IGBTs
Produkte (65)
2MBI200UD-120-51 - 1200V 200A U-Series IGBT Module | Fuji Electric
The Fuji Electric 2MBI200UD-120-51 is a 1200V, 200A U-series IGBT module from the 2MBI200UD family, featuring high-speed switching with voltage-driven gate input and a robust low-inductance module structure. The part is a two-pack (half-bridge) configuration rated at VCES = 1200V, IC = 200A (Tc = 25°C), and targets inverter, motor-drive, and UPS power stages. The "-51" suffix designates a specific terminal/option configuration within Fuji's 2MBI200UD line. What is an IGBT module? An Insulated-Gate Bipolar Transistor (IGBT) module is a power-semiconductor building block that combines the voltage-driven gate of a MOSFET and the high-current/low-saturation-voltage conduction of a BJT. IGBT modules belong to the broader hierarchy of power transistors > discrete semiconductors > power conversion. They are the workhorse switching element in medium- to high-power converters (kW to MW class) such as motor drives, solar inverters, UPS systems, and industrial welders, where a single discrete device cannot handle the required current or thermal load. Key features include 1200V collector-emitter voltage, 200A continuous collector current at Tc = 25°C, voltage-driven gate input for simple MOSFET-style control, and a low-inductance module structure that reduces switching loss and voltage overshoot. The U-series targets high-speed switching frequencies and is optimized for industrial inverter applications. Architecturally, the U-series uses a planar NPT (non-punch-through) or field-stop trench gate cell structure with an anti-parallel FRED (fast recovery epitaxial diode) co-packaged in each switch position. The two-pack module integrates two IGBT/FRED half-bridge positions, enabling a single module to build a full-bridge or three-phase leg. Thermal design uses an isolated copper baseplate with thermal resistance in the low 0.1 °C/W range, allowing direct mounting to a heatsink. Typical applications include AC and DC servo drive amplifiers, uninterruptible power supplies (UPS), industrial welding machines, string inverters for solar power, and general-purpose AC motor drives. The 200A rating makes it well-suited for medium-power three-phase inverter stages in the 50-100 kW class. Design considerations for the 2MBI200UD-120-51 include proper gate-driver design (typically +15V/-8V or +15V/-15V), low-stray-inductance DC-link layout, and adequate heatsinking to keep Tj below the 150°C maximum. The mounting torque specification is 2.5-3.5 N·m (M5 or M6) and terminals 3.5-4.5 N·m (M6) per the manufacturer datasheet. This page synthesizes distributor availability, drop-in alternatives, and practical thermal notes not collected in the Fuji datasheet PDF alone.
5SJA3000L520300 - 5200V 3000A Press-Pack IGBT StakPak Module | ABB
The ABB 5SJA3000L520300 is a 5200 V, 3000 A press-pack IGBT (BIGT) StakPak module engineered for high-power traction, HVDC, and industrial drives. The device integrates a low-loss rugged BIGT chip with a 1:1 IGBT-to-diode ratio, a typical VCE(sat) of 3.1 V at 125 C, and a typical forward diode drop VF of 2.52 V at 125 C. It is optimized for low switching-frequency operation with smooth switching behavior for excellent EMC, packaged in a high-tolerance explosion-resistant press-pack housing. A press-pack IGBT is a hermetically sealed, pressure-contacted power module designed for sub-microsecond switching at megawatt power levels. Unlike soldered wire-bond modules, press-pack cells transfer heat and current through a clamped stack, eliminating bond-wire lift and solder-fatigue failure modes. Within the broader taxonomy, the 5SJA3000L520300 is a discrete power semiconductor (IGBT), itself part of the bipolar power-device family that includes GTOs, IGCTs, and BIGTs, and ultimately sits inside the power electronics stack feeding HVDC converters, large motor drives, and traction inverters. Key features of the 5SJA3000L520300 include the low-loss rugged BIGT chip, which combines IGBT and freewheeling diode functions into a single optimized silicon die; high tolerance to uneven mounting pressure across the stacked heatsink interface; an explosion-resistant package that remains in low impedance for up to 1 minute after short-circuit failure, giving the converter a defined short-circuit failure mode instead of an open one. The part targets converters running in the few-hundred-Hz range where conduction loss dominates over switching loss. From a system architecture standpoint, the StakPak platform stacks multiple BIGT wafers in series and parallel inside a single housing to reach 5.2 kV class / 3 kA class operation. ABB's BIGT is a monolithically integrated reverse-conducting IGBT that halves the conduction losses of conventional IGBT+diode pairs, which is critical at low switching frequency where conduction loss dominates. The press-pack package is also short-circuit failure mode (SCFM) rated for safe end-of-life behavior in series-connected HVDC stacks. Typical end-use applications include HVDC valve sections, multi-MW industrial drives (rolling mills, marine propulsion, mining hoists), and railway traction converters. The 5.2 kV class rating allows direct connection to 4.16 kV AC grid rectifiers and 3.3 kV / 6.6 kV motor terminals via series stacking. The smooth-switching BIGT also relaxes snubber and dv/dt-filter requirements at the system level. When designing with this module, mechanical stack pressure is the dominant reliability parameter - the press-pack requires a controlled, uniform clamping force across the contact surface to maintain thermal and electrical performance over decades of thermal cycling. Follow the ABB StakPak assembly guideline for clamp force, surface finish, and heatsink flatness to reach the rated 3000 A collector current. This page synthesizes distributor pricing, BIGT chip-level parameters, and press-pack mechanical design notes that are not consolidated in the manufacturer datasheet alone.
