1EDB8275FXUMA1 vs 1EDB7275FXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDB8275FXUMA1 von Infineon und 1EDB7275FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDB8275FXUMA1 1EDB7275FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,72 $1,68
Funktion Single-channel isolated gate driver —
Number of Channels 1 —
Isolation Type Magnetic coupling (coreless transformer) —
Isolation Voltage (Vrms) 3000 Vrms —
Peak Source Current (typ.) 5.4 A —
Peak Sink Current (typ.) 9.8 A —
CMTI (min.) 300 V/ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] —
Output-side Supply Voltage Up to 40 V (per datasheet family) —
Input-side Supply Voltage [DATA_NEEDED: VCC input range] —
UVLO Yes (input and output side) —
Miller Clamp Available in family —
Gehäuse PG-DSO-8 (150 mil wide-body) PG-DSO-8 (150 mil DSO, 8-pin)
Betriebstemperaturbereich -40 C to +125 C (industrial) [DATA_NEEDED: full operating temperature range]
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Product Type — Single-channel isolated gate driver IC
Topology Supported — High-side / low-side, half-bridge (with two parts)
Isolation Technology — Coreless transformer (CT) magnetic coupling
Isolation Voltage (Viso) — 3000 Vrms
Common-Mode Transient Immunity (CMTI) — 300 V/ns (minimum)
Peak Source Output Current — 5.4 A (typical)
Peak Sink Output Current — 9.8 A (typical)
Propagation Delay — +6 / -4 ns (typical, see datasheet family)
Supported Switch Technologies — Si MOSFET, SiC MOSFET, GaN HEMT
UVLO Protection — Yes (secondary side)
Marking Code — 1B7275A

Datenblätter & Ressourcen

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