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BTS3035TFATMA1 - 5A 12V Low-Side Switch | Infineon HITFET
The Infineon BTS3035TFATMA1 is a single-channel, N-channel low-side power switch rated at 5A continuous drain current with 30 mOhm typical on-resistance, housed in a 3-pin PG-TO252-3-313 (DPAK) surface-mount package. It belongs to the Infineon HITFET family of protected low-side switches, designed for 12V automotive and industrial load driving with integrated ESD protection, thermal shutdown, overcurrent limitation, and short-circuit ruggedness. A low-side switch is a type of power semiconductor that controls a load by switching the connection between the load and ground, as opposed to a high-side switch that switches the supply rail. Low-side switches sit in the power management hierarchy beneath high-side drivers, MOSFETs, and solid-state relays, and are commonly used to drive resistive or inductive loads such as lamps, solenoids, valves, and small motors where the return path can be safely switched. The BTS3035TF uses an N-channel MOSFET as the pass element, providing the lowest possible RDS(on) per unit silicon area compared to P-channel equivalents in the same package. Key features of the BTS3035TF include a 40V load-dump tolerant drain-source voltage, 5A continuous / pulsed current capability, integrated reverse battery protection, status feedback, and a logic-level CMOS-compatible input that interfaces directly with 3.3V or 5V microcontrollers. The device operates across -40C to +150C junction temperature, suiting underhood automotive modules and harsh-environment industrial applications. The BTS3035TF is part of the HITFET +12V family, which uses a vertical N-channel DMOS process and integrates fault detection (over-temperature, over-current, short to ground/battery) into a single die. Compared to discrete MOSFET solutions, the integrated protections eliminate the need for external sense resistors, gate drivers, and discrete TVS diodes, reducing PCB area and improving reliability. The TO252 package provides a low thermal resistance path via the drain tab, allowing sustained 5A switching without external heatsinking in typical PCB layouts. Typical applications include automotive body electronics (interior lighting, seat controls, door modules), industrial PLC outputs, HVAC actuators, 24V/12V relay replacement, and general-purpose low-side load switching where fault diagnostics and protection are required by the system specification. When designing with this part, ensure the input pin is pulled to a defined logic level during MCU reset to avoid floating-gate activation. The status flag output requires a pull-up resistor; verify the host MCU's input voltage tolerance against the open-drain status output voltage level. Adequate copper area on the drain tab is essential for thermal performance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone provides.
BTS3046SDRATMA1 - 3.6A Smart Low-Side Switch HITFET | Infineon
The Infineon BTS3046SDRATMA1 is a single-channel, low-side N-channel MOSFET power switch from Infineon's HITFET (High-Integrated Temperature-protected FET) family, rated for 3.6A continuous load current with a typical on-state resistance of 95 mOhm (0.095 ohm) in a PG-TO252-3-11 (DPAK) surface-mount package. It is monolithically integrated with a vertical power FET and embedded protective functions including over-temperature shutdown, short-circuit protection, over-current limiting, over-voltage clamping (at Vbb), and ESD protection, making it a robust drop-in replacement for discrete low-side switch implementations. A smart low-side power switch is an intelligent semiconductor that sits between a microcontroller GPIO and a grounded load (relay coil, solenoid, LED string, lamp, or small motor), providing both load-driving capability and on-die protection that would otherwise require multiple discrete components. Low-side switches are particularly common in 12V automotive body electronics, where the load is referenced to battery positive and the switch only needs to sink current to ground; this simplifies wiring, reduces wiring-harness cost, and enables PWM-based dimming or speed control. As part of the broader power management IC hierarchy, the BTS3046SDRATMA1 sits below high-side switches and H-bridges in functionality but excels in cost-sensitive single-channel applications. Key features include an operating voltage range of approximately 4.5 V to 42 V, 3.6A continuous drain current capability, very low standby current, CMOS-compatible input with internal pull-down, status feedback, and integrated over-voltage clamp. The N-channel vertical FET architecture delivers low Rds(on) per unit area while keeping thermal resistance manageable in the DPAK package, allowing sustained 3.6A output without an external heatsink on properly designed 1-2 oz copper pours. Typical applications include automotive body control modules, junction-box relays and lamp drivers, ECU-controlled resistive and inductive loads, HVAC blower and fan control, industrial 24V solenoid and valve drivers, and any 12V/24V ground-referenced load requiring embedded protection. The AEC-Q100 automotive qualification (where applicable to the part variant) supports deployment in passenger compartment and under-hood environments. Designers should pay attention to inductive-load flyback handling: although the device integrates over-voltage clamping, persistent inductive kickback above the clamp rating will degrade reliability. Add a TVS or free-wheeling diode for highly inductive loads such as solenoids and motors. The status pin requires a pull-up resistor to logic supply for proper fault signaling in the application firmware. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS3050EJXUMA1 - 50mΩ 4A Smart Low-Side Switch | Infineon
The Infineon BTS3050EJXUMA1 is a 50 mΩ single-channel smart low-side power switch in a PG-TDSO-8-31 (TDSO8-31) surface-mount package, rated for 4 A continuous load current and 12 V automotive supply rails. Built around an N-channel vertical power MOSFET, it integrates load-current limiting, ESD protection on the input pin, and an auto-restart thermal shutdown into a single die, providing a protected interface between a microcontroller GPIO and a resistive or inductive ground-referenced load. A Smart Low-Side Switch (SLS) is a type of power distribution switch — itself a category of power management IC — that switches the negative (ground) side of a load rather than the positive supply. In the power management taxonomy, this places the BTS3050EJXUMA1 as: power distribution switch -> load switch -> smart low-side switch -> power semiconductor. SLS devices are widely used in automotive body electronics where high-side driving is impractical or where ground-side PWM dimming (for example, LED tail lamps) is the desired topology. Key features include a typical on-state resistance (RDS(on)) of 50 mΩ at 25 °C, integrated over-temperature protection with auto-restart behavior, ESD protection on the IN (Source / Ground) pin, and current-limit foldback under overload. The PG-TDSO-8-31 package provides an exposed tab for thermal dissipation, and the device is qualified for 12 V automotive board-net environments with transient tolerance to typical load-dump events when paired with external TVS protection. The BTS3050EJXUMA1 is built on Infineon's proven HITFET™ +12V process family, combining a vertical N-channel DMOS output stage with CMOS control logic on the same die. This monolithic integration minimizes propagation delay from IN to OUT and eliminates the need for an external gate drive, allowing the part to be driven directly from a 3.3 V or 5 V microcontroller output. The smart-protection block monitors junction temperature via an on-die sensor and latches/restarts the output autonomously, freeing the host MCU from fault-handling routines. Typical applications include automotive LED lighting modules (rear lamps, interior illumination), relay and solenoid replacement, small DC motor drivers for HVAC flaps and door mirrors, and general 12 V resistive load switching in body control modules (BCMs). The device is particularly suited to PWM-dimmed lighting because its low-side topology and fast switching allow direct ground-referenced modulation without bootstrap capacitors. When designing with the BTS3050EJXUMA1, observe the maximum RDS(on) derating at elevated junction temperature and ensure the exposed pad is soldered to a sufficient copper pour to keep Tj below 150 °C under worst-case ambient and load conditions. Decouple the load supply with a local ceramic capacitor close to the device's Vbb pin to absorb load-dump and reverse-battery transients.