5SNG0450R17030 - 1700V LoPak1 Phase-Leg IGBT Module | ABB
The ABB 5SNG0450R17030 is a 1700 V LoPak1 phase-leg IGBT power module rated at 2 x 450 A continuous collector current, built around ABB's ultra low-loss, rugged SPT++ chip-set. Housed in an industry-standard LoPak1 package with press-fit auxiliary control pins and a copper base-plate, the module integrates a phase-leg (half-bridge) configuration together with a built-in NTC thermistor for temperature sensing and anti-parallel freewheeling diodes on each switch position. The 1700 V VCES rating makes the module a direct fit for 690 V AC line-voltage industrial drives and renewable-energy converters. An Insulated Gate Bipolar Transistor (IGBT) is a voltage-controlled semiconductor switch that combines the high-current, low-saturation characteristics of a bipolar transistor with the simple gate-drive requirements of a MOSFET. In the broader semiconductor taxonomy, an IGBT is a type of power transistor that sits between the MOSFET and the thyristor families, optimized for medium-frequency (1-30 kHz), medium-to-high power (1 kW to >1 MW) switching. Phase-leg IGBT modules combine two IGBT switches and their anti-parallel diodes into a single package, forming the basic building block of voltage-sourced inverters used in motor drives, solar inverters, UPS systems, and induction-heating converters. Key features of the 5SNG0450R17030 include VCEsat of 2.6 V (per the Vyrian listing), nominal turn-on time (ton) of 365 ns, press-fit control pins for reliable auxiliary contacts that eliminate hand-soldering on high-current modules, an integrated NTC thermistor for closed-loop thermal monitoring, and a copper base-plate providing low thermal resistance. The LoPak1 outline is widely adopted across industrial converters, allowing direct mechanical replacement in existing inverter designs. SPT++ (Soft-Punch-Through Plus Plus) is ABB's third-generation soft-punch-through IGBT cell that combines a thin wafer, field-stop layer, and an enhanced backside buffer to deliver lower VCEsat at higher current densities than earlier NPT (Non-Punch-Through) generations. The trade-off is a slightly softer switching tail current, which is acceptable for motor-drive and solar-inverter switching frequencies around 2-8 kHz. For higher switching frequencies (15-30 kHz) in resonant or totem-pole PFC applications, ABB typically recommends the HiPak or LinPak platforms with SiC or Si fast IGBT variants instead. Typical applications for the 5SNG0450R17030 include 690 V AC industrial motor drives, three-phase solar inverters, three-phase UPS systems, induction-heating inverters, and active front-end rectifiers. Its 1700 V VCES provides the necessary voltage margin for 690 V AC bus voltages, including the switching overshoot and DC-link ripple typically seen in regenerative drives. When designing with this module, calculate worst-case conduction and switching losses at the actual switching frequency, then verify that the heatsink keeps the base-plate below 125 C at full load. Use the integrated NTC thermistor for overtemperature protection and the press-fit pins for the gate-driver interface - never solder control pins on a press-fit module as the thermal mismatch will crack the joint during thermal cycling. This page synthesizes ABB datasheet data, distributor listings, and application notes with practical PCB and thermal design guidance not aggregated on a single manufacturer page, plus a curated alternative list to help engineers handle sourcing or second-source decisions for LoPak1 form-factor designs.
6MBI300U4-120 - 1200V 300A 6-in-1 IGBT Module | Fuji Electric
The Fuji Electric 6MBI300U4-120 is a 1200 V, 300 A U-series IGBT power module in a six-in-one (6-unit) package, integrating a three-phase inverter bridge with built-in thermistor temperature sensing and 29 terminals for high-power conversion. An IGBT (Insulated Gate Bipolar Transistor) module combines multiple IGBT dies and freewheeling diodes on an isolated substrate within a single molded housing, sitting at the top of the power semiconductor hierarchy: discrete IGBT -> IGBT chip set -> power module -> power conversion system. Modules simplify thermal design, reduce stray inductance, and provide certified isolation between the silicon and the heatsink surface. Key features of the 6MBI300U4-120 include a collector-emitter voltage rating of 1.2 kV, a maximum collector current of 450 A (absolute maximum), high-speed voltage-drive switching, and a low-inductance module structure that minimizes voltage overshoot during turn-off. The integrated thermistor enables real-time heatsink temperature monitoring for protection and derating logic, and the maximum operating junction temperature is 150 C. The U-series construction uses Fuji Electric's optimized IGBT and FWD chips for a favorable trade-off between conduction losses (low VCE(sat)) and switching losses, making the module well suited to hard-switched PWM inverters driven by standard gate drivers. The low-inductance layout supports fast di/dt events without excessive transient voltages when paired with proper DC-link snubbering. Typical applications include three-phase AC motor drives (VFDs), servo amplifiers, industrial UPS systems, welding power supplies, and renewable-energy power conversion stages operating from 1200 V-class DC buses. The 300 A continuous rating with 450 A peak capability covers mid- to high-power inverter stages in the tens of kilowatts range. Design consideration: always operate within absolute maximum ratings for voltage, current, and temperature, and connect an adequate fuse or circuit protector as required by the datasheet safety guidance; verify square operating area limits against your worst-case load and fault conditions. This page synthesizes distributor availability, drop-in variant alternatives, comparison data, and practical design notes not consolidated in the manufacturer datasheet.
7MBP150RA-120 - IGBT-IPM 1200V 150A 7-in-1 | Fuji Electric
The Fuji Electric 7MBP150RA-120 is a 1200 V, 150 A Intelligent Power Module (IGBT-IPM) of the R series integrating seven power devices in one package (a six-unit three-phase inverter bridge plus a seventh braking chopper unit) with built-in gate drive and protection circuitry. An Intelligent Power Module (IPM) is a power semiconductor module that combines an insulated-gate bipolar transistor (IGBT) power stage with integrated control, gate-drive, and protection circuits in a single insulated package. Within the power-electronics hierarchy, an IPM sits above discrete IGBTs and below full drive systems: a power module -> power management IC -> power conversion system. The IPM format eliminates external gate-driver design, shortens development time, and reduces part count. Key features include junction-temperature protection achieved by directly sensing the IGBT chip temperature, low power loss with soft switching for reduced EMI, and higher reliability through a large decrease in the number of parts in the built-in control circuit. The 1200 V collector-emitter rating suits 380-480 V AC industrial buses, while the 150 A collector current (at Tc = 25 C) and 1040 W maximum power dissipation cover high-power drive stages. Technically, the module integrates N-channel IGBTs with embedded overcurrent (OC/SC), undervoltage (UV), and overtemperature (OT) protection, and it issues a fault output (ALM). Integrated drive removes the need for discrete gate resistors and optocoupler isolation stages on the low-side, improving consistency across production units. Typical applications include industrial AC motor drives (VFD/inverter stages), servo amplifiers, and regenerative braking chopper circuits in general-purpose inverters where the seventh braking unit is used. A key design consideration: keep the control-supply Vcc at 15 V as used in the datasheet electrical-characteristics conditions, and provide adequate heatsinking because power dissipation reaches 1040 W under absolute-maximum conditions. This page adds distributor sourcing context, replacement guidance, and practical design notes not found in the manufacturer datasheet.
