1EDN7136GXTMA1 vs 1EDN7126GXTMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7136GXTMA1 von Infineon und 1EDN7126GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7136GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $0,29 |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | Non-Inverting |
| Peak Source Current | 4 A | 1.5 A |
| Peak Sink Current | 8 A | 1.5 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | — |
| Propagation Delay | Sub-nanosecond class | — |
| Gehäuse | PG-VSON-10-4 (leadless, thermal pad) | PG-VSON-10-4 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 C to +125 C | — |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| Funktion | — | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Common-Mode Voltage (CMR) | — | 200 V |
| Input Type | — | Truly Differential Input (TDI) |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| Betriebstemperaturbereich | — | -40C to +125C |
| Reach | — | Compliant |
| Lead-Free | — | Yes |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |