2EDL8024GXUMA1 - 120V Boot, 3A/4A Half-Bridge Gate Driver | Infineon
Teilenummer: 2EDL8024GXUMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.66 | $16,60 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.98 | $980,00 |
| 3.000 | $0.82 | $2.460,00 |
2EDL8024GXUMA1 Übersicht
A gate driver IC is a power-management building block that sits between a low-power controller (PWM, MCU, or DSP) and the high-current gate of a power MOSFET, IGBT, or GaN switch. Gate drivers belong to the broader hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. By providing high peak gate current and level shifting to the high-side floating supply, drivers overcome the limited drive strength of controllers and enable fast, clean switching transitions that minimize switching loss and EMI.
The 2EDL8024GXUMA1 sources up to 3 A and sinks up to 4 A of peak gate current, allowing rapid charging and discharging of large MOSFET gate capacitances at switching frequencies above 500 kHz. Integrated undervoltage lockout (UVLO) on both VCC and the bootstrap supply protects the power stage from partial-turn-on events. The 120 V bootstrap voltage rating covers 80 V-100 V MOSFET bus rails with substantial margin for transients and ringing.
Internally, the device uses a junction-isolated high-side level shifter that tolerates high dV/dt common-mode transients common in hard-switched half-bridges. The proprietary level-shift architecture delivers typical propagation delay of about 40 ns with channel-to-channel matching of ±2 ns, minimizing dead-time imbalance that would otherwise increase body-diode conduction losses or risk cross-conduction shoot-through.
Typical applications include high-frequency DC-DC buck and half-bridge converters, server and telecom point-of-load power, industrial SMPS, motor-drive half-bridges for low-voltage brushless DC fans and pumps, and class-D audio output stages. In each case the driver is placed between the PWM controller and the MOSFET/IGBT gates with a local bootstrap capacitor and a small gate-series resistor to control ringing.
When designing with the 2EDL8024GXUMA1, place the bootstrap capacitor as close as possible to the BST and HS pins and use a 1 ohm to 10 ohm gate resistor to dampen parasitic ringing. Ensure the VCC decoupling (typically 1 uF to 10 uF) is placed within 2 mm of the VCC pin to keep the floating supply rail clean under high di/dt load steps.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für 2EDL8024GXUMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit 2EDL8024GXUMA1 (gleiche Bauform und Footprint) – abweichend in Package, RoHS Status, Bootstrap Diode, Operating Temperature, Input Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
2EDL8024G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
2EDL8024GXUMA1 Grenzwerte & elektrische Eigenschaften
| Product Type | Half-Bridge Gate Driver IC |
| Configuration | High-Side and Low-Side, Non-Inverting |
| Number of Drivers | 2 |
| Peak Source Current | 3 A |
| Peak Sink Current | 4 A |
| Bootstrap Voltage (Max) | 120 V |
| Propagation Delay (Typ) | 40 ns |
| Delay Matching | +/-2 ns (typical) |
| Input Logic | Non-Inverting, TTL/CMOS compatible |
| Bootstrap Diode | Integrated |
| UVLO Protection | Yes (VCC and bootstrap) |
| Isolation Type | Junction-isolated level shifter |
| Betriebstemperatur | -40 C to +125 C |
| Gehäuse | PG-VDSON-8-4 |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
2EDL8024GXUMA1 Pin-Konfiguration
| Pin 1 | HIN — High-side non-inverting input |
| Pin 2 | LIN — Low-side non-inverting input |
| Pin 3 | VCC — Low-side supply voltage |
| Pin 4 | COM — Low-side return / ground |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | HS — High-side source / switch node |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | BST — Bootstrap supply for high-side driver |
Typische Anwendungen
2EDL8024GXUMA1 ist geeignet für 7 Anwendungs: High-Frequency DC-DC Half-Bridge Converter, Server and Telecom Point-of-Load Power, Industrial SMPS Half-Bridge Stage, Brushless DC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, Solar Microinverter DC-DC Stage, EV Auxiliary Power Half-Bridge.
High-Frequency DC-DC Half-Bridge Converter
The 2EDL8024GXUMA1 is ideal for high-frequency synchronous buck and half-bridge DC-DC converters. Its 3 A source / 4 A sink peak gate current drives large low-VDS(on) MOSFETs at switching frequencies up to 1 MHz, while the +/-2 ns delay matching keeps dead-time balanced to minimize body-diode conduction. Place the driver between the PWM controller (such as a digital controller or analog UCC28950-type) and the power MOSFETs, with a 100 nF bootstrap capacitor close to the BST pin. This topology is common in 48 V telecom intermediate bus converters and high-density server VRM designs.
Empfohlen
Server and Telecom Point-of-Load Power
In server and telecom 48 V-to-POL intermediate bus architectures, the 2EDL8024GXUMA1 drives the primary-side MOSFETs of isolated or non-isolated LLC and hard-switched half-bridge converters. The 120 V bootstrap rating suits 48 V nominal rails with substantial transient margin. Junction-isolated level shifting tolerates the high dV/dt of primary-side switching. The 4 A sink current accelerates turn-off, reducing switching losses that directly impact 80 PLUS efficiency targets. Pair with a digital controller like the Infineon XMC or TI UCD3138 for full POL solution.