ADUM4135BRWZ - 4A Isolated IGBT Gate Driver | Analog Devices
The ADUM4135BRWZ is a single-channel, high-voltage isolated gate driver from Analog Devices, specifically optimized for driving insulated gate bipolar transistors (IGBTs). It utilizes Analog Devices' iCoupler® magnetic isolation technology to provide 5000Vrms isolation between the input and output stages, ensuring safe and reliable operation in high-voltage applications. The device delivers a peak output current of 4A, making it suitable for driving high-power IGBTs and MOSFETs in industrial motor drives, solar inverters, and electric vehicle (EV) charging systems. An isolated gate driver is a specialized integrated circuit that transfers control signals across an isolation barrier while providing the high-current drive needed to switch power transistors. It combines galvanic isolation, typically using magnetic or capacitive coupling, with a high-current output stage. In the hierarchy of power electronics, an isolated gate driver sits between the low-voltage controller (such as a microcontroller or DSP) and the high-voltage power stage, ensuring both signal integrity and safety. The ADuM4135 belongs to the family of isolated gate drivers, which are essential components in power conversion systems. Key features of the ADUM4135BRWZ include a Miller clamp to prevent false turn-on due to the Miller effect, a desaturation (DESAT) protection circuit that detects overcurrent conditions and shuts down the IGBT, and a fault output that signals abnormal operation. The device supports both single-supply and dual-supply configurations, with a wide output supply range from 4.5V to 35V. It also features a common-mode transient immunity (CMTI) of 100 kV/µs, ensuring reliable operation in noisy environments. The ADuM4135 is built using Analog Devices' proprietary iCoupler technology, which uses chip-scale transformers to achieve isolation. This technology provides superior performance compared to optocouplers, including higher data rates, lower power consumption, and better reliability. The device is available in a 16-lead SOIC package (RW-16), which is compact and suitable for space-constrained designs. The operating temperature range is -40°C to +125°C, making it suitable for industrial and automotive applications. Typical applications include IGBT gate drive circuits in motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment. The ADUM4135BRWZ is also used in electric vehicle (EV) traction inverters and charging stations, where high isolation and robust protection are critical. Its high output current and fast switching speed enable efficient power conversion, while the integrated protection features enhance system reliability. When designing with the ADUM4135BRWZ, it is important to ensure proper PCB layout to minimize parasitic inductance and maintain signal integrity. The DESAT pin should be connected to the IGBT collector through a high-voltage diode, and the Miller clamp should be connected to the gate to prevent false turn-on. Additionally, the input and output supplies should be adequately decoupled with ceramic capacitors placed close to the device pins.
ADUM4136BRWZ - 4A Isolated IGBT Gate Driver | Analog Devices
The ADUM4136BRWZ is a single-channel, galvanically isolated gate driver from Analog Devices, specifically optimized for driving insulated gate bipolar transistors (IGBTs). It delivers up to 4A peak output current and provides 5000Vrms isolation using Analog Devices' iCoupler technology. The device is available in a 16-SOIC package and supports both unipolar and bipolar secondary supplies, enabling negative gate drive when required. A gate driver is a power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a power transistor. In the context of IGBTs and MOSFETs, the gate driver ensures fast, efficient switching by providing the necessary charge to the gate capacitance. The ADUM4136 integrates isolation, making it a key component in power conversion systems where the control side and power stage must be electrically separated for safety and noise immunity. Key features include a 4A peak output current, 5000Vrms isolation voltage, and a DESAT (desaturation) protection pin that monitors the collector-emitter voltage of the IGBT. When the DESAT pin rises above the 9.2V threshold, a fault registers, and within 200ns, the gate output drives low, protecting the IGBT from short-circuit conditions. The device also features a blanking time of approximately 2μs, which is a typical design choice to prevent false triggering during turn-on transients. The ADUM4136 uses chip-scale transformers for isolation, providing reliable signal transfer across the isolation barrier. It supports both unipolar and bipolar supply configurations, allowing designers to apply negative gate drive voltages to improve noise immunity and reduce switching losses. The propagation delay is typically [DATA_NEEDED: propagation delay], and the device operates over a wide temperature range of -40°C to +125°C. Typical applications include motor drives, solar inverters, uninterruptible power supplies (UPS), and industrial power conversion systems. The high isolation voltage and robust protection features make it suitable for demanding environments where safety and reliability are critical. When designing with the ADUM4136, ensure proper PCB layout to minimize parasitic inductance in the gate drive loop. Place the gate resistor close to the IGBT gate and use a low-impedance return path for the high di/dt currents. Also, consider the DESAT blanking time and adjust the external blanking capacitor to match the IGBT's switching characteristics.
AIKB40N65DH5ATMA1 - 650V 40A TRENCHSTOP 5 IGBT | Infineon
The Infineon AIKB40N65DH5ATMA1 is a 650 V, 40 A high-speed NPT IGBT built on Infineon's TRENCHSTOP 5 technology and co-packaged with a RAPID 1 fast and soft antiparallel diode, delivered in a surface-mount PG-TO263-3-2 (D2PAK) package. According to the Infineon product page, the part is qualified for automotive discrete switch applications and targets fast-switching topologies where energy efficiency and switching loss minimization are critical. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that combines the high-input-impedance voltage control of a MOSFET with the high-current-density, low-saturation-voltage conduction of a bipolar junction transistor. Within the broader taxonomy, an IGBT belongs to the discrete semiconductor family, sits under the power-transistor hierarchy, and is the workhorse device for medium-to-high voltage (typically 600 V to 6500 V) switching converters, motor drives, and inductive heating systems. The TRENCHSTOP 5 generation specifically targets reduced VCE(sat) and switching losses relative to the prior TRENCHSTOP 4 platform. Key specifications include a VCES rating of 650 V, a nominal collector current of 40 A, and an integrated RAPID 1 fast/soft co-pack diode that suppresses reverse-recovery-induced voltage overshoot. The device is qualified to AEC-Q101 for automotive use, supporting deployment in EV traction inverters, on-board chargers, and DC/DC converters. The D2PAK (PG-TO263-3-2) surface-mount package enables automated assembly and provides a low thermal-resistance path via its exposed die-attach pad. The AIKB40N65DH5ATMA1 uses a non-punch-through (NPT) trench cell design with a sophisticated carrier profile, achieving a low VCE(sat) while maintaining a wide safe operating area. The co-packed RAPID 1 diode is optimized for soft reverse recovery, reducing EMI in hard-switched bridge topologies. Together, the matched IGBT/diode pair minimizes turn-on losses in the complementary switch by reducing peak reverse-recovery current. Typical applications include EV charging infrastructure (on-board chargers and DC fast-charging stations), photovoltaic string inverters, uninterruptible power supplies (UPS), industrial motor drives, and induction cooking. The automotive-grade qualification makes the device particularly suitable for 400 V and 800 V electric-vehicle powertrain converters. When designing with this device, pay close attention to gate-drive voltage (recommended +15 V on, 0 V or negative off) and gate resistance selection. A gate resistor of 5 ohm to 47 ohm typically balances switching loss against EMI. The D2PAK footprint requires substantial PCB copper area (typically 1 to 6 square inches of 2 oz copper) to keep junction temperature within safe limits. This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical design notes not found on a single manufacturer or distributor page.
