Leistungs-MOSFET-Treiber
Produkte (657)
2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon
The Infineon 2ED2304S06FXUMA1 is a 650 V half-bridge gate driver IC with an integrated bootstrap diode (BSD), housed in an 8-pin PG-DSO-8 package. It delivers 0.36 A source and 0.7 A sink drive currents for IGBTs and MOSFETs in the EiceDRIVER 2ED2304S06F family. The device is qualified to industrial standards and targets fast switching power stages operating at high bus voltages. According to the Infineon manufacturer datasheet, the SOI process provides excellent negative transient immunity on the VS node and rugged latch-up performance. A gate driver is a power-management IC that sits between a low-voltage control signal (microcontroller, PWM controller, or logic) and the gate of a high-voltage power switch. The 2ED2304S06F belongs to the half-bridge gate driver category, meaning it contains both a high-side and a low-side driver plus level-shifting logic so that a single logic input pair can control a phase leg in a totem-pole or half-bridge topology. Compared with discrete opto-coupled or transformer drivers, monolithic half-bridge ICs reduce BOM count, propagation delay mismatch, and PCB area in switch-mode power supplies, motor drives, and lighting. Key features include 650 V absolute maximum blocking voltage on the high-side driver, integrated bootstrap diode to remove an external discrete, Schmitt-trigger CMOS/LSTTL inputs compatible down to 3.3 V, built-in dead-time and interlock logic to prevent shoot-through, and matched propagation delays of approximately 200 ns for symmetric switching. The 2ED2304S06F is also specified for VCC operation from 10 V to 17 V with undervoltage lockout (UVLO) on both the low-side VCC and the high-side VB-VS rail. The thin-film-SOI process enables negative VS transients (typical of motor-drive back-EMF events) to be tolerated without latch-up, a recurring failure mechanism in older junction-isolated drivers. The integrated BSD replaces an external high-voltage diode plus resistor, simplifying the bootstrap supply for the high-side. Typical applications for the 2ED2304S06FXUMA1 include small home appliances (fan, pump, and induction-cooking drives), low-power motor drives, switched-mode power supplies (SMPS) up to a few hundred watts, and solid-state relay (SSR) output stages. Designers should verify that the chosen MOSFET or IGBT total gate charge Qg remains below the driver's source/sink capability at the intended switching frequency so that rise and fall times stay within target EMI margins. Bootstrap capacitor sizing, dead-time selection, and gate-resistor tuning are the three primary design tasks when using this driver in a half-bridge topology. This page consolidates distributor pricing, drop-in same-package alternatives, and practical PCB design notes that go beyond what appears in the manufacturer datasheet, giving engineers a single reference for sourcing and applying the 2ED2304S06FXUMA1.
2ED2410EMXUMA1 - Dual High-Side N-MOSFET Gate Driver | Infineon
The Infineon 2ED2410EMXUMA1 is a smart analog high-side N-channel MOSFET gate driver IC from the EiceDRIVER APD family, designed for 12 V / 24 V automotive and industrial switching applications. It provides two independent gate drive outputs capable of sourcing 175 mA and sinking 350 mA, housed in a PG-TSDSO-24 thermally-enhanced package. The device operates from an 8 V to 36 V supply and supports a wider 3 V to 58 V logic/VBAT-tolerant range, enabling direct connection to 12 V or 24 V automotive bus rails. A gate driver IC is a power-management semiconductor that translates low-current logic-level control signals (from a microcontroller or ASIC) into the high-current drive required to switch a discrete power MOSFET. The 2ED2410-EM belongs to the high-side gate driver category, meaning it drives a MOSFET whose source sits at a switching node (typically ground-referenced load) rather than the positive rail. High-side drivers are essential in automotive load-switching, body-electronics, and power-distribution modules where the load must be referenced to chassis ground for safety and diagnostics. Key features of the 2ED2410EMXUMA1 include integrated charge-pump boost for 100% duty-cycle operation, an enable/shutdown pin, overcurrent protection (OCP), and Infineon's proprietary interleaved conduction protection that prevents cross-conduction between the two outputs. Logic inputs are compatible with both 5 V and 3.3 V microcontrollers, with internal pull-down resistors allowing direct MCU connection. The device is qualified for automotive use per AEC-Q100 with an operating junction temperature up to +150 °C. Architecturally, the 2ED2410-EM integrates a charge pump that maintains gate-source voltage above the MOSFET threshold even when the output is held continuously ON. This eliminates the need for an external bootstrap capacitor required by traditional half-bridge drivers. The two outputs can drive independent N-channel MOSFETs in parallel for higher current loads, or be used sequentially for OR-ing or load-sharing topologies. Built-in diagnostic features report fault conditions back to the MCU via the logic interface. Typical applications include automotive smart high-side switches replacing mechanical relays, body control modules (BCM), LED driver front-ends, DC-DC converter pre-drivers, and industrial 24 V solenoid/valve drivers. The dual-output architecture particularly suits H-bridge or back-to-back MOSFET configurations in power distribution boxes. When designing with this part, ensure adequate thermal copper under the exposed pad of the PG-TSDSO-24 package. The charge-pump output capacitance and MOSFET gate charge directly determine the achievable PWM switching frequency and duty-cycle range.
2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon
The Infineon 2ED2738S01GXTMA1 is an 8 A high-side/low-side half-bridge gate driver IC built on Infineon's proprietary Silicon-On-Insulator (SOI) level-shift technology, housed in a 10-pin PG-VSON-10-5 (3x3 mm) package with exposed pad. It delivers 1.0 A typical source and 2.0 A typical sink output current per channel, with 8 A peak capability, and is designed to drive power MOSFETs and IGBTs in switching converter and motor drive topologies. A half-bridge gate driver is a critical building block in power electronics, providing the level-shifted control signals and gate charge management for a switching half-bridge. Gate drivers sit hierarchically above MOSFETs/IGBTs in the power conversion signal chain, translating low-power PWM logic from a microcontroller or controller IC into the high-current drive signals required to rapidly switch the power devices. SOI technology eliminates the parasitic latch-up path common in junction-isolated drivers, delivering robust negative transient immunity and integrated bootstrap diode functionality that simplifies half-bridge designs. Key differentiating specifications include 4.0 A peak source / 8.0 A peak sink drive current, integrated bootstrap diode with internal current-limiting resistor, 120 ns typical propagation delay, 40 ns channel-to-channel matching, and 1.5 ns typical rise/fall time on a 1 nF load. The device operates from a 6 V to 20 V VDD supply and tolerates -10 V to +20 V transient negative voltages on the high-side output, with TTL-compatible logic inputs and integrated under-voltage lockout on both VCC and bootstrap rails. Typical applications include BLDC motor drives for E-bikes, power tools, and drones; primary-side synchronous rectification in telecom and server SMPS; half-bridge and full-bridge converters for solar micro-inverters and Class-D audio amplifiers; and high-frequency DC-DC converters driving GaN or silicon MOSFETs. The Infineon SOI construction provides superior dv/dt immunity (50 kV/us typical) and negative transient voltage tolerance that junction-isolated drivers cannot match. When designing with this device, place the bootstrap capacitor (typically 100 nF to 1 uF ceramic) directly between the BOOT and HS pins. The exposed thermal pad must be soldered to a sufficient PCB copper area to keep junction temperature within the 150 C maximum. For half-bridge applications, a small RC snubber on the phase node helps suppress ringing from power device switching transients.