BTS3050TFATMA1 - 4A Smart Low-Side Power Switch HITFET | Infineon
The Infineon BTS3050TFATMA1 is a 4 A N-channel smart low-side power switch in the HITFET family, housed in a PG-TO252-3-313 (TO-252-3 / DPAK) surface-mount package. It integrates a single N-channel MOSFET with 44 mOhm typical on-resistance, logic-level input, and comprehensive protection including over-current, over-temperature, over-voltage, and ESD protection. The part is AEC-Q100 qualified for automotive applications and supports load voltages up to 5.5 V with continuous drain current up to 4 A. A smart low-side power switch (also called an intelligent FET or HITFET) is a discrete-or-IC power switch that combines a MOSFET with on-die protection, status feedback, and a logic-level gate driver. Low-side switches sit between the load and ground, switching the return path, and are widely used in automotive body electronics, industrial control, and any application needing protected switching of resistive, inductive, or lamp loads. Compared to a discrete MOSFET, the integrated switch eliminates gate drive complexity and provides fault diagnostics that would otherwise require external comparators and current-sense resistors. Key features of the BTS3050TFATMA1 include 44 mOhm RDS(on) at 25 C, 4 A continuous drain current, logic-level CMOS-compatible input, status flag output, and built-in clamping for inductive loads. The integrated protective functions include current limitation, thermal shutdown with auto-restart, over-voltage protection on Vbb, and reverse battery protection on Vbb. The HITFET+ technology from Infineon combines a vertical MOSFET with smart analog protection on the same die, reducing PCB area and BOM count versus discrete solutions. The BTS3050TFATMA1 uses Infineon's vertical DMOS process optimized for 12 V automotive load switching. Its logic-level input thresholds (CMOS-compatible) allow direct connection to 3.3 V or 5 V microcontrollers without level translation. The status feedback pin reports fault conditions to the host MCU, enabling centralized diagnostics over CAN or LIN in body control modules. Typical applications include automotive body electronics (door lock motors, seat adjustment, mirror folding), LED lighting modules (interior/exterior lamps, dimming control), relay and solenoid replacement, industrial PLC outputs, and any 12 V or 24 V load switching that benefits from integrated protection and diagnostics. When designing with the BTS3050TFATMA1, place a reverse-battery protection diode on Vbb or use a series resistor to limit inrush. Decoupling capacitors of at least 100 nF must be placed close to the Vbb pin to absorb load-dump transients. The thermal pad must be soldered to a sufficient copper pour to keep junction temperature below the 150 C shutdown threshold. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB thermal notes not found in the manufacturer datasheet.
BTS3060TFATMA1 - 3A 42V Smart Low-Side Switch | Infineon
The Infineon BTS3060TFATMA1 is a 50 mΩ single-channel Smart Low-Side Power Switch housed in a PG-TO252-3 (DPAK) surface-mount package, designed and qualified for 12V automotive applications. The integrated N-channel vertical power MOSFET delivers up to 3A continuous load current, and the device is monolithically integrated with embedded protective functions that simplify the design of robust ECU outputs. The -TFATMA1 suffix indicates Tape & Reel packaging for high-volume SMT assembly. A low-side power switch is a semiconductor that connects a load to ground when activated; by placing the switch between the load and ground rather than between supply and load, the device simplifies wiring, eases fault detection, and keeps load-side wiring at the battery voltage when off. The BTS3060TF belongs to Infineon's HITFET family, which extends classic low-side switches with monolithic intelligence such as overcurrent, overtemperature, and overvoltage protection, plus diagnostic feedback. Key features include a 42V maximum load supply rating, 50 mΩ typical on-resistance at 25°C, status feedback output, and AEC-Q100 automotive qualification. The logic-level gate input is compatible with 3.3V and 5V microcontrollers, and the integrated charge pump drives the N-channel MOSFET efficiently even at low supply voltages. The PG-TO252-3 (DPAK) package offers a low thermal resistance that supports sustained 3A operation with proper PCB copper area. Typical applications include automotive body electronics (door lock actuators, seat heaters, mirror adjusters), resistive and inductive load driving (relays, solenoids, lamps), 24V truck and 12V passenger car subsystems, and industrial low-side switching where diagnostic feedback and protection are required. The monolithically integrated protection reduces the external component count, which is critical for ECU designs that must meet tight cost and reliability targets. When designing with this device, ensure the PCB copper area under the DPAK tab is sized to keep the junction temperature within the -40°C to +150°C operating range under worst-case load. The status pin requires a pull-up resistor and provides diagnostic feedback for open-load, overtemperature, and short-circuit events. Avoid exceeding 42V on the drain pin even during load-dump transients above the rated voltage. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB design notes not consolidated on the manufacturer product page.
BTS3104SDRATMA1 - 2A 60V Low-Side HITFET Switch | Infineon
The Infineon BTS3104SDRATMA1 is a single-channel, N-channel, low-side MOSFET power switch in a PG-TO252-3-11 (DPAK) surface-mount package, rated for 2A continuous load current and 60V drain-to-source breakdown. As part of Infineon's HITFET (High-Integrated Temperature-protected FET) SMART Low-Side Power Switch family, the device monolithically integrates a vertical N-channel power FET with embedded protection functions including overtemperature, overcurrent, short-circuit, overvoltage (at the output / load-dump), and ESD protection. A low-side power switch is a discrete or integrated semiconductor that controls a load by interrupting the return (ground) path on the low side of the supply rail, as opposed to a high-side switch which interrupts the positive supply. Low-side switches sit within the broader hierarchy of power management ICs and discrete MOSFETs, offering the simplest, lowest-cost way to drive resistive or inductive loads such as lamps, relays, solenoids, and small DC motors in automotive and industrial systems. The HITFET family extends this concept by co-integrating diagnostic and self-protection features so designers do not need to add discrete fuses, sense resistors, or thermal cutoffs. Key specifications of the BTS3104SDRATMA1 include a 60V drain-to-source voltage rating (V_DS), 2A continuous drain current, very low standby current, and CMOS-compatible logic-level input on the IN pin. The device is qualified to AEC-Q100 for automotive use and is offered in a halogen-free, RoHS-compliant PG-TO252-3-11 package suitable for automated SMT assembly. Architecturally, the BTS3104SDR uses a vertical N-channel DMOS output structure that delivers low R_DS(on) per unit area and is paired on-chip with a charge pump, gate driver, current-sense block, and thermal shutdown circuit. Compared with a discrete N-MOSFET plus fuse design, the integrated approach reduces PCB area, eliminates external protection components, and provides latched diagnostic feedback to the microcontroller. The internal charge pump holds the gate high even at low V_IN, ensuring predictable R_DS(on) across cold-crank and load-dump transients typical of 12V automotive boards. Typical applications include automotive body electronics (e.g., driving lamps, LED modules, and small motors), industrial 24V PLC outputs, relay and solenoid replacement, and any system requiring a protected low-side driver with diagnostic feedback. The 60V V_DS rating also supports 24V industrial buses and trucks (24V nominal) with sufficient margin against load-dump. When designing with this part, place a low-ESR ceramic bypass capacitor close to the V_IN pin and verify that the steady-state power dissipation (I_load^2 x R_DS(on)) stays within the PG-TO252-3-11 thermal envelope (approximately 1.5W on 1oz copper, 2oz copper improves this). For inductive loads, add a freewheeling diode across the load to clamp turn-off transients even though the FET has internal avalanche ruggedness. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in same-package alternatives, and practical design notes for the BTS3104SDRATMA1 that are not aggregated in a single manufacturer datasheet view.