BIM300D75P3I001 - 300A 750V IPM IGBT Module | BYD Semiconductor
The BYD Semiconductor BIM300D75P3I001 is a 300 A, 750 V Intelligent Power Module (IPM) that integrates a three-phase IGBT inverter stage, optimized gate drivers, and comprehensive protection functions into a single package. According to the BYD Semi IPM product page, the module is engineered for high-power motor drive applications and uses advanced IGBT technology with low VCE(sat) to balance switching speed and conduction loss. The 750 V breakdown rating provides sufficient margin for 400 V and 480 V AC bus rectification, while the 300 A continuous output supports industrial inverter power levels above 75 kW. An Intelligent Power Module (IPM) is a power electronics building block that combines the power semiconductors (IGBTs and freewheeling diodes) with their gate drive circuitry, level-shifters, and protection logic inside one isolated housing. The IPM sits hierarchically below discrete IGBT modules and above gate-driver ICs in the power management taxonomy; its purpose is to dramatically shorten inverter development time by removing the need to design a half-bridge driver, dead-time circuit, and fault handling from scratch. The BIM300D75P3I001 family is part of the BYD IPM portfolio targeting three-phase motor drives, servo amplifiers, and HVAC compressor inverters. Key features include built-in under-voltage lockout (UVLO) for each phase, short-circuit protection via DESAT detection, integrated thermal sensing with over-temperature shutdown, and an isolated package baseplate. The internal gate drive stage is matched to the IGBT dies, eliminating external negative supply requirements and reducing PCB complexity. These features collectively reduce BOM count, shrink the inverter footprint, and improve long-term reliability compared with discrete three-phase inverter implementations. From an electrical architecture perspective, the BIM300D75P3I001 uses a six-pack topology where three high-side and three low-side IGBTs form a full three-phase bridge. Each phase leg has its own gate drive bootstrap supply domain, simplifying control interface to a logic-level PWM signal from the MCU or DSP. The integrated protections ensure that abnormal conditions such as shoot-through, ground loss, or excessive junction temperature trigger a single fault flag rather than damaging the silicon. Typical applications include three-phase AC motor drives for HVAC compressors, industrial servo drives, electric vehicle traction auxiliary inverters, and solar pump inverters. Designers select the BIM300D75P3I001 when they need a proven, compact power stage with built-in protection to shorten regulatory certification cycles. When designing with this device, pay close attention to heatsink selection, baseplate isolation, and creepage/clearance distances. The module's continuous current rating assumes a specific thermal resistance to ambient; derate for high ambient temperatures or restricted airflow conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the BYD Semiconductor datasheet to support faster inverter design decisions.
BSM100GB60DLC - 600V 100A Dual IGBT Module | Infineon
The Infineon BSM100GB60DLC is a 600V, 100A dual (half-bridge) IGBT power module in the industry-standard 34 mm package (MODULE-7 footprint), originally manufactured by eupec GmbH, now part of Infineon Technologies. A dual IGBT module integrates two insulated-gate bipolar transistors with accompanying freewheeling diodes into a single isolated housing, forming one leg of a three-phase inverter or a complete half-bridge power stage. Within the power semiconductor hierarchy, it sits between discrete IGBTs and complete intelligent power modules (IPMs), serving as the workhorse switching element in power conversion systems. Key features include a 600V collector-emitter blocking voltage, a 100A DC collector current rating under datasheet-specified conditions, and an N-channel, two-unit (dual) configuration. Infineon highlights its 34 mm 600V dual IGBT module family as a superior solution for frequency-controlled inverter drives, citing optimized switching characteristics such as switching softness and reduced switching losses, which lower EMI filter requirements and improve converter efficiency. The module carries UL/CSA certification per UL1557 (file E83336) and supports operating temperatures up to 150 degrees C, enabling high power density designs in thermally demanding environments. The isolated baseplate construction allows direct mounting onto liquid-cooled or air-cooled heatsinks with electrical isolation maintained between the silicon and the mounting surface. Typical applications include variable-frequency motor drives for industrial automation, servo amplifiers, UPS inverters, and general-purpose power conversion equipment. The half-bridge topology directly maps to one inverter phase, so three modules build a complete three-phase drive output stage. Design consideration: the 100A rating applies only under the datasheet-specified conditions and is not a thermal operating guarantee for every switching condition. Engineers must verify junction temperature under their actual switching frequency, gate drive, and cooling configuration. This page synthesizes distributor availability data, family cross-references, and practical engineering notes not consolidated in the manufacturer datasheet.
BSM50GX120DN2 - 1200V 50A IGBT Power Module | Infineon
The Infineon BSM50GX120DN2 is a 1200V, 50A IGBT power module from Infineon's low-power ECONOPACK 2 family, designed for industrial motor drives, AC inverter drives, and renewable-energy power conversion stages. Housed in an ECONOPACK 2K chassis-style module with isolated baseplate and screw-mount power terminals, it combines a three-phase IGBT inverter bridge with a temperature-sense NTC and integrated anti-parallel diodes for hard-switched PWM operation. An IGBT (Insulated-Gate Bipolar Transistor) is a voltage-controlled power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. It sits in the silicon hierarchy below MOSFET and above BJT, and together with its freewheeling diode forms a switching pole. The IGBT is the workhorse of medium-power conversion between roughly 600V and 6500V, where MOSFETs become conduction-loss-limited and thyristors cannot be pulse-width modulated, and where it functions as a power-management building block inside motor drives, UPS, solar inverters, and induction-heating converters. Key features include a 1200V collector-emitter rating (Vces), 50A continuous collector current (Ic), a square RBSOA (Reverse Bias Safe Operating Area) rated for hard-switched operation at full current and voltage, an integrated NTC thermistor for junction-temperature monitoring, and an isolated ceramic baseplate for direct heatsink mounting without additional insulation. The ECONOPACK 2 housing provides a low-inductance, low-thermal-resistance mechanical platform that simplifies busbar layout and reduces stray inductance at the switching node. The module uses Infineon's trench-field-stop IGBT3 generation technology with soft-switching-optimized freewheeling diodes, balancing low Vce(sat), low turn-off losses (Eoff), and a robust short-circuit withstand of typically 10 microseconds at 600V/2x rated current. The three-phase bridge is partitioned as a six-pack plus NTC, allowing direct paralleling for higher-current stacks only after derating and thermal validation. Gate drive is normally supplied by a bootstrap- or isolated-supply-based driver IC such as the IR2136 or 2ED020I12-F2. Typical applications include AC inverter drives for industrial motors, solar string and central inverters, three-phase UPS rectifier-inverter stages, and welding-machine power stages. The 50A/1200V rating maps cleanly onto 400V class AC mains-fed inverter outputs up to roughly 22 kW when properly heatsunk. When designing with this device, observe the SOA: hard-switched IGBTs must stay within Vce(sat) and reverse-bias limits at DC-link voltages up to 1200V with controlled dV/dt and adequate dead-time. Always consult the manufacturer datasheet for RBSOA curves, isolation voltage, and minimum heatsink torque values before substituting alternate modules. This page consolidates distributor pricing, engineering-grade drop-in equivalents from verified cross-reference data, and practical design notes so engineers can compare the BSM50GX120DN2 against alternative IGBT modules in a single view.
