IR-Sender & -Empfänger
Produkte (2)
TSHA4401 - 875nm GaAlAs IR Emitter, 3mm T-1 | Vishay
The Vishay TSHA4401 is a high-efficiency GaAlAs (Gallium Aluminum Arsenide) infrared emitting diode molded in a clear, untinted 3 mm (T-1) through-hole package with a 40-degree viewing angle. Built on GaAlAs-on-GaAlAs heterojunction technology, it emits at a peak wavelength of 875 nm and delivers typical radiant intensity of 16 mW/sr at 100 mA forward current, with a maximum forward current rating of 100 mA and a typical forward voltage of 1.5 V. The device supports high-speed switching with typical rise and fall times of 600 ns each, making it suitable for pulsed IR communication, optical encoders, and reflective sensors. An infrared emitting diode (IRED) is a semiconductor light source that emits near-infrared radiation (typically 700 nm to 1100 nm) when forward-biased. Unlike visible-light LEDs that target human-perceivable wavelengths, IREDs are paired with photodetectors or phototransistors to create optoelectronic links. In the component hierarchy, the TSHA4401 sits within optoelectronics -> LEDs -> infrared emitters -> GaAlAs IREDs. The 875 nm wavelength is particularly favored because it exhibits low absorption in standard glass, enabling operation through transmissive panes in industrial enclosures, automotive windows, and household appliances. Key differentiating features include high radiant intensity (16 mW/sr typical at 100 mA), narrow 40-degree beam angle for focused emission, fast switching with 600 ns rise/fall times, and a wide operating temperature range of -40C to +85C. Compared to standard GaAs-on-GaAs emitters at similar drive currents, the GaAlAs construction typically delivers several times the radiant intensity, allowing longer link distances or lower drive current for equivalent optical output. The 875 nm wavelength is matched to common silicon photodetectors (BPW34, BPV10) whose peak spectral response lies in the 850-950 nm band, maximizing receiver sensitivity without requiring special infrared filters. Architecturally, the TSHA4401 uses a double-heterojunction GaAlAs active region sandwiched between wider-bandgap AlGaAs cladding layers, which confines carriers to the active zone and boosts internal quantum efficiency. The molded epoxy lens is spectrally matched to the 875 nm emission and forms a narrow optical aperture that defines the 40-degree half-angle. The device is electrically a standard two-terminal diode - anode and cathode through radial leads - with no integrated driver, ESD clamp, or current-limiting resistor; the application circuit must provide a current source or series resistor. Typical applications include IR data transmission (IrDA-like links), optical encoders and interrupter modules, reflective object sensors, industrial remote controls, smoke and particulate detectors, and automotive interior sensing through glass panels. The 875 nm wavelength also aligns with night-vision camera sensitivity bands used in surveillance and machine vision. When designing with the TSHA4401, drive the LED with a controlled current source (or a resistor calculated from (Vsupply - Vf)/If) and add a small NPN transistor or MOSFET for high-frequency modulation - direct logic-level drive without current limiting will damage the junction. Decoupling the supply near the driver reduces conducted noise on nearby analog stages. For long-range links, pulse the LED at 100 mA peak rather than continuous DC to maximize radiant intensity while staying within the average power dissipation budget of 180 mW.
TSHA4401-AS12Z - 875nm GaAlAs IR Emitter, 3mm T-1 | Vishay
The Vishay TSHA4401-AS12Z is a high-efficiency gallium-aluminum-arsenide (GaAlAs) infrared emitting diode housed in a 3 mm (T-1) tinted diffused plastic package, with through-hole radial leads. It emits at a peak wavelength of 875 nm, delivers a typical radiant intensity of 16 mW/sr at 100 mA DC forward current, and supports a continuous forward current up to 100 mA with a forward voltage of approximately 1.5 V. The -AS12Z suffix designates the tape-and-reel lead-forming option, and the half-power emission angle is specified at ±20° (±40° total). An infrared emitter (IRED) is a semiconductor optoelectronic device that converts electrical current into near-infrared light, typically used in pairs with photodetectors or phototransistors to form an optical link. Within the optoelectronics hierarchy, an IRED falls under LEDs and Optoelectronics, with hypernyms IR LED, infrared emitter, GaAlAs IRED, and narrow-spectrum photo source. IR emitters are foundational building blocks for non-contact object detection, position sensing, data communication over light, and barrier/through-beam switches. The 875 nm wavelength is particularly chosen for its low attenuation through standard soda-lime glass, enabling applications where the emitter and detector are placed behind glass panes. Key features of the TSHA4401-AS12Z include a typical radiant power efficiency that is markedly higher than conventional GaAs IR emitters of its generation, a hermetically robust molded plastic package with viewing angle of ±20°, and fast switching speed suitable for pulsed modulation at tens of kHz. The 1.5 V typical Vf at 100 mA allows the device to be driven directly from low-voltage rails (3.3 V or 5 V) through a simple series resistor. Operating temperature spans -40 °C to +85 °C, covering industrial and consumer environments. Typical applications for this part include IR data transmission (IrDA-style links and remote-control carrier modulation), reflective and through-beam object sensors, industrial counters and tachometers, photo-interrupter modules, and glass-pane-barrier intrusion detectors. The narrow ±20° beam suits point-to-point links where off-axis rejection of ambient light is critical. When designing with this emitter, drive the LED with a constant-current source or a properly sized series resistor. Estimate the resistor value as R = (VCC - Vf) / If; for VCC = 5 V, Vf = 1.5 V, and If = 100 mA, R ≈ 35 Ω. A 100 nF bypass capacitor across the supply improves noise immunity. For pulsed operation, respect the peak forward current and duty cycle limits stated in the manufacturer datasheet.