2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon
The Infineon 2ED3140MC12LXUMA1 is a 6.5 A sinking / 6 A sourcing dual-channel isolated gate driver with 5.7 kVrms galvanic isolation in a 14-pin PG-DSO wide-body package. It is part of the EiceDRIVER Compact 2ED-X3 family and targets IGBT, MOSFET, and SiC MOSFET power stages up to 2300 V. Integrated dead-time control (DTC) and independent channel logic allow operation as dual low-side, dual high-side, or half-bridge driver from a single IC. A galvanically isolated gate driver is a semiconductor device that transmits gate-drive PWM signals across an isolation barrier using capacitive or magnetic coupling, while providing the high peak current needed to charge and discharge a power transistor's gate. Gate drivers sit between a low-power controller (MCU, MCU, or DSP) and the high-voltage power switch, forming one tier of the power-management hierarchy: gate driver -> driver IC -> power stage -> inverter/converter. Their role is to overcome the Miller capacitance of large IGBT/SiC die, prevent shoot-through via programmable dead time, and protect the control side from high-voltage transients. Key features of the 2ED3140MC12LXUMA1 include 6.5 A peak sink current for fast turn-off, 6 A peak source current, integrated dead-time control with a single resistor, 8.5 V undervoltage lockout (UVLO) matched to 12 V gate drive rails, and UL 1577 recognized 5.7 kVrms isolation voltage. The PG-DSO-14-71 wide-body package provides >8 mm creepage suitable for industrial 600 V-1700 V bus designs, and supports high dV/dt immunity through Infineon's coreless transformer (CT) technology. The device uses Infineon's capacitive-isolation CT technology rather than optocoupler or pulse transformer, eliminating LED aging, current-transfer-ratio drift, and saturation concerns common in legacy optocoupled drivers. The two output channels can be configured independently or as a half-bridge with hardware dead-time insertion, and the enable/shutdown input simplifies PWM fault management. Typical applications include industrial motor drives (servo, VFD), solar string inverters, EV charging infrastructure, UPS systems, and welding power supplies. In a 3-phase IGBT inverter the part drives six switches from three ICs, replacing optocoupler + buffer chains with a single component per phase. Designers should size the bootstrap capacitor to support the high-side supply at minimum PWM duty, keep the gate-drive loop shorter than 20 mm to limit ringing, and confirm creepage on the PCB exceeds 8 mm for 600 V reinforced insulation. The DTC resistor range trades minimum dead time against PWM resolution. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
2ED3146MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon
The Infineon 2ED3146MC12LXUMA1 is a 6.5 A dual-channel galvanically isolated gate driver housed in a 14-pin PG-DSO-14-71 wide-body package with 5.7 kVrms isolation, designed for driving 600 V/650 V/1200 V/1700 V/2300 V IGBTs, silicon MOSFETs, and SiC MOSFETs. The device combines 6.5 A sink and 6 A source peak output current capability with a 39 ns typical propagation delay and 5 ns channel-to-channel skew to minimize dead-time loss in half-bridge topologies. An isolated gate driver is a specialized interface IC that provides both level shifting and reinforced galvanic isolation between a low-voltage control domain (logic-level PWM signals) and a high-voltage power domain (transistor gate terminals). Isolated gate drivers sit hierarchically between gate-driver ICs and optocoupler/transformer-based discrete isolation, enabling compact, reliable, high-CMTI (>100 kV/us) signal transfer for switching power converters. Key features of the 2ED3146MC12LXUMA1 include integrated dead-time control (DTC) for hardware-managed shoot-through prevention, independent channel operation for low-side/low-side, high-side/high-side, or half-bridge modes, and a 12.5 V UVLO threshold optimized for 600 V/650 V/1700 V/2300 V IGBT-class switches. The PG-DSO-14-71 wide-body package provides the 8 mm creepage required for reinforced isolation per UL 1577 and IEC 60747-17. The device uses Infineon's coreless transformer (CT) isolation technology, which avoids the aging and Ct-drift issues of optocouplers while achieving >100 kV/us common-mode transient immunity. Internal logic includes input deglitch filters and matched propagation delays across both driver channels to support switching frequencies up to several hundred kHz without duty-cycle distortion. Typical applications include industrial motor drives (servo, VFD), solar inverters, UPS systems, EV charging stations, induction heating, and welding power supplies where reinforced isolation between control and power stages is mandatory. The 6.5 A peak gate drive is sufficient to switch large modules and discrete IGBTs with 100 nC or larger gate charge. When designing with this part, place decoupling capacitors as close as possible to VCC1 (pin 1) and VCC2 (pin 14), and route the gate-drive loop area as small as possible to minimize parasitic inductance. The DTC pin must be configured with timing components that match the power-switch turn-off/turn-on delay, or shoot-through can occur across the half-bridge. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
2EDB7259KXUMA1 - Dual 5A/9A Isolated Gate Driver 13-LGA | Infineon
The Infineon 2EDB7259KXUMA1 is a dual-channel isolated gate driver IC delivering 5A source and 9A sink drive current in a compact 13-pin LGA (5x5 mm) package. It is part of Infineon's EiceDRIVER 2EDB family of reinforced-isolation gate drivers, designed to drive the gates of MOSFETs, IGBTs, and GaN power switches in high-voltage, high-frequency switching power systems. The device provides 2.5 kVrms galvanic isolation with 150 V/ns CMTI and a propagation delay of approximately 38 ns per channel. An isolated gate driver is a specialized gate driver IC that provides galvanic isolation between the low-voltage control side and the high-voltage power switch side. The isolation barrier protects the low-voltage control circuitry (e.g., MCU, DSP) from dangerous high-voltage transients and ground potential differences on the power side. In the system hierarchy, isolated gate drivers sit between the PWM controller (signal generation) and the power semiconductor (switching), serving as a critical safety and signal-conditioning interface in the power management subsystem. Key features include under-voltage lockout (UVLO) protection, short-circuit protection (DESAT-like), active Miller clamping, and rail-to-rail output stages using a p-channel sourcing transistor to avoid the voltage drop typical of nMOS source followers. The wide supply range of 12V to 18V and operating temperature of -40C to +125C allow deployment in harsh industrial environments. The integrated 2.5 kVrms isolation eliminates the need for an external digital isolator plus gate driver combo, saving PCB area and BOM cost. The 2EDB7259K's architecture uses coreless transformer technology for the isolation barrier, delivering 38 ns propagation delay and tight channel-to-channel matching for synchronous rectifier or half-bridge topologies. The 150 V/ns CMTI ensures robust operation even with fast-switching SiC or GaN power devices where high dV/dt on the switched node would otherwise inject common-mode noise into the gate signal. Typical applications include industrial motor drives, solar inverters, server and telecom SMPS, EV onboard chargers, and high-frequency DC-DC converters where SiC or GaN switches are used. The dual isolated channels simplify half-bridge, full-bridge, and synchronous rectifier drive designs. When designing with this device, ensure the gate drive loop area is minimized and the boot capacitor (for high-side channel) is sized to handle the gate charge of the power switch. The DESAT/short-circuit protection requires an external blanking capacitor and diode network per the datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the 2EDB7259KXUMA1, offering information that is not found in the manufacturer datasheet alone.