CM100TJA-24FA - 1200V 100A Trench Gate IGBT Module | Mitsubishi
The Mitsubishi CM100TJA-24FA is a 1200V, 100A trench-gate IGBT power module designed for high-voltage, high-current inverter applications in industrial motor drives and traction systems. Built on Mitsubishi's third-generation trench-gate thin-wafer IGBT technology, it delivers low VCE(sat) and reduced switching losses in a standard industrial power-module footprint. The module integrates a single-switch IGBT configuration optimized for high-frequency PWM operation. With a continuous collector current rating of 100A at TC=80°C, this module serves as the workhorse switch leg for 3-phase inverter bridge topographies in 400V and 690V class drives. An IGBT module (Insulated-Gate Bipolar Transistor module) is a power semiconductor assembly that combines one or more IGBT dies with antiparallel diodes in an isolated, baseplate-cooled package. It belongs to the broader category of power modules -> discrete power semiconductors -> power transistors -> discrete semiconductors, designed to switch kiloampere-level currents at voltages up to 1700V. IGBTs bridge the gap between MOSFETs (best at low voltage, high frequency) and thyristors (best at very high power, low frequency) and are the dominant switch in modern variable-frequency drives (VFDs), solar inverters, and industrial UPS systems. Key features of the CM100TJA-24FA include trench-gate field-stop technology for low conduction loss, an integrated gate resistor for simplified drive design, and an aluminum-silicon-carbide (AlSiC) baseplate option for high thermal-cycling reliability. The module's low-inductance internal layout supports switching frequencies in the 5-15 kHz range typical of traction inverter and heavy-duty industrial drive applications. Short-circuit withstand capability of 10 microseconds enables robust protection integration with conventional gate drivers. Typical applications include AC motor variable-frequency drives, solar string and central inverters, industrial welding inverters, UPS systems, and electric-vehicle traction inverters. This particular variant (CM100TJA-24FA, where the -24F suffix denotes the 1200V/100A class) is widely deployed in 690V industrial drives and 750V-class battery-electric vehicle traction inverters. When designing with this part, ensure proper DC-link snubber capacitance, follow the manufacturer's torque sequence for the main power terminals, and apply a thermal interface material rated for the application's temperature swing. Gate-drive circuitry should include active Miller clamping to prevent parasitic turn-on in half-bridge configurations.
CM300HA1-24H - 1200V 300A Single IGBT Module | Mitsubishi
The Powerex / Mitsubishi Electric CM300HA1-24H is a 1200 V, 300 A single-configuation IGBT power module rated for 2100 W power dissipation, housed in an isolated chassis-mount IGBTMOD package with a reverse-connected super-fast-recovery free-wheel diode. It is designed for hard-switching power conversion applications where high blocking voltage and high current capability are required. An IGBT (insulated-gate bipolar transistor) module combines the voltage-driven gate of a MOSFET with the low conduction loss of a bipolar transistor, making it the preferred switching device for medium- and high-power converters. IGBT modules sit at the top of the discrete power semiconductor hierarchy (switch -> power transistor -> power module) and form the core switching element of inverters, drives, and power supplies in the kilowatt range and above. Key features of the CM300HA1-24H include its 1200 V collector-emitter blocking voltage (VCES) suitable for 600-690 V AC industrial buses, its 300 A DC collector current rating, and an integrated anti-parallel super-fast recovery free-wheel diode that safely handles inductive load currents during switching transitions. The 2100 W power dissipation capability supports demanding motor-drive and inverter duty cycles. A defining advantage of the IGBTMOD construction is that all components and interconnects are isolated from the heat-sinking baseplate, providing high isolation voltage and greatly simplified system assembly and thermal management. The baseplate mounts directly to a heatsink, and the module terminals accept standard busbar or fast-on connections common in industrial power electronics. Typical applications include AC motor drives (VFDs), servo amplifiers, UPS systems, welding power supplies, induction heating, and DC chopper/regulator circuits. The single-IGBT topology means designers use one module per switch position in half-bridge, full-bridge, or three-phase topologies. Design considerations: because this is a chassis-mount module, thermal design dominates reliability - plan the heatsink for worst-case conduction plus switching loss, apply thermal interface material evenly, and observe the manufacturer-recommended mounting torque. Gate-drive circuits must respect the recommended gate resistance range to control di/dt and switching energy. This page synthesizes verified distributor data, the manufacturer datasheet, drop-in family alternatives, and practical design notes not found in a single distributor listing.
CM600DX-24S - 1200V 600A Dual IGBT Module | Mitsubishi Electric
The Mitsubishi Electric CM600DX-24S is a high-power switching insulated-type dual (half-bridge) IGBT module rated 1200 V, 600 A, and 3330 W, housed in a standard insulated module package for industrial power conversion. The S1-series variant CM600DX-24S1 shares this platform, with the DigiKey listing confirming 1200 V collector-emitter voltage, 600 A current, and 3330 W total power dissipation in a half-bridge configuration. An IGBT (Insulated Gate Bipolar Transistor) module is a power semiconductor device that combines the voltage-driven gate of a MOSFET with the high-current, low-conduction-loss capability of a bipolar transistor. In the power-management hierarchy, IGBT modules sit at the top of the switching-device family, above discrete IGBTs and MOSFETs, and form the core switching stage of inverters, motor drives, and power supplies in the kilowatt-to-megawatt class. Key features of this device include a 1200 V blocking rating suitable for 400 V-class AC lines and DC bus voltages up to roughly 600-700 V, a 600 A continuous collector current rating, and 3330 W power dissipation capability on a properly cooled heatsink. The dual (DX / half-bridge) topology integrates two IGBTs with anti-parallel free-wheeling diodes in one insulated package, simplifying busbar layout and reducing stray inductance. Technically, the module uses N-channel IGBT silicon with a typical saturation voltage in the region of 2 V (per distributor data for the S1 variant), balancing conduction loss against switching loss for medium-frequency switching. The insulated baseplate provides 2500 Vrms-class isolation (typical for this package class; verify in the manufacturer datasheet), allowing direct mounting to grounded heatsinks. Typical applications include industrial variable-frequency motor drives, servo amplifiers, UPS systems, welding power sources, and renewable-energy inverters, where ruggedness, high current, and proven reliability matter more than the fastest switching speeds. When designing with this module, size the gate driver to deliver adequate gate charge at the intended switching frequency, and always verify short-circuit ratings and thermal cycling limits against the official Mitsubishi datasheet before release to production. This page synthesizes distributor listings, manufacturer datasheet links, drop-in alternatives, and practical design guidance not found in the raw datasheet, helping engineers cross-reference the CM600DX-24S quickly.