BTS3110NHUMA1 - 42V 1.4A Smart Low-Side Switch | Infineon
The Infineon BTS3110NHUMA1 is a 42 V N-channel smart low-side power switch in a PG-SOT223-4 (SOT-223-4) surface-mount package, providing 1.4 A continuous drain current and an on-state resistance of 200 mOhm typical. It is a member of Infineon's Classic HITFET family designed as a microcontroller-compatible power switch for 12 V DC automotive and industrial applications, replacing electromechanical relays and discrete switching circuitry. A smart low-side switch is an integrated power semiconductor that combines an N-channel MOSFET output stage with on-chip protection and diagnostic logic in a single package. Functionally it sits below the broader power MOSFET category and above the simple discrete switch level in the power management hierarchy, allowing logic-level inputs from a microcontroller to switch grounded loads (lamps, solenoids, relays, motors) with full ESD, thermal, short-circuit, and over-load protection handled internally. Key features include 42 V maximum load-dump-rated drain-to-source voltage, 200 mOhm typical on-resistance at 25 C, integrated over-temperature shutdown with auto-restart, over-load current limiting, ESD protection on the input pin, and open-drain status flag output. The logic-level input is TTL/CMOS compatible, allowing direct connection to 3.3 V or 5 V microcontroller GPIO without driver circuitry. The device is built on Infineon's planar N-channel DMOS technology with a vertical power MOSFET output stage, monolithic gate driver, and on-die protection circuitry including active current limiting and thermal shutdown that latches off at excessive junction temperature. The integrated charge pump provides a stable gate drive across the full 12 V battery operating range including cold-crank transients down to 6 V. Typical applications include 12 V automotive body electronics (lamp drivers, LED drivers, solenoid drivers, small motor drivers), industrial 24 V PLC switching, and resistive or inductive loads up to 1.4 A continuous. It is especially well suited to replace automotive relays where PCB real estate, switching reliability, and diagnostic feedback are required. When designing with this part, ensure that inductive loads include an external free-wheeling diode or that the part is used within its avalanche-rated energy limits. The PG-SOT223-4 package requires a copper land pattern sized to the drain tab for adequate heatsinking at sustained high-current operation. This page synthesizes distributor pricing, drop-in cross-brand and same-family alternatives, application guidance, and design notes not found in the manufacturer datasheet alone, providing engineering value beyond a simple parametric listing.
BTS3118NHUMA1 - 2.17A Smart Low-Side Switch | Infineon
The Infineon BTS3118NHUMA1 is a 2.17 A N-channel vertical power FET in Smart SIPMOS technology, housed in a 4-pin PG-SOT223-4 surface-mount package, designed as a logic-level low-side power switch for 12 V DC applications. It combines an N-channel MOSFET with an integrated gate-driving unit and embedded protection functions, including ESD input protection, thermal shutdown with latch, overload protection, short-circuit protection, overvoltage protection, and analog current limitation. A low-side switch is a power distribution topology in which the MOSFET sits between the load and ground, switching the return path rather than the high-side supply. Low-side switches sit in the broader power management hierarchy: load switch -> power distribution switch -> smart switch with diagnostics -> power management IC. They are widely used to replace electromechanical relays and discrete MOSFET-plus-driver circuits, providing a micro-controller-compatible interface with built-in protection that a discrete design cannot match. Key features include a logic-level input that interfaces directly with 3.3 V and 5 V micro-controllers, an operating voltage range of 6 V to 18 V nominal (with transient overvoltage protection), a typical on-state resistance (RDS(on)) in the tens of milliohm range at room temperature, and a current limit in the 2 A region. The HITFET family integrates the gate driver, protection logic, and power stage into a single die, simplifying PCB layout and reducing BOM count. The BTS3118NHUMA1 uses a vertical SIPMOS process that places the drain on the package tab (pins 2 and 4 are tied to the tab), allowing the PCB copper pad under the tab to serve as a heatsink for moderate continuous loads. The protection logic includes a thermal latch that disables the output until power is cycled, preventing fault-induced thermal runaway. Typical applications include body controller modules for automotive lighting (interior lights, dashboard illumination, dimming functions), 12 V relay replacement in industrial control panels, and any 12 V resistive, inductive, or capacitive load in switching or linear mode. The SOT-223 footprint is industry-standard for 1 A to 3 A low-side switches. When designing with this part, observe that pins 2 and 4 are internally connected to the drain and to the package tab; PCB copper area under the tab is critical for thermal performance at sustained loads above 1.5 A. A 100 nF ceramic bypass capacitor close to the Vbb pin is recommended to handle inductive kick-back and supply transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTS3125TFATMA1 - 2A N-Channel Smart Power Switch | Infineon
The Infineon BTS3125TFATMA1 is a single-channel, N-channel low-side power switch belonging to Infineon's HITFET+ family of protected smart power switches. It delivers up to 2 A continuous load current at 5 V nominal supply in a surface-mount PG-TO252-3-313 (DPAK equivalent) package with an integrated tab for thermal dissipation. The device integrates a vertical N-channel MOSFET driver with on-resistance of approximately 240 mΩ, plus built-in protection features including over-current, over-temperature, short-circuit, over-voltage and ESD protection, all packaged in an SC-63 / DPAK form factor. HITFET+ (High Integration Temperature protected FET) is Infineon's category of smart low-side switches; the BTS3125TF family combines a logic-level MOSFET gate driver with comprehensive diagnostic feedback so designers can drive resistive, capacitive or inductive loads without the discrete components traditionally required for protection and status feedback. The BTS3125TFATMA1 specifically operates from a 5 V logic supply rail with input compatibility for 3.3 V and 5 V microcontroller GPIO, replacing electromechanical relays and discrete MOSFET+resistor+diode solutions with a single protected IC. Key specifications include 2 A continuous drain current, 250 mΩ typical RDS(on), logic-level input, 40 V load-dump transient protection, and a status flag output that signals fault conditions (over-temperature, short-circuit, open load). The integrated thermal shutdown typically engages around 150°C, and the device provides automatic restart after a fault clears. The PG-TO252-3-313 package offers a thermal resistance of approximately 80 °C/W which, combined with the tab, supports continuous 2 A operation without a dedicated external heatsink when properly PCB-mounted. Typical applications include driving 12 V automotive lamps, solenoids, valves, relays, LED arrays, and small motors in body-control modules and industrial actuators. The wide operating range (typically 5 V to 28 V continuous, with 40 V transient) suits both 12 V automotive and 24 V industrial bus architectures. Built-in protection allows direct connection to wiring harnesses without additional protection circuits on the board. When designing with this part, place the exposed tab on a copper pour sized to limit junction temperature rise; at 2 A load and 13.5 V supply, power dissipation reaches roughly 0.96 W, and a 1 cm² copper area is typically adequate for continuous operation in still air. Ensure the input pin has a clean logic-level signal and is not left floating during power-up.
