RF-MOSFETs

MRF6S19140HR3

MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors

The NXP Semiconductors MRF6S19140HR3 (originally developed by Freescale Semiconductor) is a 28V, 29W RF power lateral N-channel MOSFET designed for 1930-1990 MHz base-station applications. Housed in the NI-880H-2L ceramic package (CASE 465B-03), this LDMOS device delivers 16dB gain at 1.93-1.99GHz with a tested drain current of 1.15A, targeting PCN (Personal Communications Network) and PCS (Personal Communications Service) base-station infrastructure and Class-AB driver/final stages. The device is rated to 68V maximum and supports both TDMA, CDMA and multi-carrier amplifier topologies, with the 28V drain bias allowing direct compatibility with standard cellular base-station power supplies. The H suffix in the MPN indicates high-performance process screening, while the R3 tape-and-reel footprint supports automated SMT assembly for volume manufacturing. An RF power LDMOS transistor is a lateral double-diffused MOSFET optimized for high-frequency, high-power amplification. It belongs to the power MOSFET family within RF & wireless discretes, sitting below LDMOS but above general-purpose switching MOSFETs in the taxonomy. LDMOS parts dominate cellular base-station PAs (power amplifiers) because they combine high RF gain, high breakdown voltage and excellent thermal conductivity from the silicon die to the ceramic flanged package. Key features include a tested gain of 16dB at 1.93-1.99GHz, integrated ESD protection, inherent ruggedness for high VSWR loads, and gold-plated leads for long-term reliability in outdoor cabinet environments. The rated pulsed output capability (29W average) is delivered from a 28V rail, simplifying bias generation. The NI-880H-2L package provides a stud-mount ceramic body with bolt-down thermal path, achieving low thermal resistance to an external heatsink for continuous CW operation at full rated power. Architecturally, the device uses NXP's high-voltage sixth-generation (HV6) LDMOS process, which optimizes the drain-source drift region to maximize RF efficiency at cellular bands. The lateral geometry minimizes parasitic capacitances, supporting the 1.93-1.99GHz target band while keeping the die area small enough to fit the NI-880 ceramic housing. Internally matched input and partially matched output networks reduce external BOM count in the final amplifier stage. Typical applications include PCS/PCN base-station power amplifiers, micro-cell and picocell infrastructure, WLL (Wireless Local Loop) front-ends, and multi-carrier drivers. The 28V bias and 29W output power make it well-suited for the final stage of high-linearity Class-AB macrocell transmitters targeting the 1.9GHz US PCS band. When designing with this part, ensure the source leads are solidly grounded with multiple vias to the thermal PCB. A high-Q output matching network is required at the application board level because output impedance depends on load-pull characterization for the user's exact frequency and bias point. This page synthesizes distributor pricing for NI-880H-2L LDMOS PAs, drop-in ceramic-package alternatives, and engineering notes not consolidated on any single manufacturer page.