CM600DY-24T - 1200V 600A Dual IGBT Module | Mitsubishi Electric
The Mitsubishi Electric CM600DY-24T is a T-Series standard-type dual (half-bridge) insulated IGBT power module rated 1200 V collector-emitter voltage and 600 A collector current, intended for high-power switching use in a chassis-mount insulated package. An IGBT (insulated-gate bipolar transistor) module combines multiple IGBT dies with freewheeling diodes on an isolated baseplate, forming the switching stage of a power converter. In the power-electronics hierarchy it sits above discrete transistors and below complete power assemblies: it is the core building block of inverters, converters, and motor drives. The dual (DY) configuration integrates a half bridge - high-side and low-side switch with complementary diodes - so a single module forms a complete inverter leg. Key features of the T-Series CM600DY-24T include low power loss switching, high reliability construction, and an insulated package that simplifies heatsink mounting and inverter design. According to Mitsubishi Electric, the T-Series standard-type family contributes to energy savings and simplifies inverter design for industrial equipment. The #330G variant adds pre-applied PC-TIM (phase-change thermal interface material) for improved thermal coupling. The half-bridge topology with integrated freewheeling diodes reduces stray inductance compared with discrete solutions, supporting hard-switched PWM operation in high-current inverters. Screw-terminal connections accept busbar and laminated busbar assemblies typical of high-power layouts. Typical applications include industrial motor drives, UPS systems, welding power supplies, and servo amplifiers, where 1200 V class devices interface with 400-690 V AC line inputs via a DC bus. Design consideration: because this is a chassis-mount module, thermal design dominates reliability - verify junction-to-case thermal resistance and heatsink flatness, and apply the manufacturer-specified mounting torque to the terminal and mounting screws to avoid die stress. This page synthesizes distributor availability data, cross-reference alternatives, and practical design notes not found in the manufacturer datasheet.
CM600DY-24T330G - 1200V 600A Dual IGBT Module | Mitsubishi
The Mitsubishi Electric CM600DY-24T330G is a 1200 V, 600 A dual (half-bridge) IGBT module from the T-Series standard-type lineup, built on Mitsubishi's 7th-generation CSTBT (Carrier Stored Trench Bipolar Transistor) technology and supplied with PC-TIM (pre-applied thermal interface material) for improved thermal contact. An IGBT (Insulated Gate Bipolar Transistor) module is a power semiconductor device that combines MOSFET gate-drive simplicity with bipolar transistor current-handling capability. Within the power electronics hierarchy, it sits above discrete IGBTs and forms the switching core of voltage regulators, motor drives, and power conversion systems. The insulated-type package allows the module's baseplate to be mounted directly to a grounded heatsink while keeping the power circuit isolated. Key features include the high-current dual configuration (600 A per switch at 1200 V blocking), the CM600DY industry-standard dual pin-out and footprint, and Thick Metal Substrate (TMS) package technology that eliminates the typical large substrate solder layer, a common failure point, improving thermal cycling lifetime. The RFC (Relax Field Cathode) diodes co-packaged with each IGBT reduce reverse-recovery losses. The 7th-generation CSTBT die delivers low saturation voltage and switching loss, and ultrasonic terminal bonding with internal bus structure improves package inductance compared with earlier generations. Typical applications include industrial motor drives, inverters for large drives, UPS systems, welding power supplies, and high-power switching converters where a half-bridge topology is required. Design consideration: with PC-TIM pre-applied, no separate thermal grease is required, but the -330G suffix variant should be verified against thermal-resistance requirements; the suffix distinguishes the PC-TIM-equipped version from the standard CM600DY-24T. This page synthesizes distributor availability, same-family drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
DP15H1200TO101982 - 1200V 15A IGBT Module | Danfoss
The Danfoss DP15H1200TO101982 is a 1200V, 15A IGBT power module engineered for demanding industrial power conversion, supplied in a Danfoss power module package with isolated baseplate construction. An IGBT (Insulated Gate Bipolar Transistor) module is a power semiconductor device that combines the simple gate drive of a MOSFET with the high-current, low-conduction-loss capability of a bipolar transistor. Within the power electronics hierarchy, the IGBT module sits above discrete IGBTs and below complete power assemblies, forming the switching core of voltage-source inverters, motor drives, and power supplies. Modules integrate one or more IGBT dies with freewheeling diodes on a common isolated substrate, enabling compact, thermally efficient designs. The DP15H1200TO101982 addresses the rigorous thermal and efficiency demands of modern industrial power conversion. Its 1200V collector-emitter voltage class supports direct operation from 400V to 690V AC line systems with appropriate headroom, while the 15A continuous current rating suits low-to-mid power inverters and auxiliary drives. Danfoss module construction emphasizes low thermal resistance and reliable solder or pressure-contact interconnects for long service life in industrial environments. According to distributor documentation, the device integrates advanced silicon technology with a robust mechanical package, optimizing high-density power electronics designs. Typical applications include industrial motor drives, renewable energy inverters, welding power supplies, and servo amplifiers, where the 1200V rating and 15A current class provide a balance of ruggedness and efficiency. When designing with this module, verify the exact package outline, terminal arrangement, and gate resistor recommendations from the manufacturer datasheet before committing to a PCB or busbar layout, as Danfoss module mechanical variants differ across the DP-series family. Thermal interface material selection and heatsink flatness directly affect junction temperature margins. This page synthesizes distributor availability data, datasheet references, and sourcing guidance for the DP15H1200TO101982 that is not consolidated on the manufacturer's site, helping engineers evaluate drop-in feasibility and procurement options in one place.
FF1200R17IP5R - 1700V 1200A PrimePACK 2 IGBT Module | Infineon
The Infineon FF1200R17IP5R is a 1700 V, 1200 A half-bridge IGBT power module in the PrimePACK 2 chassis-mount footprint, built on Infineon's TRENCHSTOP IGBT5 technology with .XT die-top interconnection. The module integrates an Emitter Controlled 5 (EC5) free-wheeling diode and an NTC thermistor for thermal monitoring, and is qualified for an extended virtual-junction operating temperature Tvjop = 175 °C. Output current capability is increased by more than 25% in the same PrimePACK 2 footprint versus the prior IGBT4 generation, while sintered chip attachments and copper wire bonds deliver the highest power-cycling capability in the family. An IGBT module is a high-power, integrated switching subsystem that combines one or more insulated-gate bipolar transistors with anti-parallel diodes in a single, isolated package, allowing inverter and converter designers to build three-phase or half-bridge power stages with a single mechanical assembly. IGBT modules sit at the top of the power-electronics hierarchy: IGBT -> power semiconductor -> discrete semiconductor -> power electronics. The PrimePACK 2 family is targeted at medium-voltage, high-current industrial converters where conduction losses, short-circuit ruggedness, and long-term reliability under thermal cycling are the dominant design constraints. Key features of the FF1200R17IP5R include a 1700 V collector-emitter blocking rating, 1200 A nominal collector current at Tc = 25 °C (with derating at higher Tvj), low VCE(sat) typical of TRENCHSTOP IGBT5, and a screw-type power and signal terminal layout that has become the de-facto standard for 1200 A/1700 V class inverters. The integrated NTC thermistor enables closed-loop temperature monitoring, while the EC5 diode minimizes reverse-recovery losses in hard-switched topologies. The PrimePACK 2 footprint is mechanically compatible with prior-generation PrimePACK 1 modules, simplifying upgrades. Typical applications for the FF1200R17IP5R include high-power industrial drives, wind-power converters, solar central inverters, traction auxiliaries, and high-power UPS systems, where the module's combination of low conduction loss, high current density, and rugged thermal performance enables compact, high-efficiency converter designs in the megawatt class. When designing with this module, ensure the dc-link bus bars use low-inductance laminated construction to stay within the module's voltage overshoot limit at 1700 V, and torque the main power screws to the manufacturer-specified value. The NTC pin must be connected to the controller's analog front end and used for both thermal protection and derating of switching frequency.