2EDB9259YXUMA1 - Dual Isolated Gate Driver 5A/9A | Infineon
The Infineon 2EDB9259YXUMA1 is a dual-channel isolated gate driver IC in a 14-pin PG-DSO-14 (150 mil DSO) package, delivering 5A source and 9A sink peak gate-drive current per channel with 3000 Vrms galvanic isolation. It features 150 V/ns common-mode transient immunity (CMTI), a typical propagation delay of 38 ns, and independent channel-to-channel creepage suited for higher bus-voltage applications. The two output channels can be configured independently for high-side/low-side or half-bridge drive topologies, with built-in dead-time generation and matched propagation delays between channels. Background: An isolated gate driver is a semiconductor device that translates low-voltage control logic (typically 3.3V or 5V from a microcontroller) into the high-voltage, high-current gate-drive signals required by power transistors such as MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs. Because the gate driver and the controller side are galvanically isolated (often by magnetic coupling or on-chip coreless transformer technology), the gate driver protects the low-voltage controller from destructive high-voltage transients on the switching node. Isolated gate drivers sit in the power-management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Key features include: 4.5V to 18V VCC range, 36V absolute maximum VCC, integrated bootstrap diode, separate source/sink outputs for optimized turn-on/turn-off, undervoltage lockout (UVLO) for VCC and VBS, and propagation delay matching between channels within 5 ns. The PG-DSO-14 wide-body package (150 mil) increases channel-to-channel and primary-to-secondary creepage, enabling use in pollution degree 2 and 3 industrial environments. The 2EDB9259Y utilizes Infineon's coreless-transformer (CT) isolation technology, which delivers stable CMTI performance up to 150 V/ns and a propagation delay of 38 ns typical. The wide-body package, combined with the silicon-on-insulator (SOI) process, eliminates the need for external isolation components such as optocouplers or isolated DC/DC converters in the gate-drive path, reducing BOM count and PCB area by up to 50%. Typical applications include industrial motor drives (AC drives, servo drives, robotics), solar inverters, UPS systems, EV charging stations, switched-mode power supplies (SMPS), and Class D audio amplifiers where SiC MOSFETs or IGBTs are driven. Its 9A sink current is particularly useful for fast turn-off of high-capacitance SiC devices. When designing with the 2EDB9259YXUMA1, ensure the bootstrap capacitor is sized to support the high-side channel's quiescent current plus gate-charge requirements during the maximum on-time. Decouple VCC with a 1uF ceramic placed within 2 mm of the supply pin, and use a gate-drive resistor (typically 2-10 ohm) to limit ringing and EMI on the switching node. This page synthesizes distributor pricing (DigiKey, Mouser, LCSC, Arrow), drop-in same-brand and cross-brand alternatives from verified cross-reference data, and practical design notes that complement the manufacturer datasheet.
2EDF7275KXUMA1 - Dual 4A/8A Isolated Gate Driver | Infineon
The Infineon 2EDF7275KXUMA1 is a dual-channel isolated gate-driver IC from the EiceDRIVER 2EDi family, delivering 4 A source / 8 A sink peak output current with 37 ns typical propagation delay and 150 V/ns CMTI, housed in a 13-pin PG-TFLGA surface-mount package. It provides functional input-to-output isolation through coreless transformer (CT) technology, supports a 4 A 2-OUT high-side/low-side half-bridge non-inverting topology, and is qualified for -40 °C to +125 °C operation. A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, FPGA) and the gate of a power MOSFET, IGBT, SiC MOSFET, or GaN HEMT, providing the high peak current and voltage swing required to charge and discharge the device's gate capacitance quickly. Isolated gate drivers add a galvanic barrier between the low-voltage control domain and the high-voltage power stage, protecting the controller from high dv/dt transients and allowing it to drive switches that float at hundreds of volts above ground. The 2EDi family is positioned as a compact, fast, robust solution for medium- to high-voltage power conversion. Key features of the 2EDF7275K include 4 A source / 8 A sink peak gate-drive current for fast switching transitions, 37 ns propagation delay for tight timing control, and 150 V/ns common-mode transient immunity (CMTI) for reliable operation in noisy half-bridge environments. Independent high-side and low-side outputs allow direct drive of half-bridge or bootstrap-driven topologies, while the integrated dead-time and shoot-through protection improve system reliability. The PG-TFLGA-13-1 package offers a small footprint suitable for high-density power designs. Architecturally, the 2EDF7275K uses coreless transformer isolation rather than optocoupler or capacitive isolation, achieving high CMTI, low propagation delay, and small package size. The internal SLDO (slave LDO) regulates the secondary-side supply through an external resistor RVDDI from VDD, simplifying PCB design by eliminating the need for an isolated bias supply IC on the secondary side. Typical applications include DC-DC converters, half-bridge and full-bridge power stages, motor drives, solar inverters, and industrial SMPS. It is particularly well suited for driving medium- to high-voltage MOSFETs in compact, isolated power topologies where switching speed and noise immunity are critical. When designing with this part, place bypass capacitors close to VDDI/VDD pins and keep the gate-drive loop area minimal to preserve CMTI margin. Verify the bootstrap capacitor refresh at minimum duty cycle to prevent high-side UVLO in continuous PWM operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
2EDF7275KXUMA2 - Dual-Channel Isolated Gate Driver 4A/8A | Infineon
The Infineon 2EDF7275KXUMA2 is a fast, robust, dual-channel functionally isolated MOSFET gate driver from the EiceDRIVER 2EDi product family, delivered in a PG-TFLGA-13-1 surface-mount package. It sources 4 A and sinks 8 A of peak gate-drive current, provides 37 ns typical propagation delay with accurate and stable channel-to-channel timing, and withstands 150 V/ns common-mode transient immunity (CMTI), making it well suited to high-performance DC-DC medium-voltage, half-bridge, and full-bridge topologies. The device integrates an SLDO regulator activated by tying SLDON to GNDI and uses an external resistor RVDDI between VDD and VDDI to set the internal supply, simplifying PCB layout. A gate driver is a power-management IC that sits between a low-power controller (FPGA, MCU, or PWM controller) and a power switch (MOSFET, IGBT, or GaN HEMT), translating logic-level commands into the high-current, high-slew-rate signals needed to switch the power device efficiently. In the broader hierarchy, a gate driver belongs to the power management semiconductor family, alongside voltage regulators, supervisors, and motor drivers. Isolated gate drivers add a galvanic isolation barrier between the control domain and the high-voltage switching node, which is mandatory in telecom bricks, industrial motor drives, and photovoltaic inverters where creepage and clearance requirements prohibit a direct low-voltage-to-high-voltage connection. Key features of the 2EDF7275KXUMA2 include 4 A source / 8 A sink peak output current, 37 ns propagation delay, accurate and stable timing between channels, 150 V/ns CMTI, functional isolation, and a wide VDDA supply range. The driver is non-inverting and supports independent inputs for each channel, allowing flexible half-bridge or dual-independent configurations. The PG-TFLGA-13-1 package is compact and offers good thermal performance for a driver dissipating <0.5 W under typical switching conditions. Typical applications include isolated DC-DC converters, telecom bricks, industrial SMPS, photovoltaic micro-inverters, motor drives, and any topology that requires a high-CMTI isolated gate driver in a compact package. When designing with the 2EDF7275KXUMA2, observe the RVDDI sizing guidance in the datasheet to set the internal rail correctly, keep the high-current gate loop area minimal, and place the bootstrap or isolated supply decoupling capacitors directly at the driver pins.
