1N5711 vs BAT46 Vergleich

Detaillierter Direktvergleich von 1N5711 von STMicroelectronics und BAT46 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1N5711 BAT46
Marke STMicroelectronics STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,18 $0,05
Diode Type Small-signal Schottky barrier (RF) diode Small signal Schottky diode
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW —
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: VF at rated current]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF [DATA_NEEDED: junction capacitance]
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Gehäuse DO-35 (DO-204AH) hermetic axial-lead glass DO-35 (axial, glass)
Montageart Through-Hole Through Hole
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
RoHS-Status Compliant RoHS3 Compliant
Reverse Voltage (VR) — 100 V
Average Forward Current (IF) — 150 mA
Reverse Leakage Current (IR) — [DATA_NEEDED: IR at rated VR]
Configuration — Single diode
Application Class — Protection and routing operations
REACH Status — Unaffected
MSL-Level — 1 (Unlimited)
Series — BAT46
Manufacturer Equivalents — STMicroelectronics, Vishay General Semiconductor

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