FF1400R17T2P8 - 1700V 1400A XHP2 IGBT Module | Infineon
The Infineon FF1400R17T2P8 is a high-power half-bridge IGBT module in the XHP(TM) 2 package (AG-XHP2K17), rated 1700 V collector-emitter voltage (VCES) and 1400 A nominal collector current (IC nom) with 2800 A repetitive peak current (ICRM). It integrates TRENCHSTOP(TM) IGBT8 chip technology with emitter controlled 8 (EC8) freewheeling diodes and an integrated NTC thermistor for temperature monitoring. An IGBT module is a power semiconductor assembly combining insulated-gate bipolar transistors and freewheeling diodes in an electrically isolated housing. Within the power electronics hierarchy, IGBT modules occupy the level between discrete IGBTs and complete power stacks, serving as the switching core of voltage source inverters. They translate low-voltage gate control signals into multi-hundred-kilowatt power conversion, making them foundational components in industrial drives, traction, and renewable energy converters. Key features include the half-bridge topology, which simplifies inverter leg design and reduces busbar complexity; a low-inductance XHP 2 housing that minimizes parasitic inductance and voltage overshoot during fast switching; and a maximum junction temperature of 175 C, enabling high power density designs. The EC8 diodes exhibit soft, fast reverse recovery, reducing EMI and turn-off losses in the freewheeling path. Technically, the TRENCHSTOP IGBT8 generation reduces both conduction and switching losses versus prior generations, supporting higher efficiency and switching frequency in multi-megawatt converters. The internal module layout is optimized for symmetrical current paths and low stray inductance, while the NTC provides a linear temperature signal for protection and monitoring circuits. Typical applications include wind turbine converters, medium-voltage drives, rail traction converters, and high-power industrial inverters, where the 1700 V class supports DC-link voltages around 1000-1100 V. Design consideration: use a low-inductance, symmetrical DC-link busbar and a gate driver with sufficient peak current; liquid or forced-air cooling must keep the junction within the 175 C limit. Prices cited are as of 2026-09-11. This page synthesizes manufacturer datasheet data, distributor availability, and practical design guidance not found on standard distributor listing pages.
FF2000R17T2P8 - 1700V 2000A XHP2 Half-Bridge IGBT | Infineon
The Infineon FF2000R17T2P8 is a high-power 1700 V, 2000 A half-bridge IGBT module built on the XHP 2 (XHPTM2) low-inductive package platform, integrating a TRENCHSTOP IGBT8 trench field-stop chipset with an emitter controlled 8 (EC8) soft-recovery diode and an integrated NTC temperature sensor. An IGBT (Insulated Gate Bipolar Transistor) module is a power semiconductor assembly that combines the MOSFET-like gate-drive simplicity of the insulated gate with the low on-state conduction losses of bipolar conduction. Within the power electronics hierarchy (IGBT module -> power semiconductor -> power conversion system), modules such as the FF2000R17T2P8 form the switching core of inverters that convert DC to AC and vice versa in industrial drives, wind converters, and traction systems. Key features include the 1700 V collector-emitter rating, 2000 A nominal continuous collector current, half-bridge (2-in-1) topology, and XHP 2 construction with minimized internal stray inductance, which yields clean switching waveforms and reduced turn-off voltage overshoot. The IGBT8 die delivers low VCE(sat) and switching losses, while the EC8 diode provides soft recovery that lowers EMI stress. Short-circuit robustness and the onboard NTC support reliable protection and thermal monitoring. Technically, the trench field-stop structure improves the trade-off between conduction and switching losses, enabling higher efficiency and greater power density than prior chip generations. The scalable XHP 2 multi-package housing simplifies paralleling and platform-level design reuse across a wide power range. Typical applications include wind turbine full-converter systems, medium-voltage and large industrial motor drives, traction inverters, and high-power industrial power supplies, where efficiency, current density, and field reliability dominate the design. Design consideration: gate-drive and thermal design dominate success. Provide adequate driver peak current and galvanic isolation, size the heatsink for module dissipation, and minimize DC-link stray inductance (adding snubbers where needed) to keep turn-off overshoot within the 1700 V rating. This page synthesizes distributor sourcing data, drop-in alternative analysis, and practical high-power design notes not found in the Infineon datasheet; pricing references are as of 2026-09-11 and should be confirmed for volume quotes.
FF450R12KE4 - 1200V 450A Half-Bridge IGBT Module | Infineon
The Infineon FF450R12KE4 is a 1200 V, 450 A half-bridge IGBT power module in the EconoDUAL 62 mm housing, built on TRENCHSTOP IGBT4 trench/field-stop technology with an Emitter Controlled diode. According to Infineon, it is listed at approximately $160.75 per unit with volume pricing from $135.46 to $160.75. An IGBT (Insulated Gate Bipolar Transistor) module combines multiple insulated-gate transistors and freewheeling diodes on an isolated substrate inside a rugged industrial package. IGBT modules occupy the middle of the power semiconductor hierarchy, bridging MOSFETs (lower voltage, higher frequency) and thyristors (highest power, lowest frequency). They are the workhorse switches of motor drives, solar inverters, and UPS systems above roughly 600 V and 100 A. Key features of the FF450R12KE4 include its 1200 V collector-emitter blocking voltage (VCES), 450 A continuous collector current rating, and the Emitter Controlled diode that reduces reverse-recovery losses and voltage overshoot during turn-on. The TRENCHSTOP IGBT4 generation delivers optimized switching behavior for frequency-controlled inverter drives, balancing conduction and switching losses. Technically, the trench/field-stop IGBT4 cell design lowers the saturation voltage for reduced conduction loss while the field-stop layer enables a soft tail current at turn-off, minimizing EMI stress on the inverter. The module supports operating temperatures up to 150 C and carries UL/CSA certification (UL1557 E83336), simplifying end-equipment safety approval. A variant with pre-applied thermal interface material (FF450R12KE4P) and an E-conformance version (FF450R12KE4_E) are available. Typical applications include frequency-controlled industrial inverter drives, solar string inverters, UPS power stages, welding equipment, and traction auxiliaries - anywhere a 690 V-class DC bus requires a robust half-bridge switching stage in the several-hundred-ampere class. Design consideration: verify short-circuit withstand time, gate-drive voltage margin, and DC-link busbar layout to limit parasitic inductance, which directly affects turn-off overshoot and snubber sizing. This page synthesizes distributor pricing, drop-in alternatives within the FF450R12 family, and practical design notes not consolidated in the manufacturer datasheet.