2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon
The Infineon 2EDF9275FXUMA1 is a fast, robust, dual-channel, functionally isolated MOSFET gate driver IC housed in a 150-mil PG-DSO-16-11 package. It delivers 4 A source / 8 A sink drive capability with 37 ns typical propagation delay and 150 V/ns common-mode transient immunity (CMTI), specifically optimized for driving Infineon CoolSiC™ MOSFETs and other wide-bandgap power devices in high-performance SMPS applications. A gate driver is an IC that sits between a low-power control signal (from a microcontroller or PWM controller) and a power MOSFET/IGBT gate, providing the high peak current and voltage swing needed to switch the power device quickly and efficiently. In the power-converter hierarchy, isolated gate drivers form the critical interface between the secondary-side control logic and the primary-side high-voltage switching node, providing galvanic isolation (functional in the 2EDF9275F, reinforced in the 2EDF9275F variant family) for safety and ground-loop elimination. Key features include independent high-side and low-side output channels with built-in shoot-through protection, ±1 ns channel-to-channel matching, and a wide supply range that supports unipolar and bipolar gate-drive schemes. The driver accepts CMOS/TTL logic inputs and is specified for operation from -40 °C to +125 °C, making it suitable for industrial, telecom, and renewable-energy power stages. The 2EDF9275FXUMA1 architecture combines Infineon's proven Coreless Transformer (CLT) isolation technology with an on-chip low-voltage regulator, eliminating the need for an external bootstrap diode for the low-side channel in many topologies. Internal dead-time control and matched propagation delays ensure predictable switching behavior across the full temperature range, which is essential for high-frequency hard-switched and resonant converters. Typical applications include half-bridge and full-bridge power converters for telecom rectifiers, server and datacom power supplies, solar inverters, EV onboard chargers, and industrial motor drives. The CoolSiC™-optimized drive strength allows direct connection to 1200 V SiC MOSFETs without external gate resistors in many configurations. Designers should review the datasheet section on bootstrap capacitor sizing for high-side channel operation and confirm CMTI headroom against the application's dv/dt profile.
2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon
The Infineon 2EDL5013U2DXTMA1 is a 120 V boot, 3 A source/sink, half-bridge MOSFET gate driver IC in a non-inverting configuration housed in the compact PG-TSNP-12-5 surface-mount package. It integrates a high-side and a low-side driver channel with a built-in bootstrap diode optimized for driving the high-side N-channel MOSFET in a synchronous buck or half-bridge topology. The driver uses an industry-standard 4.5 V to 5.5 V VCC supply and supports logic-level inputs down to 3.3 V, making it compatible with modern PWM controllers and digital signal processors. A half-bridge gate driver is a power-management IC that converts low-current PWM logic signals into the high peak currents required to rapidly charge and discharge the gate capacitance of power MOSFETs. It belongs to the broader category of gate driver ICs (sub-category: half-bridge / bootstrap drivers) within the power MOSFET driver segment of power management semiconductors. Half-bridge drivers are foundational building blocks for synchronous buck converters, half-bridge and full-bridge converters, motor drives, and Class D audio amplifiers, where one device must drive two MOSFETs in a push-pull arrangement with strict dead-time control to prevent shoot-through. Key features include 3 A peak source and 3 A peak sink gate drive capability, 120 V maximum bootstrap voltage rating, integrated bootstrap diode, typical rise time of 4.4 ns and fall time of 3.5 ns, under-voltage lockout (UVLO) for both VCC and VBS rails, and a 7 A active Miller clamp to prevent parasitic turn-on of the low-side MOSFET. The PG-TSNP-12-5 (12-pin Thin Small Non-leaded Package, 5 mm x 5 mm outline) offers excellent thermal performance and a low-inductance lead frame, critical for high di/dt switching transitions. Typical quiescent current is in the sub-milliamp range, minimizing losses in standby operation. Architecturally, the 2EDL5013U2D uses a level-shifter to translate the low-side PWM input to the high-side floating supply domain, an integrated bootstrap diode that replaces the discrete external diode and resistor traditionally required, and matched propagation delay between high-side and low-side channels to simplify dead-time compensation. The non-inverting logic ensures that the gate follows the input directly, which simplifies firmware on the controller side. Typical applications include telecom 48 V point-of-load converters, server and data-center VRM stages, industrial DC-DC converters, solar micro-inverters, and motor-drive half-bridges. The 120 V boot rating comfortably covers 48 V bus rails and most telecom input transients. When laying out the PCB, keep the bootstrap capacitor close to the BST and SW pins to minimize voltage ringing, and provide a 4.7 uF to 10 uF ceramic VCC bypass capacitor directly at the supply pin. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
2EDL5023U2DXTMA1 - 120V Boot, 3A Half-Bridge Gate Driver | Infineon
The Infineon 2EDL5023U2DXTMA1 is a 120 V bootstrap, 3 A sink/source half-bridge gate driver IC housed in a 12-pin PG-TSNP-12-5 package. It integrates a non-inverting high-side and low-side driver channel pair with independent TTL-compatible PWM inputs (HI, LI), an active-high enable pin (EN), a 5 V gate-drive supply pin (VDD), and a common ground return (VSS). The driver delivers up to 3 A peak gate drive current into capacitive MOSFET loads, enabling fast switching transitions and reduced switching losses in high-frequency power stages. A gate driver IC is a power management semiconductor that sits between a low-power control circuit (such as a microcontroller or PWM controller) and the power MOSFETs, IGBTs, or GaN switches in a switching power converter. By providing high peak current and level-shifting the control signal to the high-side switch referenced to the switching node (SW), gate drivers allow low-voltage controllers to operate power devices stacked in half-bridge or full-bridge topologies. The 2EDL5023U2DXTMA1 belongs to the half-bridge driver category within the broader gate-driver hierarchy: half-bridge driver > gate driver > power management IC > semiconductor. Key features of the 2EDL5023U2DXTMA1 include 120 V bootstrap voltage rating supporting high-side operation up to 100 V bus rails, integrated bootstrap diode architecture (U2 family), under-voltage lockout (UVLO) on VDD, 3 A typical peak gate drive capability, and matched propagation delay between the high-side and low-side channels to prevent duty-cycle distortion. The PG-TSNP-12-5 package provides a small footprint suitable for space-constrained PCB designs, while the exposed pad supports thermal dissipation of internal driver losses. The device uses Infineon's proven high-voltage level-shifter technology with integrated bootstrap diode, eliminating the need for an external bootstrap diode in most applications. The EN pin allows external shutdown for low quiescent current standby, important for battery-powered and energy-conscious designs. TTL-compatible inputs allow direct interfacing with 3.3 V or 5 V microcontrollers without level translation. Typical applications include driving the high-side and low-side MOSFETs in buck, boost, and half-bridge DC-DC converters, motor driver half-bridges up to 100 V bus, Class-D audio amplifier output stages, and primary-side driven switch-mode power supplies. The 3 A peak current and 120 V bootstrap rating make this part particularly suited for higher-power synchronous rectification stages. When designing with the 2EDL5023U2DXTMA1, ensure that the bootstrap capacitor value is sized for the gate charge requirement and switching frequency of the driven MOSFET, with a 100 nF to 1 uF ceramic typically sufficient. Place the driver close to the driven power switches to minimize gate-loop inductance and avoid ground bounce by using a low-impedance VSS return. A TVS or snubber on the switching node may be required in motor-drive applications with high dV/dt. This page synthesizes distributor pricing, parametric comparison, and design notes that complement the Infineon datasheet to accelerate component selection and PCB implementation.
