1ED44175N01BXTSA1 vs 1ED020I12B2XUMA1 Vergleich

Detaillierter Direktvergleich von 1ED44175N01BXTSA1 von Infineon und 1ED020I12B2XUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1ED44175N01BXTSA1 1ED020I12B2XUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,54 $2,65
Funktion Low-side gate driver —
Number of Channels 1 1
Gate Type IGBT, MOSFET (single-channel) —
Configuration Non-inverting —
Output Current (Source/Sink) 2.6 A typical —
Supply Voltage Range Up to 25 V —
Logic Input Compatibility CMOS, LSTTL —
Over-Current Protection (OCP) Integrated (OCP pin) —
FAULT Output Yes (status reporting) —
Enable-Pin Yes —
Rise/Fall Time [DATA_NEEDED: rise/fall time ns] —
Propagation Delay [DATA_NEEDED: propagation delay ns] —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
Gehäuse PG-SOT23-6-3 (6-lead) PG-DSO-16-15 (300 mil wide-body DSO-16)
Montageart Surface Mount Surface Mount
Technology CMOS (latch-up immune) —
MSL-Level [DATA_NEEDED: MSL level] MSL-3 (per JEDEC J-STD-020)
RoHS-Status Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
Betriebstemperatur — -40 °C to +125 °C
Compliance — RoHS compliant

Datenblätter & Ressourcen

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