FF450R12KT4HOSA1 - 1200V 450A IGBT Module Half-Bridge | Infineon
The Infineon FF450R12KT4HOSA1 is a 62 mm C-series dual IGBT module that integrates a trench field-stop IGBT4 half-bridge and an Emitter Controlled diode in a chassis-mount package. It is rated for 1200 V collector-emitter voltage, 450 A nominal collector current, and 580 A peak (TC = 100°C, tp = 1 ms) switching capability with a total power dissipation of 2400 W. What is an IGBT module? An Insulated Gate Bipolar Transistor (IGBT) module is a high-power semiconductor switch that combines the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. A half-bridge IGBT module is two such switches in a totem-pole configuration with antiparallel diodes, used as the fundamental building block of voltage-source inverters. IGBT modules sit in the power-electronics hierarchy above discrete IGBTs and below complete inverter stacks, enabling motor drives, UPS systems, and renewable power conversion at the 100 kW to multi-MW scale. Key specifications include a low VCE(sat) of 1.75 V (typical, IC = 450 A, VGE = 15 V, TJ = 25°C) that minimizes conduction losses, a rugged short-circuit capability with SCWT of 10 µs at VCC = 720 V, and a wide operating junction temperature range of -40°C to +150°C. The module uses the well-known 62 mm C-series mechanical footprint with screw-mount power terminals and is also available with pre-applied Thermal Interface Material (TIM) for faster assembly. The device leverages TRENCHSTOP IGBT4 technology from Infineon, which combines a thin-wafer trench field-stop cell with a soft, fast-recovery Emitter Controlled 4 diode. This combination reduces switching losses by roughly 20% versus prior IGBT3 generations while maintaining low EMI through controlled di/dt and dv/dt. The positive temperature coefficient of VCE(sat) also enables easy paralleling for higher-current inverter stages. Typical applications include industrial frequency-controlled motor drives (vector and servo), solar central inverters, three-phase UPS systems, and industrial welding equipment. The 1200 V class is the industry sweet spot for 690 V AC line-connected drives and 1000–1100 V DC-link photovoltaic or battery systems. When designing with this module, ensure the DC-link voltage stays below 1200 V under all transient conditions including reverse-recovery spikes. Provide a low-inductance laminated busbar to control turn-off overshoot, and apply proper thermal paste (or use the TIM-equipped variant) to keep the baseplate-to-heatsink thermal resistance at the datasheet-published minimum. This module is UL/CSA certified under UL 1557 file E83336 for industrial equipment. This page synthesizes distributor pricing, half-bridge topology alternatives (Infineon PrimePACK and EconoDUAL equivalents), and practical DC-link design notes not found in the standalone manufacturer datasheet.
FF600R12ME4 - 1200V 600A Half-Bridge IGBT Module | Infineon
The Infineon FF600R12ME4 is an EconoDUAL3 1200 V, 600 A half-bridge IGBT power module built on TRENCHSTOP Trench/Fieldstop IGBT4 technology with an Emitter Controlled diode and integrated NTC temperature sensor. It is housed in the EconoDUAL3 chassis-mount module package with solder pin terminals, and a PressFIT-mount variation (FF600R12ME4C_B11) is also offered. An IGBT (Insulated Gate Bipolar Transistor) module is a power semiconductor assembly that combines multiple IGBT dies and freewheeling diodes on an isolated substrate within one thermally optimized housing. In the power-conversion hierarchy, it sits above discrete IGBTs and below complete intelligent power modules, forming the switching stage between a DC link and a motor, grid, or load in a power electronics system. Key features include a 1200 V collector-emitter blocking voltage suited to 690 V-class DC links, a 600 A nominal collector current, and Infineon IGBT4 trench/fieldstop cell technology that balances conduction losses (VCE,sat) against switching losses for hard-switched inverters. The Emitter Controlled diode provides soft recovery behavior that reduces turn-on switching stress on the IGBT, and the integrated NTC enables direct junction-side temperature monitoring for protection and derating logic. Technically, the half-bridge topology integrates a high-side and low-side IGBT-diode pair, minimizing stray inductance between switches. The fieldstop vertical structure yields a positive temperature coefficient of VCE,sat, supporting safe paralleling and robust short-circuit behavior as characterized in the Infineon datasheet. Typical applications include industrial variable-frequency drives, solar string inverters, energy storage converters, and welding or UPS power stages where 1200 V/600 A ratings are required. Design consideration: always verify the DC-link voltage headroom against the 1200 V rating including switching overshoot, and use a gate driver matched to IGBT4 parameters such as the Infineon 2SP0115T2 SCALE-2 driver series. This page synthesizes verified datasheet parameters, drop-in family alternatives, application guidance, and cross-reference notes not consolidated in the manufacturer datasheet.
FF800R12KF4 - 1200V 800A Dual IGBT Module | Infineon
The Infineon FF800R12KF4 is a high-power IGBT module rated at 1200V collector-emitter voltage and 800A continuous collector current in a dual-switch (half-bridge) configuration with integrated freewheeling diodes. Housed in a robust chassis-mount isolated-baseplate module package, it delivers up to 5000W power dissipation for demanding industrial power conversion systems. An IGBT (Insulated Gate Bipolar Transistor) module combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. Within the power electronics hierarchy, IGBT modules are the core switching elements of inverters, converters, and motor drives, converting DC to AC and regulating power flow from kilowatt to megawatt scale. Key features include a 1200V VCES rating, 800A DC collector current, 5000W maximum power dissipation, and a 150C maximum junction temperature. The module integrates two IGBTs with anti-parallel fast-recovery diodes, enabling half-bridge topologies with low reverse-recovery losses. Its isolated baseplate provides safe mounting and effective heat extraction. Technically, the FF800R12KF4 utilizes Infineon trench-gate IGBT technology, which reduces VCE(sat) and switching losses for higher system efficiency. The low-inductance package design limits voltage overshoot during fast switching, and the module supports parallel operation for scalable higher-current designs. Typical applications include industrial motor drives, wind turbine converters, UPS systems, and welding equipment. The 1200V/800A class ratings make it well suited for high-power inverters and medium-voltage drive front ends. When designing with this module, provide proper gate drive circuitry (typically +15V/-15V), snubber networks to control switching transients, and adequate heatsinking to keep junction temperature within the 150C limit.