid RBSOA failure. This page synthesizes distributor pricing from DigiKey, Mouser, Arrow, and Octopart, drop-in DPAK alternatives from the OptiMOS 250 V family, and practical thermal/PCB design notes not collected on a single manufacturer page.