1EDB7275FXUMA1 vs 1EDI60N12AFXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDB7275FXUMA1 von Infineon und 1EDI60N12AFXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDB7275FXUMA1 1EDI60N12AFXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,68 $2,21
Product Type Single-channel isolated gate driver IC —
Topology Supported High-side / low-side, half-bridge (with two parts) —
Isolation Technology Coreless transformer (CT) magnetic coupling —
Isolation Voltage (Viso) 3000 Vrms —
Common-Mode Transient Immunity (CMTI) 300 V/ns (minimum) —
Peak Source Output Current 5.4 A (typical) —
Peak Sink Output Current 9.8 A (typical) —
Propagation Delay +6 / -4 ns (typical, see datasheet family) —
Supported Switch Technologies Si MOSFET, SiC MOSFET, GaN HEMT —
Gehäuse PG-DSO-8 (150 mil DSO, 8-pin) PG-DSO-8-51 (DSO-8)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: full operating temperature range] —
UVLO Protection Yes (secondary side) —
Marking Code 1B7275A —
RoHS-Status Compliant Compliant
Driver Configuration — Single high-side, galvanically isolated
Number of Channels — 1
Isolation Type — Magnetic (coreless transformer)
Isolation Voltage — 1200 V working voltage
Maximum Output Voltage — 40 V
Source Current (typ.) — 10 A
Sink Current (typ.) — 9.4 A
Supply Voltage (VDD) — 3.1 V to 17 V
Propagation Delay (typ.) — 120 ns
Input Logic Compatibility — 3.3 V and 5 V CMOS/TTL
Creepage Distance (min.) — 4 mm
Short-Circuit Clamping — Yes (separate sink/source outputs)
Betriebstemperatur — -40C to +125C
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

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