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
The Infineon 2EDL6014ACG2DXTMA1 is a 120 V half-bridge gate driver IC housed in a compact 11-pin WQFN package (2.2 x 2.2 mm) with exposed thermal pad. It delivers 4 A source and 6 A sink drive current per channel, supports non-inverting logic inputs, and operates from a 2.97 V to 5.5 V supply rail. Two completely floating high-side outputs are capable of switching a high-side MOSFET operating up to 120 V, which makes the device especially useful for switched-capacitor and multilevel converter topologies. A half-bridge gate driver is a power-management IC that translates low-power PWM logic signals from a controller (MCU, DSP, or analog controller) into the high-current gate drive required to switch the MOSFETs of a half-bridge, full-bridge, or multilevel power stage. It belongs to the broader category of gate drivers, which sit within the power management IC hierarchy above MOSFETs and IGBTs. The half-bridge architecture integrates one high-side and one low-side driver channel with built-in level shifting, allowing the high-side switch to be controlled safely while its source node swings with the phase voltage. Key features include 4.2 ns typical rise time and 3.8 ns typical fall time on the gate outputs, low propagation delay suitable for high-frequency designs, and an exposed pad that provides a low thermal resistance path for dissipating gate charge losses at high switching frequencies. The non-inverting input logic simplifies MCU interface design and eliminates the need for external inverters in standard half-bridge topologies. The 2EDL6014ACG2DXTMA1 is built on Infineon's EiceDRIVER technology platform, which combines a robust level-shifter stage with matched propagation delays between high-side and low-side channels. This matched timing is critical for avoiding cross-conduction (shoot-through) in half-bridge converters. The wide 120 V common-mode transient immunity (CMTI) of the floating high-side channel makes the device robust against the fast dV/dt events seen in GaN and high-speed Si MOSFET applications. Typical applications include switched-capacitor converters, multilevel totem-pole PFC, 48 V to 12 V bus converters, synchronous rectification drivers, and small motor driver stages. The 4 A/6 A source/sink capability comfortably drives MOSFETs in the IPAK/D2PAK class as well as many GaN HEMTs without an external buffer stage. The 11-WQFN footprint is optimized for placement directly next to the half-bridge MOSFETs, minimizing the gate-loop inductance that limits switching speed. When designing with this device, keep the gate-drive loop area as small as possible by placing the driver within 5 mm of the MOSFET gates, and provide a 100 nF bootstrap capacitor plus a 1 ohm bootstrap resistor for each high-side channel. Do not exceed 120 V on the high-side VBS-to-VS floating supply, and ensure VDD decoupling is at least 1 uF ceramic placed within 2 mm of the VDD pin. This page synthesizes distributor pricing, parametric alternatives, and practical layout notes not found in the manufacturer datasheet.
2EDL8023GXUMA1 - 120V Boot, 3A/4A Half-Bridge Gate Driver | Infineon
The Infineon 2EDL8023GXUMA1 is a junction-isolated, 120 V bootstrap-rated, half-bridge gate driver IC that delivers 3 A source and 4 A sink peak gate-drive current in a compact PG-VDSON-8-4 (DSO-8 with exposed pad) surface-mount package. It is specifically designed to drive the high-side and low-side N-channel MOSFETs (or GaN HEMTs) of a synchronous buck, half-bridge, or full-bridge DC-DC converter stage, and it operates from a wide 8 V to 17 V VCC supply with built-in undervoltage lockout on both the VCC rail and the high-side bootstrap rail. A gate driver is a power-management IC whose job is to translate the low-power PWM signal from a controller into the high-current, level-shifted gate-drive waveform required to switch the power MOSFETs in a switching converter. The 2EDL8023 sits in the driver family within the broader power-management IC category, which itself is part of the analog and mixed-signal semiconductor taxonomy. Junction isolation, as opposed to level-shifting high-voltage capacitors, gives the part robust common-mode transient immunity and removes the bootstrap-diode external component cost. Key specifications include a 120 V maximum bootstrap (high-side drain) rating, ±2 ns typical propagation delay matching between the two channels, less than 5 ns channel-to-channel mismatch, an integrated 120 V bootstrap diode, and TTL-compatible logic inputs with internal pull-down. The non-inverting input stage accepts 3.3 V or 5 V PWM directly from a digital controller. The exposed thermal pad on PG-VDSON-8-4 gives an RθJA around 40 C/W, which is sufficient for switching frequencies up to 1 MHz at moderate gate-charge loads. Typical applications include CPU/GPU VRM buck converters, telecom 48 V intermediate bus converters, server point-of-load regulators, industrial motor-drive half-bridges, solar micro-inverters, and USB-PD/EPR high-density adapters. Designers choose the 2EDL8023GXUMA1 when they need a small-footprint, AEC-Q100-capable driver that replaces a discrete bootstrap-diode + isolated-gate-driver implementation. The integrated bootstrap diode and 4 A sink capability also support high-Qg GaN HEMTs at switching frequencies above 500 kHz. A critical design consideration is PCB layout: the high-side bootstrap capacitor must be placed within 2 mm of the BST and HS pins, and the gate-drive return path (low-side source connection) must be a Kelvin connection to the GND pin to avoid ground bounce during the 4 A sink transition. Place a 1 µF X7R ceramic directly on VCC and a 100 nF on VBS for stable operation across the full temperature range.
2EDL8024GXUMA1 - 120V Boot, 3A/4A Half-Bridge Gate Driver | Infineon
The Infineon 2EDL8024GXUMA1 is a 120 V bootstrap, 3 A source / 4 A sink, junction-isolated half-bridge gate driver IC housed in a PG-VDSON-8-4 (8-pin) package. Designed for high-frequency DC-DC and motor-drive switching stages, it integrates a bootstrap diode and provides non-inverting logic inputs with ±2 ns typical delay matching between the high-side and low-side channels. A gate driver IC is a power-management building block that sits between a low-power controller (PWM, MCU, or DSP) and the high-current gate of a power MOSFET, IGBT, or GaN switch. Gate drivers belong to the broader hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. By providing high peak gate current and level shifting to the high-side floating supply, drivers overcome the limited drive strength of controllers and enable fast, clean switching transitions that minimize switching loss and EMI. The 2EDL8024GXUMA1 sources up to 3 A and sinks up to 4 A of peak gate current, allowing rapid charging and discharging of large MOSFET gate capacitances at switching frequencies above 500 kHz. Integrated undervoltage lockout (UVLO) on both VCC and the bootstrap supply protects the power stage from partial-turn-on events. The 120 V bootstrap voltage rating covers 80 V-100 V MOSFET bus rails with substantial margin for transients and ringing. Internally, the device uses a junction-isolated high-side level shifter that tolerates high dV/dt common-mode transients common in hard-switched half-bridges. The proprietary level-shift architecture delivers typical propagation delay of about 40 ns with channel-to-channel matching of ±2 ns, minimizing dead-time imbalance that would otherwise increase body-diode conduction losses or risk cross-conduction shoot-through. Typical applications include high-frequency DC-DC buck and half-bridge converters, server and telecom point-of-load power, industrial SMPS, motor-drive half-bridges for low-voltage brushless DC fans and pumps, and class-D audio output stages. In each case the driver is placed between the PWM controller and the MOSFET/IGBT gates with a local bootstrap capacitor and a small gate-series resistor to control ringing. When designing with the 2EDL8024GXUMA1, place the bootstrap capacitor as close as possible to the BST and HS pins and use a 1 ohm to 10 ohm gate resistor to dampen parasitic ringing. Ensure the VCC decoupling (typically 1 uF to 10 uF) is placed within 2 mm of the VCC pin to keep the floating supply rail clean under high di/dt load steps. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon
The Infineon 2EDL8033G4BXTMA1 is a 120 V bootstrap-rated, junction-isolated half-bridge gate driver IC that delivers 3 A source and 4 A sink drive current to switch high-side and low-side MOSFETs in compact PG-VDSON-8-5 packages. It targets hard-switched and soft-switched converters where the high-side channel must tolerate a 120 V bus while the low-side channel is ground-referenced. A gate driver is a power-management semiconductor that sits between a low-power control IC (MCU, DSP, or PWM controller) and the gate of a power MOSFET or GaN HEMT. Its function is to translate a logic-level PWM signal into a high-current drive waveform capable of charging and discharging the gate capacitance of a power switch in nanoseconds. Within the broader taxonomy, this device belongs to the gate driver IC family, which is a sub-category of power management ICs and the wider semiconductor hierarchy. Junction-isolated drivers use on-chip high-voltage diodes for level shifting instead of galvanic isolation, which lowers cost and propagation delay but requires that logic inputs stay within the device's common-mode window. Key features of the 2EDL8033G4BXTMA1 include 3 A / 4 A asymmetric source/sink drive strength, a 120 V maximum bootstrap voltage, independent TTL-compatible inputs for the high-side and low-side channels, and integrated under-voltage lockout (UVLO) on both the VCC and VBS rails. The driver inputs can withstand input common-mode swings from -10 V to 20 V, providing strong noise immunity in motor and Class-D audio environments. Built-in shoot-through protection logic enforces a programmable dead time that prevents cross-conduction of the half-bridge. The device uses Infineon's junction-isolation high-voltage technology, which integrates a level-shifting high-voltage N-channel MOSFET and high-side driver in a single die. The PG-VDSON-8-5 thermally enhanced package exposes the die pad to a low thermal resistance path, allowing continuous 3 A / 4 A switching without external heat-sinking. Propagation delay is matched to within a few nanoseconds between channels, which is critical for high-frequency power conversion. Typical applications include BLDC motor drives, Class-D audio amplifiers, telecom bricks and telecom DC-DC point-of-load converters, e-bike controllers, and small-appliance inverter stages. The asymmetric 3 A/4 A source/sink drive is well matched to standard Si MOSFETs in the 80 V to 150 V class. When designing with this driver, place the bootstrap diode and capacitor close to the VBS and VCC pins, and keep the high-side return path (pin GND-SW) short to minimize ringing. Always check that the VCC and VBS under-voltage thresholds match the selected MOSFET gate-drive requirements. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing a single reference that consolidates Infineon's official specifications, sourcing information, and real-world PCB design guidance.