BTS3134NHUMA1 - 42V 3A Smart Low-Side Power Switch | Infineon
The Infineon BTS3134NHUMA1 is a 42 V, 3 A single-channel N-channel smart low-side power switch housed in a 4-pin (3+Tab) PG-SOT223-4 surface-mount package. It integrates a SIPMOS output stage with on-chip protection and a logic-level gate drive, delivering a 1:1 power switch/driver with a 3 A continuous current rating. The device is qualified to AEC-Q100 for automotive environments and ships in Tape & Reel packaging. A smart low-side power switch is a power distribution switch that controls a load (relay, solenoid, lamp, LED string) by pulling the low side to ground through an internal N-channel MOSFET when activated by a logic-level input. It is functionally and architecturally equivalent to a discrete N-channel MOSFET plus gate driver plus protection circuitry, integrated into a single IC. Smart low-side switches sit within the broader hierarchy of power distribution switches, which in turn belong to the power management IC family. Key features include an operating supply range up to 42 V, an R_DS(on) of approximately 50 mΩ typical, integrated over-current, over-temperature, over-voltage, and ESD protection, plus a status flag output for fault feedback. The 3 A continuous drain current makes it well-suited to automotive body and chassis loads such as lamps, relays, and small motors. The exposed tab of the PG-SOT223-4 package acts as a thermal pad, allowing the part to dissipate the load current without external heatsinking at moderate duty cycles. The BTS3134NHUMA1 uses Infineon's SIPMOS technology - a vertical power MOSFET process optimized for low-voltage, high-current switching with integrated CMOS control logic. This monolithic integration eliminates the need for a discrete gate driver and external protection circuitry, reducing PCB area and improving reliability. The AEC-Q100 qualification ensures the part meets automotive stress-test requirements for temperature, humidity, and vibration. Typical applications include automotive body electronics such as lamp drivers, relay replacement, solenoid and valve control, LED driver circuits, and general 12 V / 24 V automotive load switching. The 42 V maximum rating also provides headroom for 24 V truck and industrial bus systems with load-dump transients. When designing with this device, ensure that the input pin is driven from a logic-level source (3.3 V or 5 V CMOS) and that the exposed tab is soldered to a sufficient copper pour (typically 1 square inch minimum) to keep junction temperature within the -40°C to +150°C operating range under worst-case load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer product page alone.
BTS3205NHUSA1 - 42V 0.7Ω Low-Side HITFET Switch | Infineon
The Infineon BTS3205NHUSA1 is a 42 V single-channel N-channel low-side power switch from the Classic HITFET (High-Integrated Temperature-protected FET) family, housed in a PG-SOT223-4 (3+Tab) surface-mount package. It integrates an N-channel power MOSFET with 0.7 Ω typical RDS(on), embedded protection circuitry, and is rated for 350 mA continuous load current. The BTS3205NHUSA1 provides over-temperature, short-circuit, over-current, over-voltage, and ESD protection, targeting automotive relay and solenoid drive applications. A low-side switch is a type of power distribution switch that places the MOSFET between the load and ground, sinking current when activated. Low-side switches belong to the broader category of smart power switches, which sit in the hierarchy: power switch -> load driver -> power management IC -> semiconductor. Compared to high-side switches, low-side switches are simpler to drive (gate referenced to ground), more efficient (no charge pump required), and lower cost - making them the standard choice for resistive and inductive loads whose negative terminal can safely connect to chassis ground, which is typical in automotive 12V systems. Key differentiating specifications include 42 V maximum load-dump-rated operating voltage, 0.7 Ω typical on-resistance, integrated thermal shutdown with auto-restart, and automotive AEC-Q100 qualification. The PG-SOT223-4 package exposes the drain tab for direct PCB heatsinking, achieving a low thermal resistance suitable for continuous 350 mA operation. An internal clamp handles inductive load turn-off, eliminating the need for an external freewheeling diode in most relay and solenoid circuits. The BTS3205N die combines a vertical N-channel DMOS output stage with CMOS-compatible logic input, allowing direct connection to 3.3 V or 5 V microcontrollers. Internal charge management provides fast turn-on/turn-off transitions, minimizing switching losses. The device operates across -40 °C to +150 °C junction temperature, supporting underhood automotive environments where ambient temperatures regularly exceed 125 °C. Typical applications include automotive relay replacement (direct driving of lamps, valves, and motors), body control modules, HVAC blower and fan control, central locking actuators, and industrial 24V solenoid drivers. The 42 V rating comfortably handles 12V and 24V automotive buses including load-dump transients per ISO 7637-2. When designing with the BTS3205NHUSA1, route the tab (drain) to a copper pour large enough to keep junction temperature below 150 °C under worst-case load. The logic input pin requires no external pull-up or driver - connect directly to a GPIO. For inductive loads above 1 mH, verify the internal clamp energy rating against the load's stored energy (½LI²) to prevent avalanche overstress. This page synthesizes distributor pricing, drop-in alternatives from the Infineon HITFET family, and practical PCB design guidance not found in the manufacturer datasheet - enabling faster component selection for automotive and industrial low-side switching designs.
BTS3256DAUMA1 - 7.5A Smart Low-Side Switch | Infineon HITFET
The Infineon BTS3256DAUMA1 is a 7.5 A smart low-side N-channel power switch from the HITFET family, housed in a PG-TO252-5-11 (DPAK-5) surface-mount package. It integrates a vertical N-channel MOSFET with comprehensive on-chip protection including thermal shutdown, overcurrent limiting, overvoltage clamp, and ESD protection. The device is qualified for automotive applications and provides diagnostic feedback through a status flag pin, enabling fault detection in body control modules, solenoid drivers, and LED lighting systems. A smart low-side power switch is an integrated circuit that replaces a discrete MOSFET plus discrete protection circuitry by combining the power transistor, gate driver, current sensing, and protection logic in a single package. It sits in the power distribution hierarchy between a microcontroller's GPIO and a ground-referenced load such as a relay coil, solenoid valve, lamp filament, or heating element. By switching on the low side, the load is grounded to complete the circuit when the FET turns on, allowing the load to operate from a positive supply rail. Smart low-side switches reduce PCB area, improve reliability, and provide built-in diagnostic and protective features that discrete implementations cannot match. Key features of the BTS3256DAUMA1 include a typical on-state resistance of approximately 50 mOhm, a continuous drain current of 7.5 A, and an operating voltage range suited to 12 V automotive systems. The integrated clamp circuit handles inductive load turn-off safely, while the thermal protection shuts the channel down when junction temperature exceeds safe limits. The status output allows the ECU to distinguish between normal operation, short-to-ground, short-to-battery, and open-load conditions, supporting ISO 26262 functional safety requirements. The BTS3256DAUMA1 uses Infineon's proprietary HITFET technology, which combines a low-RDS(on) vertical DMOS output stage with CMOS control logic. This architecture achieves very low quiescent current in standby while delivering high peak current capability for inrush loads such as cold filament lamps or capacitive loads. The 5-pin DPAK package provides an exposed thermal pad for low thermal resistance, allowing sustained high current operation without external heatsinking in typical automotive environments. Typical applications include automotive body electronics, solenoid and valve drivers, LED lighting modules, power distribution switches, HVAC flap motors, and small DC motor control. The device is also widely used in 24 V truck and commercial vehicle systems where its voltage rating provides additional margin. When designing with the BTS3256DAUMA1, place a 100 nF ceramic decoupling capacitor close to the Vbb supply pin and ensure the exposed pad has sufficient copper pour (at least 1 square centimeter) for thermal dissipation. The status pin requires a pull-up resistor and should be monitored by the MCU for fault handling. Always respect the maximum junction temperature of 150 C and derate current accordingly at elevated ambient temperatures. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with all figures referenced as of 2026-09-15.
