10M16SAU169C8G vs 10M08SAU169C8G Vergleich

Detaillierter Direktvergleich von 10M16SAU169C8G von Intel und 10M08SAU169C8G von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 10M16SAU169C8G 10M08SAU169C8G
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $21,40 $10,20
Family MAX 10 MAX 10
Logic Elements (LE) 16,000 —
Embedded Memory 549 Kb (M9K blocks) —
Embedded Multipliers (18x18) 45 —
User I/O Count 130 —
PLLs 4 4 analog PLLs + 2 fractional PLLs
Gehäuse 169-UBGA (11x11 mm, 0.8 mm pitch) 169-LFBGA (UBGA, 11x11 mm, 0.8 mm pitch)
Process Technology TSMC 55 nm embedded NOR flash —
Configuration Internal dual-configuration flash (non-volatile) —
Integrated ADC 12-bit SAR, up to 17 analog inputs —
Betriebstemperatur 0C to +85C (commercial) Commercial / Industrial (per device suffix)
Speed Grade C8 C8 (-8)
Supply Voltage (VCCINT) 1.2 V (core) —
Montageart Surface Mount (BGA) —
RoHS-Status Compliant Compliant
Logic Elements (LEs) — 8,000
Embedded Memory (bits) — 387,072 (≈378 Kbits user flash + M9K block RAM)
User I/Os — 130
Logic Array Blocks (LABs) — [DATA_NEEDED: LAB count]
M9K Block RAM (Kbits) — 173 (≈378 Kbits total embedded memory including user flash)
DSP Blocks — Yes (18x18 multiplier blocks)
On-chip ADC — Yes (single, 12-bit, 1 MSps equivalent — device dependent)
Configuration Memory — Dual-configuration on-chip flash (non-volatile, instant-on)
Core Voltage — 1.2 V
I/O Voltage Standards — LVCMOS/LVTTL up to 3.3 V
Process Node — 55 nm embedded flash
External Memory Interface — DDR3, LPDDR2, SRAM (hard IP)
PCIe Hard IP — Yes (PCIe Gen2 x1 hard IP block)
Configuration Mode — JTAG (1149.1) + Active Serial (AS)
Development Toolchain — Intel Quartus Prime

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