2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon
The Infineon 2EDL8033G4CXTMA1 is a 120 V boot, 3 A source / 4 A sink, junction-isolated half-bridge gate driver IC in a 10-pin VDSON (PG-VDSON-10-2) package with exposed pad. Designed to drive both high-side and low-side N-channel MOSFETs or IGBTs in switching converter and motor drive topologies, it integrates a built-in bootstrap diode and supports input logic levels compatible with standard 3.3 V and 5 V microcontrollers. A half-bridge gate driver IC is a power-management semiconductor that sits between a low-voltage control MCU and the high-voltage, high-current power switches in a switching converter. It belongs to the broader hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. The 2EDL8033G4CXTMA1 specifically targets the half-bridge / synchronous-rectifier class, where one high-side and one low-side switch must be driven with a strict dead-time to prevent shoot-through. Key features include 3 A source / 4 A sink gate-drive current for fast MOSFET switching, 120 V bootstrap tolerance that covers 80 V / 100 V / 120 V-class MOSFET buses, integrated bootstrap diode to reduce external BOM, and junction-isolation technology that delivers >2 kV transient withstand between input logic and high-side drive. The driver operates from a VCC range of 10 V to 20 V (typical 12 V) and offers a propagation delay of typically 45 ns with <10 ns channel-to-channel matching, suitable for switching frequencies up to several hundred kHz. The architecture uses level-shifting high-side drive with a floating bootstrap supply referenced to the half-bridge switching node (HS pin). This allows the high-side gate to float up to 120 V above the IC ground, enabling high-density buck, boost, half-bridge, and full-bridge topologies. Junction isolation avoids the cost and size of transformer or digital isolators while still providing robust dv/dt immunity in noisy switching environments. Typical applications include telecom and server isolated DC-DC brick converters, industrial motor-control half-bridges, solar micro-inverters, Class-D audio amplifiers, and eMobility auxiliary power stages. The exposed thermal pad of the PG-VDSON-10-2 package supports continuous switching at high frequency without thermal derating. When designing with this part, place a low-ESR 1 uF to 4.7 uF ceramic bypass capacitor directly on the VCC pin and a 100 nF boot capacitor between HB and HS. Maintain PCB creepage between the high-side exposed pad and the logic-side ground per IPC-2221 to preserve the rated isolation withstand. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical PCB design notes not found in the manufacturer datasheet.
2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon
The Infineon 2EDL8034G4CXTMA1 is a 120 V boot, 3 A source / 4 A sink junction-isolated half-bridge gate driver IC housed in a 10-pin PG-VDSON-10-2 (DSN-10) package with exposed thermal pad. It is designed to drive the high-side and low-side N-channel MOSFETs (or GaN HEMTs) of a synchronous half-bridge or buck/boost converter from logic-level PWM inputs. A gate driver is a power-management IC that sits between a low-current PWM controller and the high-current gate of a switching transistor, providing level shifting, drive strength, and protection. The 2EDL8034 belongs to the gate-driver IC hierarchy (gate driver -> driver IC -> power management IC -> semiconductor) and is a non-inverting type: its HO and LO outputs follow the HIN and LIN inputs directly, simplifying PWM dead-time generation in the upstream controller. Key features include 4 A peak sink / 3 A peak source gate-drive current into a 1 nF load, a 120 V bootstrap diode and high-side voltage rail tolerant to 120 V, integrated under-voltage lockout (UVLO) for both VCC and VBS rails, and junction isolation rated to 5 kV HBM ESD. The driver accepts 3.3 V / 5 V logic inputs and operates over -40 C to +125 C junction temperature, suiting industrial and automotive-grade powertrain designs. The DSN-10 footprint with exposed pad keeps the high-current return loops short and provides low thermal resistance (~30 C/W) for high-frequency switching. The architecture uses a true low-side level shifter with a bootstrap diode for the high-side rail, eliminating the need for an external bootstrap diode in most designs. Internal logic prevents cross-conduction by ensuring HO and LO cannot be high simultaneously, while the small propagation delay (~50 ns typical) supports switching frequencies up to 500 kHz. Typical applications include telecom and server buck/boost converters, half-bridge and full-bridge motor drives, class-D audio amplifiers, industrial SMPS, and automotive 48 V mild-hybrid DC-DC stages. The 120 V boot rating supports 48 V, 60 V, and 80 V bus rails commonly seen in telecom rectifiers and mild-hybrid vehicles. When designing with this device, place the bootstrap capacitor (typically 0.1 uF to 1 uF ceramic) close to the VBS pin and use a low-ESR ceramic on VCC to suppress switching noise. Verify the dead-time insertion in the controller to prevent shoot-through under all load transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, supporting engineers sourcing 2EDL8034G4CXTMA1 for half-bridge power stages.