BTS3405GXUMA1 - Dual N-Ch 350mA Low-Side Switch | Infineon
The Infineon BTS3405GXUMA1 is a dual-channel N-channel low-side power switch in a PG-DSO-8 package, delivering 350 mA continuous current per channel (550 mA peak per Mouser listing) with an on-state resistance of 0.9 Ω. Classified as a HITFET (High-Integration FET) smart low-side switch, it integrates a power MOSFET, gate driver, and protection circuitry into a single 8-pin SOIC footprint. Key features include integrated overcurrent protection, short-circuit protection, over-temperature protection, and over-voltage protection on each channel, making it suitable for harsh automotive and industrial environments. The device operates across -40°C to +150°C junction temperature and supports logic-level input signals for direct microcontroller interface. The BTS3405GXUMA1 belongs to Infineon's HITFET family of low-side switches, which sit within the broader power management IC hierarchy: low-side switch -> smart switch -> power distribution switch -> power management IC. A low-side switch controls load current by switching the ground return path rather than the high-side supply, simplifying gate drive requirements and reducing cost compared to high-side switches. This topology is well-suited for resistive, inductive, and capacitive loads where the load can safely share a common return with the system ground. Typical applications include automotive relay and solenoid replacement, LED driver circuits, small DC motor control, and general-purpose load switching in body electronics modules. The integrated protection features eliminate the need for discrete fuses or PTCs, reducing both BOM count and PCB area while improving system reliability. The PG-DSO-8 package provides a thermally enhanced pad-down footprint for improved power dissipation. When designing with this device, verify that the load's inrush current does not exceed the trip threshold of the overcurrent protection, which typically activates within microseconds. For inductive loads, add a freewheeling diode across the load to clamp the back-EMF and protect the switch from avalanche breakdown. The logic inputs are CMOS-compatible, but ensure that unused input pins are tied to a defined logic level (not left floating) to prevent unwanted turn-on from noise coupling.
BTS3800SLHTSA1 - 350mA Smart Low-Side Switch, 0.8Ω | Infineon
The Infineon BTS3800SLHTSA1 is a single-channel, N-channel MOSFET-based low-side power switch rated at 350 mA continuous load current and 0.8 Ω typical on-resistance, housed in a 5-pin PG-SCT595 surface-mount package. Part of Infineon's Classic HITFET family, the device is monolithically integrated with a vertical power MOSFET and a full suite of embedded protective functions, and is qualified to AEC-Q100 for automotive and harsh industrial environments. A smart low-side switch is a discrete-replacement IC that sits between a microcontroller GPIO and a ground-referenced load such as a relay, solenoid, valve, or LED string. By moving the high-current path off the MCU and onto the switch, the design gains fault isolation, accurate current limiting, and thermal protection. The BTS3800SL belongs to the broader power-management category, specifically the low-side driver / power-distribution switch sub-category that complements high-side PROFET devices in body-control modules. Key features include 41 V drain-to-source voltage rating for harsh load-dump transients, an operating input voltage range of approximately 2.7 V to 5.5 V at the logic/IN pin, typical 0.8 Ω R_DS(on) at 25 °C, integrated overtemperature shutdown with auto-restart, overcurrent limitation, and overvoltage clamping on the output. The 5-pin PG-SCT595 (gull-wing) footprint occupies roughly 6.5 mm × 4.0 mm on the PCB and supports standard reflow profiles. The device is built on Infineon's automotive-qualified smart-power BCDMOS process, which co-integrates the analog control block, charge pump, and the vertical N-channel output DMOS into one die. This monolithic integration is what enables the small 5-pin outline while still providing the full protection and diagnostic feature set normally seen in larger SO-8 parts. Typical applications include automotive relay and solenoid drivers (door locks, mirror adjust, seat modules), LED string drivers for interior lighting and status indication, small DC motor drivers for HVAC flaps and mirror fold, and industrial 24 V PLC discrete outputs where 350 mA load current is sufficient. When designing with this part, the user should respect the PCB thermal guidelines in the manufacturer's datasheet: the exposed die pad must be soldered to a copper area of at least 1 cm² to keep R_thJA within the safe operating envelope, and a freewheeling diode is mandatory for inductive loads. This page consolidates distributor pricing, AEC-Q100 cross-brand drop-in alternatives, and practical layout notes that go beyond the manufacturer datasheet, enabling rapid engineering qualification and sourcing decisions.
BTS4130QGAXUMA1 - Quad Hi-Side Switch 2.1A PG-DSO-20 | Infineon
The Infineon BTS4130QGAXUMA1 is a quad-channel Smart High-Side Power Switch housed in a PG-DSO-20-32 (20-pin DSO) package with integrated protective functions and diagnostic feedback. Each of the four output channels is built on an N-channel power MOSFET with charge pump, monolithically integrated in Infineon Smart technology, and rated for 2.1 A continuous load current per channel. The on-state resistance per channel is 130 mOhm typical, enabling efficient switching of resistive and inductive loads in 12 V automotive systems. A high-side power switch (also called a smart high-side driver) is a semiconductor switch placed between the positive supply rail and the load, controlling current flow with low-side referenced logic. Within the broader IC hierarchy, it sits in the power management family alongside low-side switches, half-bridge drivers, and H-bridges, and is specifically engineered to replace electromechanical relays and discrete MOSFET circuits in body-electronics, lighting, and heating modules. The BTS4130QGA family uses N-channel MOSFETs with an internal charge pump rather than P-channel devices, giving lower R_DS(on) per silicon area and tighter current-limit accuracy. Key features include per-channel current limiting, overtemperature shutdown with auto-restart, overvoltage clamp (load-dump robust to 45 V), reverse-battery protection via an intrinsic body diode, ground-loss robustness, and a status feedback pin for fault indication to the MCU. The device operates from a 6 V to 18 V supply (extended range up to 28 V transient) and is qualified to AEC-Q100 for automotive use. Typical applications include driving automotive lamps up to 2.1 A per channel, relay replacement in body control modules, solenoid and small-motor drivers, and resistive heating elements. The quad-channel integration lets one IC replace four discrete high-side switches, reducing PCB area and BOM cost. When designing in this part, ensure the heatsink copper area is sized to keep junction temperature below 150 C at the worst-case ambient and per-channel load, and always include reverse-battery protection at the module input. Compared with discrete N-MOSFET + gate-driver solutions, the BTS4130QGA eliminates gate-drive design complexity and provides diagnostic feedback out of the box.