Empfohlen
Industrial SMPS Half-Bridge Stage
The 2EDL8024GXUMA1 fits industrial switch-mode power supplies that use a low-voltage half-bridge front-end or DC-DC bus converter stage. Its -40 C to +125 C operating range suits industrial environments, and the integrated UVLO on both VCC and bootstrap prevents partial turn-on during supply rail transients. In a 24 V or 48 V industrial bus converter, the driver provides clean gate signals to the half-bridge MOSFETs. Use a 1 ohm to 10 ohm gate resistor to dampen parasitic ringing in noisy industrial environments.
Empfohlen
Brushless DC Motor Drive Half-Bridge
The 2EDL8024GXUMA1 drives one half-bridge leg of a three-phase brushless DC (BLDC) motor drive in low-voltage battery-powered applications such as e-bikes, power tools, and small appliances. Each driver IC handles one phase leg with high-side and low-side MOSFETs, and three drivers can be combined for full three-phase control. The 3 A/4 A peak current suits small to medium power MOSFETs in the 40 V-100 V range. The non-inverting TTL inputs interface directly with 3.3 V or 5 V microcontrollers.
Empfohlen
Class-D Audio Amplifier Output Stage
In class-D audio amplifier output stages, the 2EDL8024GXUMA1 provides the gate drive for the half-bridge output MOSFETs. Its +/-2 ns delay matching preserves the dead-time balance critical for low audio distortion, while the 3 A/4 A peak drive current supports fast switching transitions that minimize dead-time-related distortion. The integrated bootstrap diode simplifies the high-side supply. A 4-ohm speaker load at 50 W typically uses 40 V or 60 V MOSFETs well within the driver's 120 V bootstrap rating.
Empfohlen
Solar Microinverter DC-DC Stage
The 2EDL8024GXUMA1 drives the low-voltage half-bridge stage of a solar microinverter or DC optimizer module. The 120 V bootstrap rating covers 40 V-80 V PV panel open-circuit voltages with margin. The driver's tight delay matching reduces dead-time losses that would otherwise reduce conversion efficiency. Junction isolation provides robust common-mode transient immunity for outdoor installations with high dV/dt from grid-tie switching. Pair with a perturb-and-observe MPPT controller for maximum power point tracking.
Empfohlen
EV Auxiliary Power Half-Bridge
In electric vehicle auxiliary power converters (12 V-48 V battery to low-voltage rails), the 2EDL8024GXUMA1 drives the primary-side MOSFETs of an isolated or non-isolated half-bridge DC-DC. Its automotive-grade wide operating temperature range and integrated UVLO suit under-hood environments. The high 4 A sink current is particularly valuable at low temperatures where MOSFET gate charge increases. For full automotive qualification (AEC-Q100), check Infineon's automotive-grade variant or alternative qualified parts.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 2EDL8024GXUMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 2EDL8024G | 2ED21834S06JXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VDSON-8-4 | PG-VDSON-8-4 | DSO-8 (different) | DSO-8 (different) |
| Peak Source Current | 3 A | 3 A | 2.5 A | 2.5 A |
| Peak Sink Current | 4 A | 4 A | 2.5 A | 2.5 A |
| Bootstrap Voltage (Max) | 120 V | 120 V | 600 V | 600 V |
| Delay Matching | +/-2 ns | +/-2 ns | +/-20 ns | +/-20 ns |
| Bootstrap Diode | Integrated | Integrated | External required | External required |
| Pin-to-Pin Compatible | Reference | Yes - same die/package | No - different package | No - different package |
Wichtigste Unterscheidungsmerkmale
- Highest sink current in the 120V class half-bridge family (vs. 2ED21834S06JXUMA1)
- Integrated 120V bootstrap diode eliminates external component (vs. 2ED2183S06FXUMA1)
- Tight delay matching for precise dead-time control (vs. 2ED21834S06JXUMA1)
Designhinweise
Place the bootstrap capacitor (typically 100 nF to 1 uF X7R ceramic) as close as possible to the BST and HS pins, with traces shorter than 5 mm. The bootstrap capacitor supplies peak gate charge to the high-side MOSFET and any series inductance from long traces causes voltage droop and poor high-side drive. VCC decoupling (1 uF to 10 uF) should also be within 2 mm of the VCC pin.
Do not exceed the 120 V bootstrap voltage rating. In half-bridge topologies the HS pin swings to the bus voltage plus inductive ringing; choose MOSFETs with sufficient voltage margin or add a snubber. The driver inputs are non-inverting and TTL-compatible - ensure the controller logic levels match (3.3 V or 5 V). Below the UVLO threshold the outputs are forced low, preventing partial turn-on during power-up.
Use a 4-layer PCB with a continuous ground plane directly under the driver to minimize parasitic inductance in the gate drive loop. Keep the gate-drive loop (driver output -> gate -> source -> COM return) as small as physically possible. A small ferrite bead or 1 ohm to 10 ohm gate resistor in series with each gate helps dampen parasitic ringing from gate-source capacitance and PCB trace inductance.
The PG-VDSON-8-4 package has a thermal pad that must be soldered to a PCB copper pour (at least 50 mm^2) for adequate heat dissipation. At full 3 A source / 4 A sink current and 1 MHz switching, gate-drive losses can reach 200-400 mW depending on total gate charge. For continuous high-frequency operation, ensure the PCB thermal design keeps junction temperature below 125 C.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - check Infineon automotive-grade variant for vehicle applications. Halogen-free status not stated in available data.