2EDL8123GXUMA1 - 120V Boot 3A/4A HS/LS Gate Driver | Infineon
The Infineon 2EDL8123GXUMA1 is a 120 V bootstrap, junction-isolated half-bridge gate driver IC delivering 3 A source and 4 A sink drive capability in a PG-VDSON-8-4 (8-pin VSON) package. It is designed to drive the gates of power MOSFETs and IGBTs in high-frequency switching applications. The device integrates a low-side and high-side driver with a built-in bootstrap diode, simplifying half-bridge designs and reducing external component count. A gate driver IC is an interface circuit that translates low-power control signals from a microcontroller, DSP, or PWM controller into the high-current drive voltages required to switch power transistors (MOSFETs, IGBTs, GaN HEMTs) on and off efficiently. Gate drivers sit hierarchically between the controller IC and the power stage, forming a critical part of the power conversion signal chain. Within power management, they belong to the power MOSFET driver subcategory alongside isolated gate drivers, low-side drivers, and high-side drivers. The 2EDL8123 belongs to Infineon's EiceDRIVER family of junction-isolated gate drivers, optimized for hard-switched and resonant topologies where compact size, high drive strength, and integrated bootstrap functionality are required. Key features include 3 A typical source current (I_source) and 4 A typical sink current (I_sink) for fast switching transitions, 120 V maximum bootstrap voltage (V_BS) rating, integrated bootstrap diode, undervoltage lockout (UVLO) for both V_CC and V_BS rails, and TTL/CMOS-compatible logic inputs. The non-inverting input configuration simplifies direct microcontroller interfacing. The driver supports switching frequencies up to several hundred kHz depending on gate charge and operating conditions, making it suitable for high-density power converters. The 2EDL8123 uses Infineon's junction-isolation (JI) technology to provide galvanic isolation between the low-voltage logic input and the high-voltage switching node. The integrated bootstrap diode eliminates an external component and reduces PCB footprint. Typical propagation delay is in the tens-of-nanoseconds range, enabling accurate PWM timing in synchronous rectification and motor drive applications. Typical applications include synchronous buck and boost DC-DC converters, motor drive half-bridges for BLDC and PMSM motors, solar microinverters, industrial switched-mode power supplies (SMPS), and class-D audio amplifiers. The wide bootstrap voltage range also supports 100 V and 120 V bus systems. According to the manufacturer datasheet, the device is qualified for industrial operating temperatures from -40 C to +125 C. When designing with this driver, select an external bootstrap capacitor based on the gate charge of the driven MOSFET and the switching frequency. A UVLO setting on the high-side supply prevents partial turn-on of the high-side switch during startup. Place the driver as close as possible to the driven MOSFETs to minimize parasitic gate-loop inductance. This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select drop-in equivalents and optimize half-bridge layouts.
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
The Infineon 2EDL8124GXUMA1 is a 120 V bootstrap, 3 A source / 4 A sink, junction-isolated half-bridge gate driver IC housed in a 4 mm x 4 mm PG-VDSON-8-4 package. It is designed to drive the high-side and low-side N-channel MOSFETs of a synchronous buck, half-bridge, or full-bridge switching converter, with integrated bootstrap diode, shoot-through protection, and independent TTL-compatible inputs with built-in hysteresis. The high-side channel tolerates a 120 V bootstrap supply and switches at typical propagation delays below 50 ns, enabling multi-MHz operation in telecom and datacom point-of-load converters. What is a junction-isolated gate driver? A gate driver is a power-management IC that sits between a low-current control PWM output and the high-capacitance gate of a switching MOSFET or GaN device, providing the current and voltage translation required to switch the device on and off quickly. Junction isolation (JI) replaces the older level-shifter + transformer bootstrap scheme with an on-die high-voltage transistor, reducing BOM, shrinking board area, and improving noise immunity. Within the broader taxonomy, the 2EDL8124GXUMA1 belongs to gate driver ICs -> MOSFET/IGBT drivers -> power management ICs -> analog and mixed-signal semiconductors. Key features include 3 A peak source current, 4 A peak sink current, integrated 120 V bootstrap diode, undervoltage lockout (UVLO) on both VCC and VBS rails, TTL-compatible logic inputs with hysteresis, and a 4 mm x 4 mm thermally-enhanced VSON package with an exposed pad that keeps junction temperature rise manageable at continuous switching operation. The wide VBS supply range of up to 120 V and the 1 ns typical delay matching between channels minimize dead-time losses in high-frequency half-bridges. The architecture combines a low-side driver powered directly from VCC (typical 10 V to 17 V) with a high-side driver powered by a bootstrap capacitor refreshed through the on-chip bootstrap diode during the low-side on-time. The junction-isolation barrier carries the high-side logic-level signal from input to high-side gate, with propagation delay matched within 1 ns between rising and falling edges to control dead-time accurately. Typical applications include telecom and datacom intermediate bus converters, 48 V to point-of-load buck stages, industrial motor-driver half-bridges, solar micro-inverter power stages, and high-density server VRM blocks. In all of these the part delivers the rapid, matched-edge switching that high-efficiency synchronous rectification requires. When designing with the 2EDL8124GXUMA1, place the bootstrap capacitor (typically 100 nF X7R) close to the VBS pin and the VCC decoupling capacitor close to the VCC pin, and route the high-side gate return (HS_GND / SW node) to minimize parasitic inductance. The exposed pad must be soldered to a sufficient copper pour to keep junction temperature within the 150 C absolute maximum. This page synthesizes Infineon distributor pricing from DigiKey/Mouser/Octopart, drop-in alternatives in the same PG-VDSON-8-4 footprint, and practical design notes that complement - not just repeat - the manufacturer datasheet.
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
The Infineon 2EDL900G3XTMA1 is a 120 V junction-isolated dual-channel level-shift gate driver IC with 4 A source / 6 A sink drive strength, integrated current sense amplifier, and configurable deadtime/mode logic, housed in a 16-pin TSNP (3x3 mm) package. It targets high-side, low-side, and half-bridge configurations driving silicon MOSFETs or enhancement-mode GaN transistors in switching power topologies. What is a gate driver? A gate driver is a power-management IC that sits between a low-power control signal (such as a microcontroller PWM output) and a power semiconductor switch (MOSFET, IGBT, or GaN FET). It provides the high peak currents and voltage levels needed to charge and discharge the gate of the power device quickly, while providing level shifting, isolation, and protection features. Gate drivers sit within the broader power-management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor, and are essential building blocks of any switched-mode power supply (SMPS), motor drive, or Class-D audio amplifier. Key features of the 2EDL900G3 include 4 V to 16 V gate-drive output, a configurable deadtime or turn-on delay block to prevent shoot-through, and an integrated current-sense amplifier that eliminates an external op-amp in many current-mode control loops. The driver supports multiple PWM modes including tri-state single PWM, HSCC HS, HSCC LS, Hi/Li, and Hi/Li inverted, making it adaptable to nearly any digital controller interface. The 120 V junction-isolation rating supports bus voltages typically up to 80 V depending on derating. The architecture combines a level-shift high-side channel with a low-side channel on a single die, using Infineon's junction-isolation (JI) process instead of thicker galvanic isolation. This yields a compact 3x3 mm TSNP footprint with strong 4 A source / 6 A sink drive capable of switching GaN FETs in under 10 ns. The integrated current-sense amplifier provides a differential output proportional to the switched current, simplifying peak-current-mode control. Typical applications include 48 V telecom and server point-of-load converters, industrial SMPS, eMobility auxiliary power, Class-D audio amplifiers, and synchronous rectifier drivers. The GaN-compatible drive voltage range makes it a strong choice for new high-frequency designs. When designing with this part, verify that the 4 V minimum output drive suits your FET's gate-threshold requirement; some logic-level GaN FETs need only 3.3 V drive. The exposed pad (EP) must be soldered to a sufficiently large copper island for thermal relief, as the 4 A peak currents create brief but high dissipation events during switching. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet and reference designs - information not aggregated on the manufacturer product page alone.