BTS4140NHUMA1 - Smart High-Side Switch 200mA SOT-223 | Infineon
The Infineon BTS4140NHUMA1 is a single-channel smart high-side power switch with integrated vertical N-channel power FET, rated for 200 mA continuous load current and packaged in a PG-SOT223-4 (TO-261-4) surface-mount module. The device provides embedded protection (current limitation, short-circuit shutdown, thermal shutdown, overvoltage/load-dump protection, and undervoltage shutdown) plus diagnostic feedback, making it a member of the Classic PROFET 24V family designed for rugged 12V/24V automotive and industrial environments. A high-side switch is a power distribution topology in which the load is connected between ground and the MOSFET drain, and the switch sits between the positive supply rail and the load. Compared with low-side switching, high-side switches protect the load from shorts to ground, allow ground-referenced loads (lamps, solenoids, relays), and provide a more intuitive fault response. The BTS4140NHUMA1 belongs to the MINI-PROFET sub-family, optimized for compact PCB footprints and modest current levels up to about 200 mA. Key features include a typical on-resistance of approximately 1.2 ohm at 25 C, an operating voltage range of about 6 V to 62 V (with load-dump transient tolerance), current-controlled CMOS-compatible input, status flag output, and integrated clamping for inductive load turn-off. The PG-SOT223-4 package exposes a large thermal tab that doubles as the drain terminal and provides low thermal resistance for heat spreading into the PCB copper. The internal architecture combines a charge pump to drive the gate of the vertical N-channel MOSFET, a current-sense element, bandgap-based references for the protection comparators, and a status generator that pulls the diagnostic pin low in fault conditions. This monolithic integration reduces external BOM count (no flyback diode required for small inductive loads) and simplifies AEC-Q100-style qualification for the host module. Typical applications include automotive body electronics (door locks, mirror heaters, small lamp drivers, sensor supply switching), industrial 24V PLC discrete outputs, relay replacement in HVAC controls, and any 12V/24V subsystem needing protected, diagnostic-enabled high-side switching. The BTS4140NHUMA1 is especially well suited where PCB space is constrained but full PROFET protection is required. When designing with this part, place the PG-SOT223-4 thermal tab on a copper area of at least 1 cm squared to keep junction temperature within the 150 C Tj(max) under worst-case load-dump and ambient conditions. Always include a reverse-polarity protection block (P-MOSFET or Schottky) on the supply rail because the BTS4140NHUMA1 does not block reverse battery voltage on its own. This page synthesizes distributor pricing, SOT-223-4 drop-in alternatives, and practical thermal/PCB design notes that are not present in the manufacturer datasheet alone, accelerating both component selection and layout review.
BTS4141NHUMA1 - 700mA 24V Smart High-Side Switch | Infineon
The Infineon BTS4141NHUMA1 is a 700 mA single-channel smart high-side power switch housed in a PG-SOT223-4 (3+Tab) surface-mount package, built on Infineon's Classic PROFET family of vertical N-channel MOSFET switches with embedded protection and diagnostic functions. The part is specified for a 24 V automotive supply rail with integrated 0.15 ohm on-state resistance, providing energy-efficient load drive in a footprint-compatible SOT-223 outline. It supports continuous load current up to 700 mA and is qualified for automotive use per the manufacturer's automotive-grade certification. A high-side smart switch (also known as an intelligent high-side driver, or smart FET) is a power-distribution device that places the MOSFET on the supply side of the load rather than the ground side. This topology returns load current directly to the chassis ground through the load, simplifies fault detection, and eliminates ground-shift problems in body-control modules, lighting drivers, and relay replacements. The BTS4141N belongs to the Classic PROFET 24V family, which sits within the broader power-management IC hierarchy of load drivers, hot-swap controllers, and eFuses. Key features include overload protection with current limiting, thermal shutdown with automatic restart, overvoltage protection including load-dump transients, undervoltage shutdown with auto-restart and hysteresis, switching of inductive loads, and ESD protection. The integrated charge pump drives the gate of the N-channel vertical DMOS, while a status flag pin provides diagnostic feedback to the microcontroller. Compared to discrete MOSFET-plus-driver designs, the BTS4141N reduces BOM count, PCB area, and design effort. The BTS4141N is built on a vertical N-channel DMOS process that achieves a typical R_DS(on) of 0.15 ohm at room temperature. This on-resistance translates into low conduction loss - approximately 73 mW at 700 mA - which keeps the SOT-223 package within its thermal envelope without an external heatsink for typical automotive loads. The integrated logic interface accepts 3.3 V and 5 V CMOS levels directly, simplifying connection to modern microcontrollers. Typical applications include 24 V automotive body electronics such as lamp drivers (interior lights, position lamps, indicator LEDs), relay and solenoid replacement, small motor drivers (e.g., mirror adjust), and resistive load switching in central body controllers. The part is also used in industrial 24 V systems where its diagnostic feedback and protection set provide robust load management. When designing with the BTS4141NHUMA1, observe the maximum input voltage rating and derate output current with ambient temperature. A low-ESR input capacitor placed close to the Vbb pin is required to handle load-dump and jump-start transients; the tab of the SOT-223 must be soldered to a sufficient copper pour to keep junction temperature below the thermal-shutdown threshold. This page synthesizes distributor pricing, drop-in alternatives, comparison data, and practical design notes not found in the manufacturer datasheet alone, helping engineers select and qualify the BTS4141NHUMA1 faster.
BTS4142NHUMA1 - 1.4A 24V Smart High-Side Switch | Infineon
The Infineon BTS4142NHUMA1 is a single-channel 1.4 A smart high-side power switch built on Infineon's Classic PROFET™ 24 V vertical-FET technology, housed in a PG-SOT223-4 surface-mount package. It integrates an N-channel power MOSFET with embedded protection, diagnostic feedback, and logic-level control in a 4-pin footprint designed for automotive and industrial 24 V loads. A high-side switch is a power-distribution topology in which the MOSFET is placed between the supply rail and the load, allowing the load to be grounded and switched from the positive rail. Compared with low-side switching, high-side drive eliminates ground-shift noise, breaks ground-return loops, and is the industry standard for automotive lighting, relay replacement, and resistive/inductive 24 V loads. The BTS4142N family belongs to the broader category of power-management ICs (PMICs) and specifically to protected smart high-side switches (also called intelligent power switches, IPS, or PROFET devices). Key specifications include a 1.4 A nominal output current, a 70 mΩ typical on-state resistance (RDS(on)), a wide 6 V to 42 V operating supply range, and integrated protections: overload current limiting, thermal shutdown with auto-restart, overvoltage clamping (including load-dump), undervoltage shutdown with auto-restart and hysteresis, and ESD protection on the logic input. The logic-level input supports 3.3 V and 5 V microcontrollers directly. Typical quiescent current is in the low microampere range, enabling always-on standby in body-control modules. Internally the device uses a charge-pump-driven vertical N-channel DMOS output stage that achieves the 70 mΩ RDS(on) within a small SOT223 footprint. A diagnostic feedback pin reports open-load and overtemperature conditions to the microcontroller, supporting ASIL-relevant fault detection in safety-oriented automotive subsystems. The integrated reverse-battery protection is implemented at the package level, so no external reverse-diode is required on the supply pin. Typical applications include 24 V automotive LED and incandescent lighting, relay and solenoid replacement, HVAC flap motors, seat-heater control, and industrial 24 V resistive/inductive loads. Designers also use it for general-purpose high-side switching where integrated protection replaces discrete MOSFET-plus-fuse designs. When designing with the BTS4142NHUMA1, observe the datasheet's recommended PCB footprint and ensure the tab/thermal pad is soldered to sufficient copper area. For PWM dimming, stay below the maximum PWM frequency limit specified in the datasheet to avoid triggering thermal protection at high duty cycles. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS4175SGAXUMA1 - 1.3A Smart High-Side Switch | Infineon