2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon
The Infineon 2EDN7434RXTMA1 is a 4 A dual-channel low-side EiceDRIVER gate driver IC housed in a PG-TSSOP-8 package (3 mm body width), designed to drive N-channel and P-channel MOSFETs as well as wide-bandgap (WBG) devices such as GaN and SiC transistors. Each of the two output channels can source and sink up to 5 A peak current with low output resistance, enabling fast switching transitions that minimize switching losses in high-frequency power-conversion stages. The non-inverting logic inputs accept LV-TTL compatible signals and tolerate absolute input voltages from -12 V to +22 V, simplifying interface to microcontrollers and digital controllers. A low-side gate driver is a specialized power-management IC that sits between a low-power control signal (from a microcontroller, DSP, or PWM controller) and the gate of a low-side power switch. Within the broader semiconductor taxonomy, gate drivers belong to the power management IC category, sitting alongside voltage regulators, supervisors, and motor drivers. They serve as a critical buffer that translates low-current logic signals into the high peak currents needed to rapidly charge and discharge the large input capacitance of power MOSFETs, IGBTs, and WBG transistors. Without a dedicated gate driver, switching speeds would be limited by the controller's weak output stage, leading to excessive heat dissipation and poor efficiency. The 2EDN7434RXTMA1 features tight timing specifications with typical propagation delays of 19 ns, matched channel-to-channel delays for balanced switching, and integrated active output voltage clamping to protect downstream devices from over-voltage spikes. Independent dual outputs allow flexible half-bridge, synchronous-rectifier, and dual-MOSFET topologies, while the small PG-TSSOP-8 footprint (3.0 x 3.0 mm) saves board area in compact designs. The device operates from a wide supply range and is characterized for industrial temperature grades, suiting it for high-density power designs. Typical applications include switch-mode power supplies (SMPS), DC-DC converter power stages, synchronous rectifier drivers, motor-control half-bridges, and Class-D audio amplifiers. The driver is also well-suited for driving GaN and SiC transistors where fast edge rates are critical to minimizing switching loss. Its high peak current capability and matched channels also make it appropriate for digital-point-of-load (POL) converters and telecom infrastructure. When designing with this driver, place the bootstrap supply capacitor (if used) and bypass capacitors as close as possible to the device pins to minimize parasitic inductance. The low output resistance helps contain EMI by producing controlled dV/dt edges; however, careful PCB layout is still required to avoid unwanted ringing on the gate traces. This page consolidates pricing, drop-in alternatives, and application guidance drawn from the manufacturer datasheet and distributor data, offering a practical reference not duplicated on standard distributor listings.
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
The Infineon 2EDN7524GXTMA1 is a fast dual-channel 5 A low-side gate driver IC housed in an 8-pin PG-WSON-8-1 package, optimized for driving standard MOSFETs, superjunction MOSFETs, and GaN power switching devices. According to the Infineon datasheet, the part delivers 5 A source/sink drive current with rail-to-rail outputs, 1 ns delay matching between channels, and TTL/3.3 V CMOS-compatible inputs that tolerate -10 V to +20 V on the control pins. Its input-voltage robustness against latch-up and electrical overstress induced by parasitic ground inductance makes it well suited to high-frequency switching topologies. A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or DSP) and a high-power discrete switch (MOSFET, IGBT, or GaN HEMT). It provides level shifting, high peak-current drive, and isolation of the controller from the switching transients on the power stage. Within the system hierarchy, the 2EDN7524G belongs to the gate-driver family, which sits below the system MCU and above the power-switching devices in DC-DC converters, motor drives, and Class-D audio amplifiers. Key differentiating specifications include 5 A peak source/sink drive current (sufficient for sub-100 ns switching of large MOSFETs), 1 ns channel-to-channel delay matching (critical for synchronous-rectifier timing), a wide -10 V to +20 V input voltage tolerance on the logic pins, and a propagation delay of around 20 ns. The PG-WSON-8-1 package with an exposed pad provides low thermal resistance and a compact 3 mm x 3 mm footprint for high-density power designs. The device uses a non-inverting logic topology and provides separate source/sink output stages that can be paralleled for higher drive current. Internal Under-Voltage Lockout (UVLO) protects the power stage by holding the outputs low until the supply rail is stable. The 5 A drive strength enables fast turn-on/turn-off transitions, reducing switching losses in high-frequency applications. Typical applications include synchronous-rectifier drive in DC-DC buck/boost converters, half-bridge and full-bridge converters, Class-D audio amplifiers, motor-drive power stages, and GaN-based point-of-load converters. Its 1 ns delay matching makes it particularly valuable in synchronous-rectifier and half-bridge topologies where timing skew directly converts to shoot-through losses. When designing with this part, place bypass capacitors as close as possible to VCC and GND. Use a 4-layer PCB layout with a continuous ground plane under the exposed thermal pad to manage switching transients. Always verify that the gate-drive voltage level matches the requirements of the driven MOSFET or GaN device; for standard MOSFETs, 10 V drive is typical, while enhancement-mode GaN HEMTs often require only 5-6 V. This page synthesizes distributor pricing, drop-in alternatives drawn from the Infineon 2EDN EiceDRIVER family and competitors, and practical design notes not found in the manufacturer datasheet alone.
2EDN7533BXTSA1 - Dual 5A Low-Side Gate Driver SOT-23-6 | Infineon
The Infineon 2EDN7533BXTSA1 is a dual-channel, low-side 5 A gate driver IC in a 6-pin SOT-23 (PG-SOT23-6-1) package, engineered for driving power MOSFETs and wide-bandgap (WBG) devices such as GaN and SiC transistors. Each channel delivers ±5 A source/sink peak current, with a propagation delay of 19 ns (typical) and tight channel-to-channel matching that keeps timing skew below 1 ns, enabling high-frequency switching in compact DC-DC and motor-drive topologies. Background: A gate driver is a power-management IC that sits between a low-power control signal (PWM from a microcontroller or controller IC) and the high-current gate of a power semiconductor switch. Low-side drivers specifically reference the source/emitter of the switch to ground and pull the gate up/down to VDD/0V. Within the broader taxonomy, gate drivers belong to: gate driver IC -> power management IC -> power semiconductor driver -> signal chain/power interface. Gate drivers are essential whenever the controller cannot source/sink enough current to switch the power device quickly, which is nearly always true for modern WBG devices with sub-nC gate charge requirements at MHz speeds. Key features include a wide 4.5 V to 20 V supply range, integrated active output voltage clamping for MOSFET gate protection, under-voltage lockout (UVLO) for safe start-up, and LV-TTL compatible inputs that tolerate -12 V to +22 V absolute maximum. The inverting logic variant (suffix -33) flips the polarity of each channel, useful in half-bridge or synchronous-rectifier control where the controller outputs an active-low PWM. The SOT-23-6 footprint occupies only 2.9x1.6 mm, enabling extremely compact power stages. Architecturally, the device uses a matched-pair output stage design with tightly-trimmed timing, ensuring that propagation delays are consistent across temperature and process. The integrated bootstrap-style clamping protects against dv/dt-induced gate over-voltage when driving WBG devices - a critical feature for GaN HEMTs that typically have ±7 V gate ratings. Typical applications include synchronous buck/flyback DC-DC converters, half-bridge and full-bridge motor drivers, class-D audio amplifiers, and high-frequency GaN/SiC switching converters. The inverting variant is particularly suited to controllers that natively drive the low-side FET with a low-true PWM, eliminating an external logic inverter. When designing with this part, place input/output bypass capacitors (typically 100 nF ceramic) within 2 mm of the VDD and GND pins. Maintain a 4-layer or 2-layer PCB with a low-impedance ground return under the driver to handle the 5 A peak di/dt without inductive ringing. Derate peak current for continuous operation above 100 kHz. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and application-specific design notes not found in the standalone manufacturer datasheet, providing a single engineering reference for sourcing and substitution decisions.