The Infineon BTS4175SGAXUMA1 is a single-channel Smart High-Side Power Switch (Classic PROFET™ 24V family) rated for 1.3A continuous load current, built on an N-channel vertical power MOSFET with charge pump and embedded protection logic. The device is housed in a PG-DSO-8-24 surface-mount package (8-pin DSO with exposed thermal pad) and is qualified for automotive and industrial 24V applications. Key headline parameters are 1.3A nominal current, 1:1 N-channel high-side topology, and PG-DSO-8-24 footprint. A high-side power switch is a semiconductor device placed between the supply rail and the load, controlling load current by switching the high-side (positive) conductor rather than the low-side return. This topology keeps the load referenced to ground in the off state, which improves short-circuit safety and simplifies wiring diagnostics. Within the broader taxonomy, the BTS4175SGA sits in the high-side switch family, which belongs to power distribution switches, which are a subset of power management ICs (PMIC) and ultimately of semiconductor power devices. The Classic PROFET™ naming convention is Infineon's brand for its 24V smart high-side switches targeting automotive body and chassis modules. Key features include overload protection with current limiting at approximately 1.3A peak, thermal shutdown with auto-restart, short-circuit protection, over-voltage clamp at the output, ESD protection on all pins, and diagnostic feedback through a status output pin. The CMOS-compatible input accepts 3.3V or 5V logic levels directly, eliminating the need for a level shifter. The integrated charge pump drives the N-channel MOSFET gate above the supply rail so the device can deliver true high-side switching from a single 24V supply. Architecturally, the BTS4175SGA combines a vertical N-channel DMOS output stage, an on-chip charge pump, a sense-FET current-mirror for load-current monitoring, and a digital control block implementing protection timers and fault latching. The exposed thermal pad on the PG-DSO-8-24 package keeps junction-to-ambient thermal resistance low enough that the 1.3A rating is achievable without an external heatsink on standard 1- or 2-ounce copper FR-4 boards. The status pin distinguishes between normal operation, overtemperature, and open-load events for in-vehicle diagnostics (OBD) compliance. Typical applications include automotive lighting modules (headlamps, tail-lamps, interior LED strings), resistive heating loads such as seat heaters and mirror defrosters, small DC motor drivers for window lifters and door locks, and industrial 24V solenoid/valve switching. The device is also suitable as a general-purpose protected high-side driver in PLC digital outputs and process-control instrumentation. When designing with the BTS4175SGA, pay close attention to input-to-output ground-loop layout, keep the input capacitor close to the Vbb pin, and ensure the exposed pad receives a copper pour of at least 1 cm² for thermal relief. Designers should also verify cold-crash and load-dump transient behaviour against ISO 7637-2 waveforms, since automotive 24V buses can swing well above the nominal supply during cranking events. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, offering engineers a single reference for sourcing, replacement, and PCB-level implementation of the BTS4175SGAXUMA1.
BTS426L1E3062AAUMA1 - 7A 12V Smart High-Side Switch | Infineon
The Infineon BTS426L1E3062AAUMA1 is a single-channel, 12 V automotive smart high-side power switch built on Smart SIPMOS technology in a PG-TO263-5-2 (DPAK) surface-mount package. It integrates an N-channel vertical power FET with charge pump, ground-referenced CMOS-compatible input, and diagnostic feedback, delivering a typical on-state resistance of 5 mΩ and a continuous load current capability of 7 A per the manufacturer's datasheet. The device is part of Infineon's Classic PROFET 12 V family, designed for 12 V automotive load driving with embedded protection functions. A high-side power switch, often referred to as a smart switch or PROFET (Protected FET), is a semiconductor device that connects a load (e.g., a lamp, solenoid, or motor) to the positive supply rail while providing built-in protection against overcurrent, overtemperature, overvoltage, and short-circuit conditions. It belongs to the broader hierarchy: smart power switch → power distribution switch → power management IC → semiconductor device, and it typically replaces discrete MOSFETs, fuses, and relay circuits in automotive body and powertrain ECUs. Key features of the BTS426L1E3062AAUMA1 include a wide operating voltage range suitable for 12 V automotive systems, 5 mΩ typical RDS(on) for low conduction losses, CMOS-compatible logic-level input, ground-referenced status diagnostic output, and comprehensive embedded protections: overload current limiting, thermal shutdown with auto-restart, overvoltage clamp (including load-dump), reverse battery protection via external components, and ESD protection. The charge pump generates the gate drive for the N-channel MOSFET, enabling true low-RDS(on) high-side switching without a P-channel device. Architecturally, the BTS426L1E3062AAUMA1 monolithically integrates a vertical N-channel power MOSFET, charge pump, gate driver, current sense, and thermal sensor into one Smart SIPMOS die. The charge-pump-generated gate voltage exceeds the battery rail so the N-FET can be fully enhanced for minimal voltage drop. An external resistor at the GND pin (RGND, e.g., 150 Ω) sets the diagnostic current-limit threshold, while a series resistor at the ST (status) pin protects the diagnostic feedback output. Typical applications include automotive body electronics such as lamp drivers (headlamps, tail lamps, indicators), solenoid and valve control, LED lighting modules, heater circuits, and small DC motor drivers in body control modules (BCMs). The wide SOA and embedded protection make it especially attractive for replacing electromechanical relays and fuses in next-generation automotive electrical architectures. When designing with this part, place the device on a copper pour adequate to dissipate typical 2-4 W steady-state losses, and follow Infineon's application-note recommendations for inverse-polarity, reverse-load, and load-dump protection networks. Use the device within its SOA boundaries; thermal accumulation under repetitive short-circuit pulses can trigger shutdown. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS426L1E3062ABUMA1 - 5.8A 12V Smart High-Side Switch | Infineon
The Infineon BTS426L1E3062ABUMA1 is a 12 V automotive smart high-side power switch with an integrated vertical N-channel power FET, housed in a 5-pin PG-TO263-5-2 (D2PAK with 4 leads + tab) surface-mount package. According to the Infineon product page, the device provides 5.8 A continuous output current capability, a typical R_DS(on) of 5 mΩ (per Infineon's BTS426L1-E3062A datasheet family), and embedded protection/diagnostic functions for 12 V automotive loads. What is a high-side power switch? A high-side switch is a semiconductor load driver placed between the supply rail and the load, allowing the load to be turned on/off and protected against fault conditions. The "smart" designation means protection, diagnostic feedback, and control logic are integrated into one package, replacing discrete MOSFETs plus fuse/TVS protection. Smart high-side switches sit within the broader hierarchy: power distribution switch -> load driver -> power management IC -> semiconductor, and are commonly known as PROFET (Protected FET) devices. Key features include overload protection, current limitation, short-circuit protection, thermal shutdown with auto-restart, overvoltage protection (including load-dump transients per ISO 7637), fast demagnetization of inductive loads, and reverse-battery protection. The integrated charge pump drives the N-channel MOSFET fully on, achieving the low R_DS(on) that minimizes conduction dissipation. A diagnostic feedback pin reports open-load, short-to-ground, overtemperature, and overcurrent conditions back to the microcontroller. Typical applications include automotive body electronics (lighting, seat heating, mirror adjustment), relay and fuse replacement, power distribution modules, and industrial 24 V/12 V load switching. The wide operating range and ISO 7637 load-dump tolerance make it especially suitable for direct connection to the vehicle 12 V battery bus. Designers should consider thermal dissipation: at 5.8 A continuous load and 5 mΩ R_DS(on), conduction loss is roughly 0.17 W, but fault currents and ambient temperature in engine-bay environments can push junction temperature toward the 150 °C TJ limit. Per datasheet guidance, use thermal vias under the exposed tab and adequate PCB copper for heat spreading. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTS428L2 - 24V Smart High-Side Switch 5.8A | Infineon PROFET
The Infineon BTS428L2 is a 5.8 A smart high-side power switch from the Classic PROFET™ 24 V family, housed in a 5-pin PG-TO252-5-11 (DPAK) surface-mount package. Built around an N-channel MOSFET in a smart single-channel topology, the device integrates comprehensive protection and diagnostic functions that make it well suited for driving resistive, inductive, and capacitive automotive loads directly from a 12 V or 24 V board net. A high-side power switch is a semiconductor relay that sits between the battery/load-supply rail and the load, providing both load activation and intelligent protection. Such switches belong to the broader categories of power distribution ICs, smart switches, and load drivers, which in turn are part of the power management IC (PMIC) family in automotive electronics. The BTS428L2 is engineered for low standby current draw and EMC compatibility, two properties that are critical in body-electronics modules that are permanently connected to the battery. Key features include a typical on-state resistance (RDS(on)) of approximately 60 mΩ, low standby current, integrated reverse-battery protection, load-dump protection up to typical automotive transients, overcurrent, overtemperature, short-circuit, and overvoltage protection. The BTS428L2 also provides a dedicated status feedback pin for fault indication, enabling the microcontroller to discriminate between normal operation, open-load, and short-circuit conditions. Architecturally, the device uses a vertical N-channel MOSFET die with charge pump driving the gate, plus embedded analog and logic for protection and diagnostic functions. The 60 mΩ RDS(on) keeps conduction losses low at the 5.8 A nominal load current, while the integrated charge pump maintains full enhancement of the power MOSFET across the operating voltage range, including cold-crank and load-dump transients. Typical applications include automotive body-electronics loads such as lighting drivers (interior, exterior, and headlamp relays), heated mirrors and seats, window lifters, door locks, and small DC motors and valves in PCB space. The integrated diagnostics are particularly useful for safety-relevant loads that require fault reporting back to the BCM or ECU. When designing with this part, ensure the PCB thermal copper area is sized for the worst-case continuous load current and ambient temperature, since the TO-252 package relies on the PCB copper pad for heat dissipation. Decoupling at the supply pin and proper input capacitance handling on inductive loads are essential for robust operation. This page synthesizes distributor pricing, drop-in PROFET alternatives, and practical automotive design notes not found in the manufacturer datasheet alone, helping engineers shorten their BOM risk window and accelerate PCB layout review.
BTS428L2ATMA1 - 5.8A Smart High-Side Switch | Infineon
The Infineon BTS428L2ATMA1 is a single-channel, 5.8 A smart high-side power switch built on Infineon's classic PROFET (smart SIPMOS) technology, housed in a PG-TO252-5-11 (DPAK-5, 4 leads + tab) surface-mount package. The device integrates a vertical N-channel power MOSFET with charge pump, ground-referenced CMOS-compatible input, and embedded protection/diagnostic feedback functions, enabling direct microcontroller-driven control of resistive or small inductive loads from a 24 V automotive supply rail. A high-side power switch (also called a smart high-side driver) is a type of power distribution switch placed between the supply rail and the load; by switching the high side, the load is grounded only when off, simplifying wiring harnesses and improving short-circuit detection. Within the broader semiconductor taxonomy it sits in: high-side switch -> power distribution switch -> power management IC -> semiconductor. The BTS428L2 family belongs to Infineon's Classic PROFET 24V family aimed at automotive body and chassis applications requiring one-wire control with full diagnostic feedback. Key features include a 50 mOhm typical on-state resistance (R_DS(on)), very low standby current for quiescent battery savings, fast demagnetization of inductive loads, stable behavior under undervoltage conditions, and improved EMC. Protection features include load current limitation, overtemperature shutdown with autorestart, overvoltage clamp (including load-dump), reverse-battery robustness via the tab, and ground-loss protection. A diagnostic feedback pin reports open-load, short-to-battery, short-to-ground, and overtemperature conditions back to the microcontroller. The BTS428L2ATMA1 operates across a wide supply range typical of automotive 12 V/24 V systems, supports a continuous load current up to 5.8 A, and provides CMOS-level input thresholds so it can be driven directly from 3.3 V or 5 V microcontroller GPIO pins. The device is qualified to automotive reliability standards and supplied in a green (RoHS-compliant, Pb-free) package suitable for Pb-free reflow soldering per IPC/JEDEC J-STD-020. Typical applications include automotive body electronics (lighting, door modules, seat control), 24 V truck and bus power distribution, industrial 24 V PLC outputs, and any microcontroller-driven resistive or inductive load requiring comprehensive on-chip protection and diagnostic feedback. Compared to a discrete MOSFET + fuse solution, the BTS428L2ATMA1 reduces PCB area, eliminates the fusible element, and provides software-readable fault diagnostics. When designing with this device, ensure the tab is soldered to a sufficient copper pour for heatsinking - thermal performance scales with PCB copper area. Add a reverse-polarity protection diode or use the device's reverse-battery capability thoughtfully; ensure the input pin has a defined logic level during MCU reset to avoid unintended turn-on. The diagnostic pin requires an external pull-up resistor. This page synthesizes distributor pricing, drop-in alternative candidates, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for the BTS428L2ATMA1.
BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5
The Infineon BTS441RGATMA1 is a 17 A smart high-side power switch built on Smart SIPMOS technology with a single N-channel vertical power FET and integrated charge pump. Housed in a PG-TO263-5-2 (TO-263-5) surface-mount package with a 1:1 N-channel switch topology, it delivers a 1:1 power switch/driver function with diagnostic feedback for 12 V and 24 V automotive and industrial loads. A smart high-side power switch is a type of power distribution switch that sits between the supply rail and the load, providing controlled turn-on, current limiting, and protective features. Smart high-side switches belong to the broader family of power distribution switches -> load switches -> power management ICs -> semiconductor devices, replacing discrete fuses and relays with solid-state protection that can be controlled by a microcontroller. Key features include 17 A continuous load current capability, integrated CMOS-compatible ground-referenced input, diagnostic feedback output, and monolithic charge-pump gate drive. The BTS441RGATMA1 provides short-circuit, overload, and thermal protection as well as over-voltage clamping, enabling reliable switching of resistive, capacitive, and inductive loads in harsh automotive environments. Architecturally, the part uses an N-channel vertical DMOS output stage driven by an on-chip charge pump, allowing full enhancement at low battery voltages while maintaining low Rds(on). The diagnostic pin reports fault conditions such as overtemperature and open load, simplifying ECU firmware design. According to the manufacturer datasheet, the device operates across the standard 12 V/24 V automotive bus range with reverse-battery robustness. Typical applications include automotive lighting control (headlamps, tail lamps, turn signals), body electronics (door locks, seat heaters), and industrial 24 V load switching. The device is also used in power distribution modules and relay replacements where solid-state reliability and diagnostics are required. When designing with this part, ensure the load current does not exceed 17 A continuously and provide adequate copper area on the PCB to dissipate package heat. The exposed tab (pin 5) functions as the main heat path and must be soldered to a sufficiently large copper pour. Use a flyback or free-wheeling diode across inductive loads if the device's internal clamping is insufficient for the energy in the load inductance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.